Diffuse X-Ray Scattering Study of Defects Created by KeV Ion Implants In Si

1996 ◽  
Vol 439 ◽  
Author(s):  
P. J. Partyka ◽  
R. S. Averback ◽  
K. Nordlund ◽  
I. K. Robinson ◽  
D. Walko ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Irradiation Damage ◽  
Complex Nature ◽  
Computational Framework ◽  
Near Surface ◽  
X Ray ◽  
Simulation Techniques ◽  
X Ray Scattering ◽  
Surface Measurements ◽  
Ray Scattering

AbstractDiffuse x-ray scattering (DXS) and computer simulation techniques were employed to investigate the defect structure produced in Si by low keV ion and MeV electron irradiations. DXS measurements were performed for keV Ga and He implants, demonstrating the ability of the technique to provide both bulk and near-surface measurements at defect concentrations of about 1000 ppm. A rigorous analysis of these results is complicated due to the complex nature of the ion damage in Si. A computer simulation framework is developed to aid in the analysis of this data. In this technique, defects are simulated and their strain fields are calculated by simply relaxing the atoms around the defect to their equilibrium positions. The diffuse scattering is then calculated from the strain field, and the results are compared to the experimental measurements. Computer simulations are presented here only for the case of electron irradiation damage and compared to published measurements. Application of the technique to more complicated structures is planned and should pose no serious problems in the computational framework already developed.

Diffuse X-Ray Scattering Study of Defects Created by keV Ion Implants in Si

1996 ◽  
Vol 438 ◽  
Author(s):  
P. J. Partyka ◽  
R. S. Averback ◽  
K. Nordlund ◽  
I. K. Robinson ◽  
D. Walko ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Irradiation Damage ◽  
Complex Nature ◽  
Computational Framework ◽  
Near Surface ◽  
X Ray ◽  
Simulation Techniques ◽  
X Ray Scattering ◽  
Surface Measurements ◽  
Ray Scattering

AbstractDiffuse x-ray scattering (DXS) and computer simulation techniques were employed to investigate the defect structure produced in Si by low keV ion and MeV electron irradiations. DXS measurements were performed for keV Ga and He implants, demonstrating the ability of the technique to provide both bulk and near-surface measurements at defect concentrations of about 1000 ppm. A rigorous analysis of these results is complicated due to the complex nature of the ion damage in Si. A computer simulation framework is developed to aid in the analysis of this data. In this technique, defects are simulated and their strain fields are calculated by simply relaxing the atoms around the defect to their equilibrium positions. The diffuse scattering is then calculated from the strain field, and the results are compared to the experimental measurements. Computer simulations are presented here only for the case of electron irradiation damage and compared to published measurements.1 Application of the technique to more complicated structures is planned and should pose no serious problems in the computational framework already developed.

Strain Analysis in Thin La1−xCaxMnO3 Films by Grazing Incidence X-ray Scattering

1999 ◽  
Vol 602 ◽  
Author(s):  
M. Petit ◽  
L. J. Martinez-Miranda ◽  
M. Rajeswari ◽  
A. Biswas ◽  
D. J. Kang ◽  
...  
Keyword(s):  
Film Thickness ◽  
Lattice Mismatch ◽  
Compressive Strain ◽  
Strain Analysis ◽  
Grazing Incidence ◽  
Relaxation Processes ◽  
Near Surface ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

AbstractWe have performed depth profile analyses of the lattice parameters in epitaxial thin films of La1−xCaxMno3 (LCMO), where x = 0.33 or 0.3, to understand the evolution of strain relaxation processes in these materials. The analyses were done using Grazing Incidence X-ray Scattering (GIXS) on films of different thicnesses on two different substrates, (100) oriented LaAlO3 (LAO), with a lattice mismatch of ∼2% and (110) oriented NGO, with a lattice mismatch of less than 0.1%. Films grown on LAO can exhibit up to three in-plane strained lattice constants, corresponding to a slight orthorhombic distortion of the crystal, as well as near-surface and columnar lattice relaxation. As a function of film thickness, a crossover from a strained film to a mixture of strained and relaxed regions in the film occurs in the range of 700 Å. The structural evolution at this thickness coincides with a change in the resistivity curve near the metalinsulator transition. The in-plane compressive strain has a range of 0.2 – 1.5%, depending on the film thickness for filsm in the range of 400 - 1500 A.

