Thermal Stability and Interaction Between SiOF and Cu Film

1996 ◽  
Vol 427 ◽  
Author(s):  
Yu-Jane Mei ◽  
Ting-Chang Chang ◽  
Jeng-Dong Sheu ◽  
Wen-Kuan Yeh ◽  
Fu-Ming Pan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Leakage Current ◽  
Flat Band ◽  
Band Shift ◽  
Shift Measurement ◽  
Annealing Conditions ◽  
Cu Film ◽  
Post Deposition ◽  
Sims Depth Profile

AbstractIn this work, we study the thermal stability and interaction between SiOF and Cu. Blanket SiOF films with various F concentration were deposited by PE-CVD. A dielectric constant as low as 3.2 was obtained. Copper were deposited on these SiOF and a series of post-deposition anneal were performed. Dielectric constant of SiOF was measured after deposition and again after anneal. AES and SIMS depth profile are utilized to determine the interdiffusion between Cu and SiOF under different annealing conditions. Breakdown voltage and dielectric constant were determined form C-V and I-V measurement using a MIS ( Cu/ SiOF/ p-Si) diode. This results of leakage current measurement and flat band shift measurement suggest that the fluorine in the SiOF film will retard the cu diffusion.

Interface Quality and Electrical Performance of Low-Temperature Metal Organic Chemical Vapor Deposition Aluminum Oxide Thin Films for Advanced CMOS Gate Dielectric Applications

2002 ◽  
Vol 745 ◽  
Author(s):  
Spyridon Skordas ◽  
Filippos Papadatos ◽  
Steven Consiglio ◽  
Eric Eisenbraun ◽  
Alain Kaloyeros
Keyword(s):  
Dielectric Constant ◽  
Leakage Current ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
Organic Chemical ◽  
Si Substrates ◽  
Annealing Conditions ◽  
Metal Organic

ABSTRACTIn this work, the electrical performance and interfacial characteristics of MOCVD-grown Al2O3 films are evaluated. Electrical characteristics (dielectric constant, leakage current) of as-deposited and annealed capacitor metal-oxide-semiconductor (MOS) stacks were determined using capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the electrical properties were dependent upon specific annealing conditions, with an anneal in O2 followed by forming gas being superior with respect to leakage current, resulting in leakage characteristics superior to those of SiO2. All annealing conditions evaluated led to an increase in dielectric constant from 6.5 to 9.0–9.8. Also, Al2O3 growth and interfacial oxide growth characteristics on oxynitride/Si and Si substrates were evaluated and compared using spectroscopic ellipsometry. A parasitic oxide layer was observed to form on silicon during the initial stages of MOCVD Al2O3 growth, while a thin oxynitride layer deposited on Si prevented the growth of interfacial oxide.

Low-Temperature PECVD SiO2 On Si And SiC

1997 ◽  
Vol 483 ◽  
Author(s):  
L. Teng ◽  
W. A. Anderson
Keyword(s):  
Dielectric Constant ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Dielectric Breakdown ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Breakdown Field ◽  
Flat Band ◽  
Mos Capacitors

AbstractThe deposition of SiO2 films by plasma-enhanced-chemical-vapor-deposition (PECVD) using tetraethylorthosilicate (TEOS) was studied. MOS capacitors were fabricated on both Si and SiC for this study. Several different sets of experiments were conducted for PECVD deposition according to different growth parameters and the results compared. For Si samples with SiO2 deposited at a substrate temperature 300°C, the C∼V curve gave a flat-band voltage of 1V and a transition slope of 112 pF/V. The dielectric constant of the deposited SiO2 film was 4.2 and the Si/SiO2 interface trap density was calculated to be 1.8×1010 cm−2. The I-V curve showed a leakage current density of l.2×10−9 A/cm2 and dielectric breakdown field strength of 9.2 MV/cm. For SiC samples, the PECVD deposition gave a uniform SiO2 film with a controllable deposition rate of 0.3nm/sec. The refractive index and dielectric constant of the as-deposited SiO2 film were 1.46 and 3.84 respectively. The I∼V curve showed a leakage current density of 2×10−9 A/cm2 and a breakdown field of 4.7 MV/cm.

