Growth and Characterization of Copper Indium Diselenide Thin Films by Molecular Beam Deposition

1996 ◽  
Vol 426 ◽  
Author(s):  
H. Y. Ueng ◽  
D. Y. Chang ◽  
J. L. Lin

AbstractCuInSe2 thin films grown on Corning 7059 glass substrates were prepared by molecular beam deposition method with various Cu/In ratios in order to study the relationship between composition and material properties. Under a fixed copper beam flux intensity and overpressure selenium environments, the composition of films was modulated by changing the indium beam flux: intensity to obtain Cu-rich or In-rich films. The X-ray diffraction patterns show that the epitaxy films grown onto glass substrates are the polycrystalline structure. The grain size of polycrystalline films indicate that the surface morphology of the films are varied as a function of Cu/In ratio.

1998 ◽  
Vol 130-132 ◽  
pp. 651-657 ◽  
Author(s):  
Yuji Yoshida ◽  
Hiroshi Takiguchi ◽  
Takeshi Hanada ◽  
Nobutaka Tanigaki ◽  
Eun Mi Han ◽  
...  

2000 ◽  
Vol 620 ◽  
Author(s):  
Sandrine Heutz ◽  
Sallie M. Bayliss ◽  
Garry Rumbles ◽  
Tim S. Jones

ABSTRACTFree base phthalocyanine films have been grown on glass substrates by organic molecular beam deposition. In situ post-growth annealing of the samples leads to the α → β1 transformation. Different transition states have been identified and their morphological properties studied by atomic force and optical microscopy. The transition occurs via a discrete number of nucleations and is preceded by an elongation of the α crystallites. The β1 crystallites grow but are confined to domains of similar orientation. Increased thickness produces larger domains and better orientation, while only partial transformation occurs below 94 nm.


2001 ◽  
Vol 2 (3-4) ◽  
pp. 143-154 ◽  
Author(s):  
Jiangeng Xue ◽  
Jingui Qin ◽  
Peter V. Bedworth ◽  
Karen Kustedjo ◽  
Seth R. Marder ◽  
...  

2006 ◽  
Vol 88 (11) ◽  
pp. 112907 ◽  
Author(s):  
L. F. Edge ◽  
D. G. Schlom ◽  
P. Sivasubramani ◽  
R. M. Wallace ◽  
B. Holländer ◽  
...  

1993 ◽  
Vol 74 (9) ◽  
pp. 5767-5772 ◽  
Author(s):  
W. M. K. P. Wijekoon ◽  
M. Y. M. Lyktey ◽  
P. N. Prasad ◽  
J. F. Garvey

1995 ◽  
Vol 34 (Part 1, No. 7B) ◽  
pp. 3884-3888 ◽  
Author(s):  
Takayoshi Hayashi ◽  
Tohru Maruno ◽  
Akira Yamashita ◽  
Stefan Fölsch ◽  
Hirohisa Kanbara ◽  
...  

2012 ◽  
Vol 60 (1) ◽  
pp. 137-140 ◽  
Author(s):  
RI Chowdhury ◽  
MS Islam ◽  
F Sabeth ◽  
G Mustafa ◽  
SFU Farhad ◽  
...  

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352  Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)


2000 ◽  
Vol 111-112 ◽  
pp. 99-103
Author(s):  
S Blumstengel ◽  
A Sassella ◽  
A Filippini ◽  
M Gurioli ◽  
W Porzio ◽  
...  

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