Long-Range Diffusion of Transition Metals in Silicon During Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
D.R. Sparks ◽  
N.S. Alvi ◽  
K. Sanders
Keyword(s):  
Transition Metal ◽  
Transition Metals ◽  
Thermal Annealing ◽  
Long Range ◽  
Rapid Thermal Annealing ◽  
Mass Spectroscopy ◽  
Detailed Comparison ◽  
Metal Diffusion ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTA detailed comparison between transition metal diffusion results in silicon during rapid thermal annealing obtained in this and other studies with the diffusivity and solubility results obtained in the literature has been made. Using secondary ion mass spectroscopy, U-shaped diffusion profiles, possibly denoting amphoteric diffusion, have been noted fo Cu, Ni, and Pd in silicon during short anneals. Applications are reviewed.

Effects of Vacancy-Type Defects on Electrical-Activation of P+ Implanted into Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
M. Watanabe ◽  
T. Kitano ◽  
S. Asada ◽  
A. Uedono ◽  
T. Moriya ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Positron Annihilation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Mass Spectroscopy ◽  
Diffusion Length ◽  
Electrical Activation ◽  
Secondary Ion ◽  
Sr Method ◽  
Oxygen Complexes

AbstractThe effects of vacancy-type defects induced by ion implantation on the electricalactivation of implanted phosphorus by rapid thermal annealing (RTA) are investigated using the positron annihilation technique, secondary ion mass spectroscopy (SIMS) and the spreading resistance (SR) method. P÷ ions are implanted into bare Si wafers and into Si through Si02 films at 700 keV with doses of the order of l×1013 cm−2. After implantation, rapid thermal annealing (RTA) is performed at temperatures between 600 and 1100 °C for 20 sec. The result shows that vacancy-type defects compensate the electrical-activation of P implanted into Si and also recoiled- oxygen is affected on the electrical-activation of P. The species of main defects for compensating the electrical-activation is identified as a divacancy (V2) from the lifetime of positrons. Effects of recoiled oxygen on the electricalactivation are attributed to the formation of vacancy-oxygen complexes just below the SiO2/Si interface and a resultant decrease in the diffusion length of vacancy-type defects.

Fast Diagnosis and Failure Mechanism of Phosphorous Contamination in Arsenic-Implanted Silicon

2011 ◽  
Author(s):  
Lei Zhu ◽  
H. W. Teo ◽  
K. Ong ◽  
Y.H. Huang ◽  
R. Koh ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Mass Spectroscopy ◽  
Surface Density ◽  
Time Of Flight ◽  
Cross Contamination ◽  
Tof Sims ◽  
Secondary Ion

Abstract A particular failure analysis case where phosphorous contamination occurred in arsenic-implanted Si is presented. Time-of-Flight secondary ion mass spectroscopy (TOF-SIMS) can be used for fast diagnosis of this contamination which shows 300% surface density change relative to the baseline. It is found that the cause of the phosphorous contamination is due to a combination of implanter chamber re-deposit cross contamination and rapid thermal annealing (RTA) process induced drive-in effect.

Effects of Vacancy-Type Defects on Electrical-Activation of P+ Implanted into Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
M. Watanabe ◽  
T. Kitano ◽  
S. Asada ◽  
A. Uedono ◽  
T. Moriya ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Positron Annihilation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Mass Spectroscopy ◽  
Diffusion Length ◽  
Electrical Activation ◽  
Secondary Ion ◽  
Sr Method ◽  
Oxygen Complexes

AbstractThe effects of vacancy-type defects induced by ion implantation on the electricalactivation of implanted phosphorus by rapid thermal annealing (RTA) are investigated using the positron annihilation technique, secondary ion mass spectroscopy (SIMS) and the spreading resistance (SR) method. P+ ions are implanted into bare Si wafers and into Si through SiO2 films at 700 keV with doses of the order of 1×1013 cm-2. After implantation, rapid thermal annealing (RTA) is performed at temperatures between 600 and 1100 °C for 20 sec. The result shows that vacancy-type defects compensate the electrical-activation of P implanted into Si and also recoiled- oxygen is affected on the electrical-activation of P. The species of main defects for compensating the electrical-activation is identified as a divacancy (V2) from the lifetime of positrons. Effects of recoiled oxygen on the electricalactivation are attributed to the formation of vacancy-oxygen complexes just below the SiO2/Si interface and a resultant decrease in the diffusion length of vacancy-type defects.

