Formation and Characteristics of CoSi2 Layers Synthesized by Mevva Implantation

1996 ◽  
Vol 439 ◽  
Author(s):  
S. P. Wong ◽  
Qicai Peng ◽  
W. Y. Cheung ◽  
W. S. Guo ◽  
J. B. Xu ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Metal Vapor ◽  
Vacuum Arc ◽  
Strong Temperature Dependence ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Hall Effect Measurements ◽  
Large Peak ◽  
P Type

AbstractIon beam synthesis of CoSi2 layers in Si by NIEVVA (Metal Vapor Vacuum Arc) implantation has been performed under various conditions. The formation and characteristics of these CoSi2 layers have been studied by XTEM, RBS, AFM, X-ray diffraction, ellipsometry, electrical and Hall effect measurements. It was found that a higher substrate temperature during implantation results in an as-implanted Co distribution closer to the surface and hence the formation of a shallower CoSi2 layer after annealing. Buried CoSi2 layers of good crystal quality and low resistivity CoSi2 can be formed by MEVVA implantation and annealing under appropriate conditions. A strong temperature dependence of the Hall coefficient showing a large peak at around 100K was observed for the CoSi2 layers formed in p-type Si substrates but not in n-type substrates. The properties and their dependence on the processing conditions, in particular, the substrate temperature during implantation, are presented and discussed.

Formation and Characteristics of CoSi2 Layers Synthesized by Mevva Implantation

1996 ◽  
Vol 438 ◽  
Author(s):  
S. P. Wong ◽  
Qicai Peng ◽  
W. Y. Cheung ◽  
W. S. Guo ◽  
J. B. Xu ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Metal Vapor ◽  
Vacuum Arc ◽  
Strong Temperature Dependence ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Hall Effect Measurements ◽  
Large Peak ◽  
P Type

AbstractIon beam synthesis of CoSi2 layers in Si by MEVVA (Metal Vapor Vacuum Arc) implantation has been performed under various conditions. The formation and characteristics of these CoSi2 layers have been studied by XTEM, RBS, AFM, X-ray diffraction, ellipsometry, electrical and Hall effect measurements. It was found that a higher substrate temperature during implantation results in an as-implanted Co distribution closer to the surface and hence the formation of a shallower CoSi2 layer after annealing. Buried CoSi2 layers of good crystal quality and low resistivity CoSi2 can be formed by MEVVA implantation and annealing under appropriate conditions. A strong temperature dependence of the Hall coefficient showing a large peak at around 100K was observed for the CoSi2 layers formed in p-type Si substrates but not in n-type substrates. The properties and their dependence on the processing conditions, in particular, the substrate temperature during implantation, are presented and discussed.

Growth of ZnS Films and Application in Heterojunction

2011 ◽  
Vol 287-290 ◽  
pp. 2140-2143 ◽  
Author(s):  
Jian Huang ◽  
Lin Jun Wang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
Wei Min Shi ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Crystalline Silicon ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Si Substrates ◽  
Current Voltage ◽  
P Type ◽  
Zns Films

ZnS films were prepared by radio-frequency (RF) magnetron sputtering method. The effects of substrate temperature and annealing treatment on the properties of ZnS films were studied. The ZnS films were characterized by X-ray diffraction (XRD), UV-visible spectrophotometer, and electrical measurements. The results showed that the higher substrate temperature and post-deposition annealing treatment was helpful in improving the crystalline quality of the films, and the film had an n-type conductivity. N-type ZnS films were also deposited on p-type single-crystalline silicon (Si) substrates to fabricate ZnS/ Si heterojunction. The current-voltage (I-V) characteristic of the heterojunction was examined, which showed a rectifying behavior with turn-on voltage of about 2V.

