Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon

2006 ◽  
Vol 88 (11) ◽  
pp. 112907 ◽  
Author(s):  
L. F. Edge ◽  
D. G. Schlom ◽  
P. Sivasubramani ◽  
R. M. Wallace ◽  
B. Holländer ◽  
...  
1998 ◽  
Vol 130-132 ◽  
pp. 651-657 ◽  
Author(s):  
Yuji Yoshida ◽  
Hiroshi Takiguchi ◽  
Takeshi Hanada ◽  
Nobutaka Tanigaki ◽  
Eun Mi Han ◽  
...  

2004 ◽  
Vol 464-465 ◽  
pp. 398-402 ◽  
Author(s):  
Hirotomo Yanagisawa ◽  
Tsuyoshi Tamaki ◽  
Masakazu Nakamura ◽  
Kazuhiro Kudo

1996 ◽  
Vol 426 ◽  
Author(s):  
H. Y. Ueng ◽  
D. Y. Chang ◽  
J. L. Lin

AbstractCuInSe2 thin films grown on Corning 7059 glass substrates were prepared by molecular beam deposition method with various Cu/In ratios in order to study the relationship between composition and material properties. Under a fixed copper beam flux intensity and overpressure selenium environments, the composition of films was modulated by changing the indium beam flux: intensity to obtain Cu-rich or In-rich films. The X-ray diffraction patterns show that the epitaxy films grown onto glass substrates are the polycrystalline structure. The grain size of polycrystalline films indicate that the surface morphology of the films are varied as a function of Cu/In ratio.


2001 ◽  
Vol 2 (3-4) ◽  
pp. 143-154 ◽  
Author(s):  
Jiangeng Xue ◽  
Jingui Qin ◽  
Peter V. Bedworth ◽  
Karen Kustedjo ◽  
Seth R. Marder ◽  
...  

1993 ◽  
Vol 74 (9) ◽  
pp. 5767-5772 ◽  
Author(s):  
W. M. K. P. Wijekoon ◽  
M. Y. M. Lyktey ◽  
P. N. Prasad ◽  
J. F. Garvey

1995 ◽  
Vol 34 (Part 1, No. 7B) ◽  
pp. 3884-3888 ◽  
Author(s):  
Takayoshi Hayashi ◽  
Tohru Maruno ◽  
Akira Yamashita ◽  
Stefan Fölsch ◽  
Hirohisa Kanbara ◽  
...  

2000 ◽  
Vol 111-112 ◽  
pp. 99-103
Author(s):  
S Blumstengel ◽  
A Sassella ◽  
A Filippini ◽  
M Gurioli ◽  
W Porzio ◽  
...  

1990 ◽  
Vol 8 (6) ◽  
pp. 3934-3937 ◽  
Author(s):  
C. H. Hale ◽  
I. T. Muirhead ◽  
S. P. Fisher ◽  
J. S. Orr ◽  
J. G. H. Mathew ◽  
...  

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