Near-surface critical x-ray scattering fromFe3Al

1990 ◽  
Vol 64 (21) ◽  
pp. 2527-2530 ◽  
Author(s):  
L. Mailänder ◽  
H. Dosch ◽  
J. Peisl ◽  
R. L. Johnson
Keyword(s):  
Near Surface ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

scholarly journals High-pressure x-ray scattering and computer simulation studies of density-induced polyamorphism in silicon

2007 ◽  
Vol 75 (22) ◽  
Author(s):  
Dominik Daisenberger ◽  
Mark Wilson ◽  
Paul F. McMillan ◽  
Raul Quesada Cabrera ◽  
Martin C. Wilding ◽  
...  
Keyword(s):  
Computer Simulation ◽  
High Pressure ◽  
Simulation Studies ◽  
X Ray ◽  
X Ray Scattering ◽  
Computer Simulation Studies ◽  
Ray Scattering

X-RAY SCATTERING STUDIES OF CHARGE STRIPES IN La2-xSrxNiO4 (x=0.20-0.33)

2002 ◽  
Vol 16 (11n12) ◽  
pp. 1633-1640 ◽  
Author(s):  
P. D. HATTON ◽  
M. E. GHAZI ◽  
S. B. WILKINS ◽  
P. D. SPENCER ◽  
D. MANNIX ◽  
...  
Keyword(s):  
Correlation Length ◽  
Surface Region ◽  
Crystalline Lattice ◽  
X Rays ◽  
Near Surface ◽  
X Ray ◽  
X Ray Scattering ◽  
Charge Stripe ◽  
A Charge ◽  
Ray Scattering

The La 2-x Sr x NiO 4 system is isostructural with the high T C superconducting cuprate La 2-x Sr x CuO 4 and is a prototypical system for the understanding of strongly correlated electron-phonon coupling, and the resultant effects on material properties. X-ray scattering studies have been performed on La5/3Sr1/3NiO4 that demonstrate the two-dimensional nature of these charge stripes. Such studies, demonstrate the very high correlation length of the stripes (~ 2000 Å) at low temperatures. We have undertaken a series of experiments measuring the wavevector and charge stripe correlation length on a variety of crystals with the compositions La 2-x Sr x NiO 4 (x=0.20, 0.25, 0.275, 0.30 and 0.33) using ~10 keV X-rays. The results demonstrate that for x=0.275, and above, the charge stripes are highly correlated in a well-ordered crystalline lattice. Measurements of the incommensurability, ε, as a function of temperature for the series revealed that it is commensurate and temperature independent for the x=0.33 sample. For other compositions it is incommensurate and also temperature dependent. However for the x=0.20 and 0.25 crystals a much reduced correlation length was observed suggestive of a charge stripe glass. However, such experiments are sensitive to such charge ordering only in the near (top few micron) surface region. High energy X-rays however can probe the charge stripe ordering within the bulk of the single crystal by utilising the dramatic increase in penetration depth. We have used 130 keV X-rays and demonstrate that in La5/3Sr1/3NiO4 the charge stripes are far less correlated in the bulk than in the near surface region. This reduced correlation length (~300 Å), consistent with neutron scattering measurements, is indicative of a charge stripe glass, reminiscent of that observed below x=0.25, in the near surface region.

Four steps for revealing and adjusting the 3D structure of aptamers in solution by small-angle X-ray scattering and computer simulation

2019 ◽  
Vol 411 (25) ◽  
pp. 6723-6732 ◽  
Author(s):  
Felix N. Tomilin ◽  
Roman Moryachkov ◽  
Irina Shchugoreva ◽  
Vladimir N. Zabluda ◽  
Georgy Peters ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Small Angle ◽  
3D Structure ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering
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