Dielectric and Ferroelectric Properties of Pulsed Laser Deposited Strontium Barium Niobate Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
Y. Liu ◽  
C.W. Ong ◽  
C.L. Choy ◽  
P.W. Chan

AbstractThe dielectric and ferroelectric properties of pulsed laser deposited strontium barium niobate (SBN) thin films were investigated. The samples were prepared using a Q-switched Nd:YAG laser with a wavelength of 355 nm and a fluence of 8 J cm−2. The oxygen ambient pressure and substrate temperature were set at 50 mTorr and 700 °C, respectively. The measurements of x-ray diffraction show that the films have tungsten-bronze- type structure. Pt/SBN/Pt capacitor structure was made on (111) silicon wafer to perform the ferroelectric and dielectric measurements. From the observations of the P-E loops, the saturation polarization, remanent polarization and coercive field at 25°C are equal to 40.7 μC cm−2, 32.5 μC cm−2 and 3.8 kV cm−1. The shape of the P-E loop becomes slimmer at temperatures above 150 °C, indicating that a ferroelectric-to-paraelectric transition occurs. The dielectric constant and loss tangent of the films at 10 kHz were found to be equal to 240 and 0.4, respectively. The saturation and remanent polarization remain almost unchanged after 109 switching cycles, indicating that pulsed laser deposited SBN films have good fatigue endurance.

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.


2001 ◽  
Vol 688 ◽  
Author(s):  
Víctor Rodríguez-Santiago ◽  
Yelitza González ◽  
Félix E. Fernández ◽  
Carl H. Mueller ◽  
Fred W. Van Keuls ◽  
...  

AbstractStrontium barium niobate (SrxBa1−xNb2O6 - SBN) with 0.25≤x≤0.75 is a ferroelectric material of interest for diverse optoelectronic applications. Dielectric properties of bulk SBN crystals were comprehensively studied over 30 years ago for a range of compositions and at frequencies up to 30 MHz, but there is little information on properties at higher frequencies. In particular, and up to the best of our knowledge, there are no published results about SBN thin film dielectric properties at high frequencies. For the study reported here, SBN thin films with x = 0.61 were grown on MgO and LaAlO3 substrates by Pulsed Laser Deposition (PLD). Films with good crystallinity and oriented with c-axis normal to the substrate surface were obtained on both types of substrates, while films on MgO had much better texture due to better lattice matching. Interdigital electrode (IDE) capacitors and coupled microstrip phase shifters (CMPS) were fabricated with both types of samples in order to study dielectric response. Capacitance of the IDE capacitors was measured at 1 MHz as a function of temperature and bias voltage, revealing very low losses but poor capacitance tunability, particularly for samples on MgO. Response of the CMPS structures was measured at room temperature and at high frequencies, up to 21 GHz. Insertion losses were measured up to 28 GHz.


2002 ◽  
Vol 42 (1) ◽  
pp. 219-233 ◽  
Author(s):  
Félix E. Fernández ◽  
Yelitza González ◽  
Huimin Liu ◽  
Antonio Martínez ◽  
Vićtor Rodríguez ◽  
...  

1994 ◽  
Vol 65 (16) ◽  
pp. 2018-2020 ◽  
Author(s):  
S. Schwyn Thöny ◽  
K. E. Youden ◽  
J. S. Harris ◽  
L. Hesselink

2013 ◽  
Vol 591 ◽  
pp. 216-219
Author(s):  
Chong Qing Huang ◽  
X.A. Mei ◽  
M. Chen ◽  
J. Liu

Yb-doped bismuth titanate and random oriented Bi4-xYbxTi3O12 (BYbT) thin films were fabricated on Pt/Ti/SiO2/Si substrate with pulsed laser deposition method. The structures and ferroelectric properties of the BYbT films were investigated. Yb doping resulted in a marked improvement in remanent polarization (Pr) and coercive field (Ec). At an applied electric field of 120kV/cm, the Pr and (Ec) of the BYbT (x=0.8) films annealed at 650°C were 20 μC/cm2 and 85 KV/cm, respectively.


1999 ◽  
Vol 79 (11) ◽  
pp. 2869-2876 ◽  
Author(s):  
Jianguo Zhu ◽  
Sushil Kumar Singh ◽  
Pam A. Thomas ◽  
Stuart B. Palmer

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