Dopant and As4/Ga Flux Ratio Influence on the Electrical and Structural Properties of LT GaAs

1994 ◽  
Vol 340 ◽  
Author(s):  
S. P. O'Hagan ◽  
M. Missous
Keyword(s):  
Substrate Temperature ◽  
Pressure Ratio ◽  
Flux Ratio ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strong Function ◽  
X Ray ◽  
Undoped Material ◽  
Hall Effect Measurements ◽  
P Type

ABSTRACTDouble crystal x-ray diffraction and Hall effect measurements have been performed on GaAs layers grown by molecular beam epitaxy at low substrate temperature (200-250°C). The concentration of excess As incorporated in undoped material is found to be a strong function of growth temperature but not of As4/Ga beam equivalent pressure ratio at a given temperature. Doping with Si or Be at concentrations of 1019cm−3 or greater has resulted in significant reduction of excess As concentration in layers grown at 250'C. This effect is seen to diminish with reducing substrate temperature. The effect is not seen when Se is used as the doping source. Reducing As overpressure in the presence of such a high doping concentrations has led to highly electrically active n- and p-type layers grown at 250'C.

Epitaxial Ge Films on Si Substrates

1987 ◽  
Vol 91 ◽  
Author(s):  
J.S. Mccalmont ◽  
D. Robinson ◽  
K.M. Lakin ◽  
H.R. Shanks
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Film Growth ◽  
Dopant Concentration ◽  
Source Material ◽  
Cluster Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
P Type

ABSTRACTThin films of germanium have been prepared using an ultrahigh vacuum ionized-cluster beam (ICB) system. The dopant concentration of the films was varied by alloying the germanium source material with aluminum, a p-type dopant. X-ray diffraction analysis of the films has shown that an epitaxial (100) germanium film can be deposited on a (100) silicon substrate with a substrate temperature as low as 300°C. The results confirm that ICM deposition can be used to prepare epitaxial germanium films, but ionization of the clusters does not appear to affect the film growth.

Electrical Characteristics of CoSi2 Layers Formed by Mevva Implantation of Co into Si

1995 ◽  
Vol 402 ◽  
Author(s):  
Qicai Peng ◽  
S. P. WONG
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Strong Temperature Dependence ◽  
Low Resistivity

AbstractHigh dose Co implantation into Si has been performed with a metal vapor vacuum arc (MEVVA) ion source at an extraction voltage of 70 kV to doses from 8×1016 to 6×1017 ions cm−2 at substrate temperatures (Ts) in the range of 210°C to 700°C. Annealing was performed in nitrogen at various temperatures for various time intervals by either furnace annealing (FA) or rapid thermal annealing (RTA). The electrical properties of the CoSi2 layers formed were studied using resistivity and Hall effect measurements from 10 to 300K. We found that for all the samples prepared by MEVVA implantation, as long as a continuous CoSi2 layer was formed after annealing, a strong temperature dependence of the Hall coefficient was observed with a large peak at around 90 to 110K. The magnitude of the peak also varies depending on the substrate parameters and processing conditions. However, the temperature dependence of the resistivity for these CoSi2 layers follows the atthiessen's rule. We also found that it does not require high substrate temperature nor very high temperature annealing in order to form a CoSi2 layers with low resistivity by MEVVA implantation. Such low resistivity CoSi2 layers can be formed with a substrate temperature as low as 210°C after either RTA at high temperature for a few seconds or FA at a relatively low temperature of 750°C for one hour. The dependence of the electrical properties on Ts is also presented and discussed.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

scholarly journals Energy band diagram of In2O3/ Si heterojunction

2011 ◽  
Vol 8 (2) ◽  
pp. 581-587
Author(s):  
Baghdad Science Journal
Keyword(s):  
Energy Band ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
X Ray Diffraction ◽  
Flash Evaporation ◽  
Tunneling Diode ◽  
Conductivity Increase ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

Crystalline In2O3 Thin films have been prepared by flash evaporation. We have studied the crystal structure of as deposited at 303K and annealed at 523K using X-ray diffraction. The Hall Effect measurements confirmed that electrons were predominant charges in the conduction process (i.e n-type).It is found that the absorption coefficient of the prepared films decreases with increasing Ta. The d.c conductivity study showed that the conductivity increase with increasing Ta , whereas the activation energy decreases with increasing Ta. Also we study the barrier tunneling diode for In2O3/Si heterostructure grown by Flash evaporation technique. (capacitance-voltage C-V) spectroscopy measurements were performed at 303 K and at the annealing temperature 523K. The built in voltage has been determined and it depends strongly on the annealing process of the heterojunction. From all above measurements we assumed an energy band diagram for In2O3 /Si(P-type) heterojunction.

