TiSi2 Phase Transformation by Amorphization Techniques

1996 ◽  
Vol 441 ◽  
Author(s):  
Tord Karlin ◽  
Martin Samuelsson ◽  
Stefan Nygren ◽  
Mikael östling
Keyword(s):  
Phase Transformation ◽  
High Temperature ◽  
Low Temperature ◽  
Ion Beam ◽  
High Energy ◽  
Titanium Silicide ◽  
Silicide Phase ◽  
Rapid Thermal Anneal ◽  
Ion Beam Mixing ◽  
Line Widths

AbstractULSI packing density calls for sub-micron line widths, but on n-type polysilicon this can lead to incomplete titanium silicide C49 to C54 phase transformation after a conventional two step rapid thermal anneal (RTA). This study compares three different ion beam amorphization techniques: preamorphization, ion beam mixing and silicide amorphization, aiming at a complete phase transformation for submicron silicide lines. For preamorphization, an arsenic implantation at moderate energies (35–75 keV) was used to amorphize the top layer of the polysilicon prior to the titanium deposition. Ion beam mixing used a high-energy (200 keV) arsenic implantation after the titanium deposition to create an amorphous mix of silicon and titanium. These two methods did, each by themselves, lead to an increased fraction of C54 silicide grains already during the low temperature RTA, and a complete phase transformation during the subsequent high temperature RTA. Both methods lowered the thickness difference between titanium silicide on p- and n-type silicon. Silicide amorphization with 75 keV arsenic or 100 keV antimony, applied before the second RTA, did not significantly improve the silicide phase transformation.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

Pulsed Laser And Ion Beam Surface Modification of Sintered, Alpha-Sic

1985 ◽  
Vol 51 ◽  
Author(s):  
K. L. More ◽  
R. F. Davis ◽  
B. R. Appleton ◽  
D. Lowndes ◽  
P. Smith
Keyword(s):  
Electron Microscopy ◽  
Surface Modification ◽  
Laser Annealing ◽  
Ion Beam ◽  
Pulsed Laser ◽  
High Energy ◽  
Strength Increase ◽  
Ion Beam Mixing ◽  
Krf Excimer Laser ◽  
Surface Modification Techniques

ABSTRACTPulsed laser annealing and ion beam mixing have been used as surface modification techniques to enhance the physical properties of polycrystalline α-SiC. Thin Ni overlayers (20 nm - 100 nm) were evaporated onto the SiC surface. The specimens were subsequently irradiated with pulses of a ruby or krypton fluoride (KrF) excimer laser or bombarded with high energy Xe+ or Si+ ions. Both processes are non-equilibrium methods and each has been shown to induce unique microstructural changes at the SiC surface which are not attainable by conventional thermal treatments. Under particular (and optimum) processing conditions, these changes considerably increased the mechanical properties of the SiC; following laser irradiation, the fracture strength of the SiC was increased by as much as 50%, but after ion beam mixing, no strength increase was observed.High resolution cross-section transmission electron microscopy (X-TEM), scanning electron microscopy (SEM), and Rutherford backscattering techniques were used to characterize the extent of mixing between the Ni and the SiC as a result of the surface modification.

On the Order-Disorder Phase Transformation of Anilinium Halides.

1981 ◽  
Vol 36 (9) ◽  
pp. 967-974 ◽  
Author(s):  
Gerhard Fecher ◽  
Alarich Weiss ◽  
Gernot Heger
Keyword(s):  
Crystal Structure ◽  
Phase Transformation ◽  
High Temperature ◽  
Low Temperature ◽  
Neutron Diffraction ◽  
Temperature Phase ◽  
Ordered Structure ◽  
Low Temperature Phase

Abstract The crystal structure of the low temperature phase of anilinium bromide, C6H5NH3⊕Br⊖, was studied by neutron diffraction at T = 100 K. The refinement supports an ordered structure. The structures of the low and high temperature phases are compared and the mechanism of the phase transformation is discussed.

Low‐temperature ion beam mixing of Al‐Sb

1981 ◽  
Vol 38 (4) ◽  
pp. 237-240 ◽  
Author(s):  
J. Delafond ◽  
S. T. Picraux ◽  
J. A. Knapp
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing

Low-Temperature Formation of β-Type Silicon Carbide by Ion-Beam Mixing

1985 ◽  
Vol 24 (Part 1, No. 12) ◽  
pp. 1712-1715 ◽  
Author(s):  
Tadamasa Kimura ◽  
Yuki Tatebe ◽  
Akira Kawamura ◽  
Shigemi Yugo ◽  
Yoshio Adachi
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Type Silicon
Sign in / Sign up

Export Citation Format

Share Document