Preparation and Properties of Silicon-Containing Arylacetylene Resins with Octa(maleimidophenyl)silsesquioxane

2012 ◽  
Vol 557-559 ◽  
pp. 1152-1156
Author(s):  
Yan Zhou ◽  
Fu Wei Huang ◽  
Fa Rong Huang ◽  
Lei Du
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Thermal Polymerization ◽  
Curing Process ◽  
Thermal Stabilities ◽  
Curing Reaction ◽  
Air Atmosphere ◽  
Ft Ir ◽  
Dsc Analyses

Modified silicon-containing arylacetylene resins (DMSEPE-OMPS) were prepared from poly(dimethylsilyleneethynylenephenyleneethynylene) (DMSEPE) and Octa(maleimidophenyl)- silsesquioxane (OMPS). The curing reaction of DMSEPE-OMPS resin was studied by FT-IR and DSC techniques. Thermal stability and dielectric properties of cured DMSEPE-OMPS resins were determined. FT-IR and DSC analyses indicate that thermal polymerization of DMSEPE-OMPS resin occurs in the curing process. Thermal stabilities of cured DMSEPE-OMPS resins under N2 and air atmosphere decrease gradually with the increment of OMPS components. The incorporation of OMPS can obviously reduce dielectric constant of DMSEPE-OMPS resins.

Photo-induced Large Area Growth Of Dielectrics With Excimer Lamps

2000 ◽  
Vol 617 ◽  
Author(s):  
Ian W. Boyd ◽  
Jun-Ying Zhang
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Low Temperature ◽  
Leakage Current ◽  
Sol Gel ◽  
Low Dielectric Constant ◽  
Large Area ◽  
Excimer Lamp ◽  
Low Dielectric ◽  
Current Densities

AbstractIn this paper, UV-induced large area growth of high dielectric constant (Ta2O5, TiO2and PZT) and low dielectric constant (polyimide and porous silica) thin films by photo-CVD and sol-gel processing using excimer lamps, as well as the effect of low temperature LW annealing, are discussed. Ellipsometry, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), UV spectrophotometry, atomic force microscope (AFM), capacitance-voltage (C-V) and current-voltage (I-V) measurements have been employed to characterize oxide films grown and indicate them to be high quality layers. Leakage current densities as low as 9.0×10−8 Acm−2 and 1.95×10−7 Acm−2 at 0.5 MV/cm have been obtained for the as-grown Ta2O5 films formed by photo-induced sol-gel processing and photo-CVD. respectively - several orders of magnitude lower than for any other as-grown films prepared by any other technique. A subsequent low temperature (400°C) UV annealing step improves these to 2.0×10−9 Acm−2 and 6.4× 10−9 Acm−2, respectively. These values are essentially identical to those only previously formed for films annealed at temperatures between 600 and 1000°C. PZT thin films have also been deposited at low temperatures by photo-assisted decomposition of a PZT metal-organic sol-gel polymer using the 172 nm excimer lamp. Very low leakage current densities (10−7 A/cm2) can be achieved, which compared with layers grown by conventional thermal processing. Photo-induced deposition of low dielectric constant organic polymers for interlayer dielectrics has highlighted a significant role of photo effects on the curing of polyamic acid films. I-V measurements showed the leakage current density of the irradiated polymer films was over an order of magnitude smaller than has been obtained in the films prepared by thermal processing. Compared with conventional furnace processing, the photo-induced curing of the polyimide provided both reduced processing time and temperature, A new technique of low temperature photo-induced sol-gel process for the growth of low dielectric constant porous silicon dioxide thin films from TEOS sol-gel solutions with a 172 nm excimer lamp has also been successfully demonstrated. The dielectric constant values as low as 1.7 can be achieved at room temperature. The applications investigated so far clearly demonstrate that low cost high power excimer lamp systems can provide an interesting alternative to conventional UV lamps and excimer lasers for industrial large-scale low temperature materials processing.

Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

2004 ◽  
Vol 151 (6) ◽  
pp. F146 ◽  
Author(s):  
Shou-Yi Chang ◽  
Tzu-Jen Chou ◽  
Yung-Cheng Lu ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Process Window ◽  
Curing Process ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Thermal Stability Of

scholarly journals Effects of Annealing Conditions on Mixed Lead Halide Perovskite Solar Cells and Their Thermal Stability Investigation

Materials ◽  
2017 ◽  
Vol 10 (7) ◽  
pp. 837 ◽  
Author(s):  
Haifeng Yang ◽  
Jincheng Zhang ◽  
Chunfu Zhang ◽  
Jingjing Chang ◽  
Zhenhua Lin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Stability Investigation ◽  
Annealing Conditions ◽  
Halide Perovskite ◽  
Lead Halide

scholarly journals Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory

Nanomaterials ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 799 ◽  
Author(s):  
Jer Wang ◽  
Chyuan Kao ◽  
Chien Wu ◽  
Chun Lin ◽  
Chih Lin
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Dielectric Constants ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Hysteresis Curve ◽  
Band Shift ◽  
K Value ◽  
High K

High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage current reduction, k-value enhancement, and breakdown voltage increase. In this study, the structural and electrical properties of different annealing temperatures on the Nb2O5 and Ti-doped Nb2O5(TiNb2O7) materials used as charge-trapping nano-layers in metal-oxide-high k-oxide-semiconductor (MOHOS)-type memory were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). Analysis of the C-V hysteresis curve shows that the flat-band shift (∆VFB) window of the TiNb2O7 charge-trapping nano-layer in a memory device can reach as high as 6.06 V. The larger memory window of the TiNb2O7 nano-layer is because of a better electrical and structural performance, compared to the Nb2O5 nano-layer.

Influence of Hydrogen Plasma Treatment Upon Native Oxides Plasma Grown on INP

1992 ◽  
Vol 284 ◽  
Author(s):  
E. D. Belyakova ◽  
S. V. Belyakov ◽  
L. S. Berman ◽  
A. T. Gorelenok ◽  
I. N. Karimov ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Negative Charge ◽  
Hydrogen Plasma ◽  
Flat Band ◽  
Band Shift ◽  
Native Oxides ◽  
Effective Oxide Charge ◽  
Reduced Density ◽  
Density Of Interface States ◽  
Mis Structures

Investigations of plasma grown native oxides on indium phosphide carried out recently [1,2] have shown that these oxides exhibit properties which are promising to be used in MIS structures on InP, due to their stable composition which includes [InxPyOz]n polyphosphate phase mainly and due to reduced density of interface states (Nss<1011 eV−1 cm−2). It has been shown also that MIS structures with plasma native oxides exhibit C-V characteristics shifted towards positive values of voltage bias. The flat band shift is assigned to a negative charge injected into oxide film during plasma oxidation. The presence of this negative charge in plasma grown native oxides on InP may cause instability of electric properties of MIS structures [2].The aim of this work was to make an attempt to influence upon negative effective oxide charge density by means of hydrogen plasma treatment.

Investigation on the Thermal and Electrical Properties of Ti-Si-O Film Formed by the Composite Sputtering Deposition

2001 ◽  
Vol 670 ◽  
Author(s):  
Akira Nishiyama ◽  
Akio Kaneko ◽  
Masato Koyama ◽  
Yoshiki Kamata ◽  
Ikuo Fujiwara ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Phase Separation ◽  
Nanocrystalline Film ◽  
Post Deposition Annealing ◽  
Current Increase ◽  
Sputtering Deposition ◽  
Thermal And Electrical Properties ◽  
Sputter Deposited ◽  
Post Deposition

ABSTRACTTi-Si-O films were sputter deposited from TiO2+SiO2 composite targets with various SiO2 content. The phase separation occurred for every SiO2 content used in this experiment (from 14% to 75%) and it has been revealed that nanocrystalline (TiO2)1-x(SiO2)x films in which anatase TiO2 forms tiny grains were obtained when x in the film is larger than 0.26. The tiny grain was effective for suppressing the thermal grooving phenomenon of the thin films by the post deposition annealing which leads to the leakage current increase. The dielectric constant of the nanocrystalline film was varied with the SiO2 content from the value of the bulk anatase to SiO2.

Sign in / Sign up

Export Citation Format

Share Document