Phase Transformation and Ion Beam Induced Crystallization in SiC Layers Formed by Mevva Implantation of Carbon into Silicon

1997 ◽  
Vol 481 ◽  
Author(s):  
Dihu Chen ◽  
S. P. Wong ◽  
L. C. Ho ◽  
H. Yan ◽  
R.W.M. Kwok
Keyword(s):  
Ion Beam ◽  
Strong Dependence ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Preparation Conditions ◽  
Random Nucleation ◽  
The One ◽  
Amorphous Sic ◽  
Induced Crystallization

ABSTRACTBuried SiC layers were synthesized by carbon implantation into silicon with a metal vapor vacuum arc ion source under various implantation and annealing conditions. The infrared absorption spectra of these samples were deconvoluted into two or three gaussian components depending on the preparation conditions. One component peaked at around 700 cm-1was assigned to amorphous SiC (a-SiC). The other two components, both peaked at 795 cm-1 but with different values of full width at half maximum (FWHM), were attributed to β-SiC. The one with a larger (smaller) FWHM corresponds to β-SiC of smaller (larger) grains. With this deconvolution scheme, the fraction of various SiC phases in these samples were determined. It was found that for the as-implanted samples there are critical energies and doses at which the crystalline SiC fraction increases abruptly. This was attributed to the ion beam induced crystallization (IBIC) effect. It was also shown that the IBIC effect leads to strong dependence of the β-SiC fraction on the order of implantation for samples synthesized by double-energy implantation. Analysis of the evolution of the β-SiC fraction with annealing time indicated that the crystallization process in these SiC layers could well be described by the classical random nucleation and growth theory.

Ion Beam Synthesis of SiC/Si Heterostructures by Mevva Implantation

1996 ◽  
Vol 438 ◽  
Author(s):  
S. P. Wong ◽  
L. C. Ho ◽  
Dihu Chen ◽  
W. S. Guo ◽  
H. Yan ◽  
...  
Keyword(s):  
Ion Beam ◽  
Metal Vapor ◽  
Critical Energy ◽  
Vacuum Arc ◽  
Crystalline Fraction ◽  
Annealing Conditions ◽  
Ion Beam Synthesis ◽  
Carbon Redistribution ◽  
Amorphous Sic ◽  
First Time

AbstractIon beam synthesis of SiC/Si heterostructures was performed by MEVVA (metal vapor vacuum arc) implantation under various implantation and annealing conditions. The implanted SiC/Si heterostructures were characterized by various techniques. Carbon redistribution in overstoichiometrically implanted samples during annealing to form a stoichiometric SiC layer has been observed for the first time. The FTIR spectra were found to be composed of two components, one attributed to amorphous SiC and the other to β-SiC. It was also found that there are critical dose and critical energy at which the crystalline fraction increases abruptly. Other results on electrical and optical characterization are also presented and discussed

CRYSTAL STRUCTURE AND PROPERTIES OF CU-AL-O THIN FILMS

2002 ◽  
Vol 16 (01n02) ◽  
pp. 308-313 ◽  
Author(s):  
YUE WANG ◽  
HAO GONG ◽  
LING LIU
Keyword(s):  
Thin Films ◽  
Transparent Conducting Oxide ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Transparent Conducting ◽  
Potential Applications ◽  
Metal Organic ◽  
Hall Effect Measurements ◽  
Organic Precursors ◽  
P Type

P-type transparent conducting oxide thin films have attracted much attention due to their potential applications in novel transparent p-n junction devices. In this work, the transparent conducting Cu-Al-O thin films were prepared by the plasma enhanced chemical vapor deposition using metal organic precursors of Cu(acac) 2 and Al(acac) 3 (acac=acetylacetonate) while the substrate temperature was varied from 700 to 800°C. The x-ray diffraction and SEM results are analyzed to investigate the structure of the as-deposited and annealed films. The films contain metal copper and small grains of CuAlO 2. After annealing, metal copper turned into CuO . Hall effect measurements reveal that these films are p-type semiconductors and the film conductivity increased with the growth temperature.

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