Effects of Vacancy-Type Defects on Electrical-Activation of P+ Implanted into Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
M. Watanabe ◽  
T. Kitano ◽  
S. Asada ◽  
A. Uedono ◽  
T. Moriya ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Positron Annihilation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Mass Spectroscopy ◽  
Diffusion Length ◽  
Electrical Activation ◽  
Secondary Ion ◽  
Sr Method ◽  
Oxygen Complexes

AbstractThe effects of vacancy-type defects induced by ion implantation on the electricalactivation of implanted phosphorus by rapid thermal annealing (RTA) are investigated using the positron annihilation technique, secondary ion mass spectroscopy (SIMS) and the spreading resistance (SR) method. P÷ ions are implanted into bare Si wafers and into Si through Si02 films at 700 keV with doses of the order of l×1013 cm−2. After implantation, rapid thermal annealing (RTA) is performed at temperatures between 600 and 1100 °C for 20 sec. The result shows that vacancy-type defects compensate the electrical-activation of P implanted into Si and also recoiled- oxygen is affected on the electrical-activation of P. The species of main defects for compensating the electrical-activation is identified as a divacancy (V2) from the lifetime of positrons. Effects of recoiled oxygen on the electricalactivation are attributed to the formation of vacancy-oxygen complexes just below the SiO2/Si interface and a resultant decrease in the diffusion length of vacancy-type defects.

Effects of Vacancy-Type Defects on Electrical-Activation of P+ Implanted into Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
M. Watanabe ◽  
T. Kitano ◽  
S. Asada ◽  
A. Uedono ◽  
T. Moriya ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Positron Annihilation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Mass Spectroscopy ◽  
Diffusion Length ◽  
Electrical Activation ◽  
Secondary Ion ◽  
Sr Method ◽  
Oxygen Complexes

AbstractThe effects of vacancy-type defects induced by ion implantation on the electricalactivation of implanted phosphorus by rapid thermal annealing (RTA) are investigated using the positron annihilation technique, secondary ion mass spectroscopy (SIMS) and the spreading resistance (SR) method. P+ ions are implanted into bare Si wafers and into Si through SiO2 films at 700 keV with doses of the order of 1×1013 cm-2. After implantation, rapid thermal annealing (RTA) is performed at temperatures between 600 and 1100 °C for 20 sec. The result shows that vacancy-type defects compensate the electrical-activation of P implanted into Si and also recoiled- oxygen is affected on the electrical-activation of P. The species of main defects for compensating the electrical-activation is identified as a divacancy (V2) from the lifetime of positrons. Effects of recoiled oxygen on the electricalactivation are attributed to the formation of vacancy-oxygen complexes just below the SiO2/Si interface and a resultant decrease in the diffusion length of vacancy-type defects.

Long-Range Diffusion of Transition Metals in Silicon During Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
D.R. Sparks ◽  
N.S. Alvi ◽  
K. Sanders
Keyword(s):  
Transition Metal ◽  
Transition Metals ◽  
Thermal Annealing ◽  
Long Range ◽  
Rapid Thermal Annealing ◽  
Mass Spectroscopy ◽  
Detailed Comparison ◽  
Metal Diffusion ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTA detailed comparison between transition metal diffusion results in silicon during rapid thermal annealing obtained in this and other studies with the diffusivity and solubility results obtained in the literature has been made. Using secondary ion mass spectroscopy, U-shaped diffusion profiles, possibly denoting amphoteric diffusion, have been noted fo Cu, Ni, and Pd in silicon during short anneals. Applications are reviewed.

Fast Diagnosis and Failure Mechanism of Phosphorous Contamination in Arsenic-Implanted Silicon

2011 ◽  
Author(s):  
Lei Zhu ◽  
H. W. Teo ◽  
K. Ong ◽  
Y.H. Huang ◽  
R. Koh ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Mass Spectroscopy ◽  
Surface Density ◽  
Time Of Flight ◽  
Cross Contamination ◽  
Tof Sims ◽  
Secondary Ion

Abstract A particular failure analysis case where phosphorous contamination occurred in arsenic-implanted Si is presented. Time-of-Flight secondary ion mass spectroscopy (TOF-SIMS) can be used for fast diagnosis of this contamination which shows 300% surface density change relative to the baseline. It is found that the cause of the phosphorous contamination is due to a combination of implanter chamber re-deposit cross contamination and rapid thermal annealing (RTA) process induced drive-in effect.

Modification of AmBv Semiconductor Layers by Ion Implantation

1993 ◽  
Vol 300 ◽  
Author(s):  
W. Wesch
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Region ◽  
Optical Transmission ◽  
Electrical Activation ◽  
Different Temperatures ◽  
Transmission And Reflection

ABSTRACTThe damage production in GaAs, InAs, GaP and InP implanted with different mass ions in the temperature region 80K to 450K has been investigated by means of the RBS/channeling technique at 300K and 100K as well as by optical transmission and reflection measurements. The influence of the implantation parameters on the damage production as well as the differences observed for the various materials are discussed. Further, results concerning the electrical activation after rapid thermal annealing of GaAs and InP implanted at different temperatures are presented.

Lattice-Matched Gaas/Ca0.45Sr0.55F2/Ge(100) Heterostrucuures Grown By Molecular Beam Epitaxy

1987 ◽  
Vol 91 ◽  
Author(s):  
C. W. Tu ◽  
J. C. Beggy ◽  
F. A. Baiocchi ◽  
S. M. Abys ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Mass Spectroscopy ◽  
Molecular Beam ◽  
Random Yield ◽  
Gaas Film ◽  
Effective Barrier ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTEpitaxial, lattice-matched GaAs/Ca0.45Sr0.55/F2 heterostructures were grown on Ge(100) substrates by molecular beam epitaxy. The films were analyzed by Rutherford backscattering and secondary ion mass spectroscopy to determine crystallinity and Ge outdiffusion. The Xmin (channeling over random yield) of a 1.5 μm-thick GaAs film grown on the fluoride is 0.075, indicating reasonably good epitaxy. After rapid thermal annealing, the crystallinity of higher-Xmin films improves, and Ge diffuses only 200 A into the fluoride, indicating that a thin fluoride layer is an effective barrier to Ge outdiffusion.

Properties of the TiSi2/p+nstructures formed by ion implantation through silicide and rapid thermal annealing

1992 ◽  
Vol 72 (1) ◽  
pp. 73-77 ◽  
Author(s):  
H. B. Erzgräber ◽  
P. Zaumseil ◽  
E. Bugiel ◽  
R. Sorge ◽  
K. Tittelbach‐Helmrich ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

scholarly journals TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing

2017 ◽  
Vol 05 (01) ◽  
pp. 15-25
Author(s):  
Junji Yamanaka ◽  
Shigenori Inoue ◽  
Keisuke Arimoto ◽  
Kiyokazu Nakagawa ◽  
Kentarou Sawano ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Rapid Thermal Anneaung of Arsenic-Phosphorus(N+-N-) Double-Diffused Shallow Junctions

1985 ◽  
Vol 52 ◽  
Author(s):  
D. L. Kwong ◽  
N. S. Alvi ◽  
Y. H. Ku ◽  
A. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Experimental Results ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Shallow Junctions

ABSTRACTDouble-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.

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