Lattice-Matched Gaas/Ca0.45Sr0.55F2/Ge(100) Heterostrucuures Grown By Molecular Beam Epitaxy

1987 ◽  
Vol 91 ◽  
Author(s):  
C. W. Tu ◽  
J. C. Beggy ◽  
F. A. Baiocchi ◽  
S. M. Abys ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Mass Spectroscopy ◽  
Molecular Beam ◽  
Random Yield ◽  
Gaas Film ◽  
Effective Barrier ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTEpitaxial, lattice-matched GaAs/Ca0.45Sr0.55/F2 heterostructures were grown on Ge(100) substrates by molecular beam epitaxy. The films were analyzed by Rutherford backscattering and secondary ion mass spectroscopy to determine crystallinity and Ge outdiffusion. The Xmin (channeling over random yield) of a 1.5 μm-thick GaAs film grown on the fluoride is 0.075, indicating reasonably good epitaxy. After rapid thermal annealing, the crystallinity of higher-Xmin films improves, and Ge diffuses only 200 A into the fluoride, indicating that a thin fluoride layer is an effective barrier to Ge outdiffusion.

Rapid Thermal Annealing of Ion Implanted p-n Junction in Silicon

1985 ◽  
Vol 52 ◽  
Author(s):  
C. Ho ◽  
R. Kwor ◽  
C. Araujo ◽  
J. Gelpey
Keyword(s):  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dwell Time ◽  
Annealing Temperature ◽  
Current Analysis ◽  
Junction Depth ◽  
Leakage Currents ◽  
Dopant Activation ◽  
Secondary Ion

ABSTRACTThe rapid thermal annealing (RTA) of p+n and n+p diodes, fabricated by the LOCOS process, and its subsequent effects on junction leakage current, junction depth and dopant activation were investigated. The reverse bias diode leakage currents of implanted Si <100> samples (As+: 60 KeY, 5×1014 5×1015 cm−2, B+: 25 KeV, l×1014, l×1015 cm−2 and BF2+: 45 KeV, 1×1015cm−2 ) were measured as functions of annealing temperature, and dwell time. The annealing was performed using an Eaton RTA system (Nova ROA-400) at temperatures ranging from 950 °C to 1150 °C. Annealing times ranged from 0.2 sec. to 10 sec. The results from the diode leakage current analysis are correlated with those from Secondary Ion Mass Spectroscopy (SIMS) and differential Hall measurements. The reverse-biased leakage currents from the RTA-treated samples are compared with those from furnace-annealed samples.

Diffusion and Gettering of Transition Metals in 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 225-228
Author(s):  
Katsunori Danno ◽  
H. Saitoh ◽  
Akinori Seki ◽  
T. Shirai ◽  
Hiroshi Suzuki ◽  
...  
Keyword(s):  
Transition Metals ◽  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Helium Implantation ◽  
Secondary Ion

Diffusion of transition metals in 4H-SiC has been investigated by secondary ion mass spectroscopy using epilayers and substrates implanted with titanium (Ti), chromium (Cr), iron (Fe), or nickel (Ni). In the epilayers, Cr, Fe, and Ni atoms have diffused by argon (Ar) annealing at 1780°C for 30 min. In n+ substrates, the diffusivity of the metals is smaller than that in the epilayers, and only Ni has diffused by the annealing. By the Ar or helium implantation following the implantation of transition metals, diffusion of transition metals can be successfully suppressed.

Arsenic Redistribution and Outdiffusion in Implanted Czochralski-Grown P-Type Silicon During Rapid Thermal Annealing

1988 ◽  
Vol 100 ◽  
Author(s):  
G. Chaussemy ◽  
B. Canut ◽  
S. N. Kumar ◽  
D. Barbier ◽  
A. Laugier
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Coefficients ◽  
Good Description ◽  
Temperature Dependent ◽  
One Dimensional ◽  
Type Silicon ◽  
The One ◽  
P Type ◽  
Diffusion Profiles

ABSTRACTThe effects of the implantation parameters (dose and energy) on the Arsenic redistribution and outdiffusion rate in (100) p-type silicon, after 7–12 s Rapid Thermal Annealing in the 1100–1200°C temperature range have been investigated. Four doses ranging from 2×1014 to l×1016 cm−2, and As+ energies between 70 and 170 keV, have been studied. The experimental diffusion profiles obtained from the SIMS measurements, in complement with the RBS results, were modelled using the one dimensional Fick's equation with semi-infinite boundary conditions, using a concentration and temperature dependent diffusion coefficient D(C, T). The As diffusivity was classically attributed to As+V0, As+V−, and As+V − pairs with the related diffusion coefficients taken from the literature. A relatively good description of the As redistribution was obtained without introducing any transient or SPE effects.

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