Advanced, Thin, Polycrystalline Silicon-Film™ Solar Cells on Low-Cost Substrates

1996 ◽  
Vol 426 ◽  
Author(s):  
Robert B. Hall ◽  
Allen M. Barnett ◽  
Jeff E. Cotter ◽  
David H. Ford ◽  
Alan E. Ingram ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Silicon Film ◽  
Silicon Layer ◽  
Thin Polycrystalline

AbstractThin, polycrystalline silicon solar cells have the potential for the realization of a 15%, lowcost photovoltaic product. As a photovoltaic material, polycrystalline material is abundant, benign, and electrically stable. The thin-film polycrystalline silicon solar cell design achieves high efficiency by incorporating techniques to enhance optical absorption, ensure electrical confinement, and minimize bulk recombination currents. AstroPower's approach to a thin-film polycrystalline silicon solar cell technology is based on the Silicon-Film™ process, a continuous sheet manufacturing process for the growth of thin films of polycrystalline silicon on low-cost substrates. A new barrier layer and substrate have been developed for advanced solar cell designs. External gettering with phosphorus has been employed to effect significant improvements leading to effective minority carrier diffusion lengths greater than 250 micrometers in the active silicon layer. Light trapping has been observed in 60-micrometer thick films of silicon grown on the new barrier-coated substrate. An efficiency of 12.2% in a 0.659 cm2 solar cell has been achieved with the advanced structure.

A Study of Back Electrode Stacked With Low Cost Reflective Layers For High-Efficiency Thin-Film Silicon Solar Cell

2014 ◽  
Vol 136 (3) ◽  
Author(s):  
Tsung-Wei Chang ◽  
Chao-Te Liu ◽  
Wen-Hsi Lee ◽  
Yu-Jen Hsiao
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
High Performance ◽  
Silicon Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Visible Region ◽  
Particle Diameter ◽  
Solid Content ◽  
Thin Film Silicon

In this study, commercially available white paint is used as a pigmented dielectric reflector (PDR) in the fabrication of a low-cost back electrode stack with an Al-doped ZnO (AZO) layer for thin-film silicon solar cell applications. An initial AZO film was deposited by the radio-frequency magnetron sputtering method. In order to obtain the highest transmittance and lowest resistivity of AZO film, process parameters such as sputtering power and substrate temperature were investigated. The optimal 100-nm-thick AZO film with low resistivity and high transmittance in the visible region are 6.4 × 10−3 Ω·cm and above 80%, respectively. Using glue-like white paint doped withTiO2 nanoparticles as the PDR enhances the external quantum efficiency (EQE) of a microcrystalline silicon absorptive layer owing to the doped white particles improving Fabry–Pérot interference (FPI), which raises reflectance and scattering ability. To realize the cost down requirement, decreasing the noble metal film thickness such as a 30-nm-thick silver reflector film, and a small doping particle diameter (D50 = 135 nm) and a high solid content (20%) lead to FPI improvement and a great EQE, which is attributed to improved scattering and reflectivity because of optimum diameter (Dopt) and thicker PDR film. The results indicate that white paint can be used as a reflector coating in low-cost back-electrode structures in high-performance electronics.

scholarly journals Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics

Crystals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 87 ◽  
Author(s):  
Yunyan Zhang ◽  
Huiyun Liu
Keyword(s):  
Thin Film ◽  
Energy Source ◽  
Solar Cells ◽  
Solar Cell ◽  
Solar Energy ◽  
High Efficiency ◽  
Low Cost ◽  
Thin Film Solar Cells ◽  
Solar Photovoltaics ◽  
The Cost

Solar energy is abundant, clean, and renewable, making it an ideal energy source. Solar cells are a good option to harvest this energy. However, it is difficult to balance the cost and efficiency of traditional thin-film solar cells, whereas nanowires (NW) are far superior in making high-efficiency low-cost solar cells. Therefore, the NW solar cell has attracted great attention in recent years and is developing rapidly. Here, we review the great advantages, recent breakthroughs, novel designs, and remaining challenges of NW solar cells. Special attention is given to (but not limited to) the popular semiconductor NWs for solar cells, in particular, Si, GaAs(P), and InP.

The Development and Application of High-Efficiency Low-Cost Silicon Thin Film Solar Cell

2015 ◽  
Vol 1771 ◽  
pp. 97-107
Author(s):  
Xueshi Tan ◽  
Bingxue Mao ◽  
Feng Zhang ◽  
Jingjing Yang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
System Integration ◽  
High Efficiency ◽  
Low Cost ◽  
Silicon Solar Cells ◽  
Silicon Thin Film ◽  
Photovoltaic Conversion Efficiency ◽  
Degradation Effect

ABSTRACTFor the industrial application of silicon thin film solar cells, the current focus is on how to realize high-efficiency low-cost production process and minimize light-induced degradation effect, thus effectively reducing the balance-of-system (BOS) costs of system integration. In this paper, a brief introduction based on our development and application in this area is presented, highlighting in the achievement of some layers in a-Si:H/μc-Si:H tandem solar cell by optimizing the property of single layers, such as amorphous intrinsic layer, intermediate reflective layer and microcrystalline intrinsic layer. After transferring the process achievement to the industrial production line, we obtained the low-cost thin-film silicon solar cells with high photovoltaic conversion efficiency of 10.2%.

Thin Polycrystalline Silicon Solar Cells

MRS Bulletin ◽  
1993 ◽  
Vol 18 (10) ◽  
pp. 33-37 ◽  
Author(s):  
Allen M. Barnett ◽  
Robert B. Hall ◽  
James A. Rand
Keyword(s):  
Solar Cells ◽  
Polycrystalline Silicon ◽  
High Efficiency ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Limiting Factors ◽  
Back Surface ◽  
Subsequent Work ◽  
Thin Polycrystalline

Solar cells formed with thin silicon active layers (<100 μm thick) offer advantages over thick ingot-based devices. The advantages come in two forms: the first is the potential for higher conversion efficiency than that of conventional thick devices, and the second is a reduction in material requirements. The use of thin polycrystalline silicon for solar cells offers the potential of capturing the high performance of crystalline silicon while achieving the potential low cost of thin films. Experimental and theoretical studies initially uncovered the issues of grain size and thickness as limiting factors. Subsequent work added the issue of back-surface passivation. This article addresses the conditions required for the successful development of polycrystalline silicon into a high efficiency, low-cost, terrestrial product.

High Haze and Low Resistive MgO/AZO Bi-layer Transparent Conducting Oxide for Thin Film Solar Cells

2011 ◽  
Vol 1327 ◽  
Author(s):  
Dong Won Kang ◽  
Jong Seok Woo ◽  
Sung Hwan Choi ◽  
Seung Yoon Lee ◽  
Heon Min. Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Transparent Conducting Oxide ◽  
Visible Region ◽  
Xrd Analysis ◽  
Thin Film Solar Cells ◽  
Microcrystalline Silicon ◽  
Transparent Conducting

ABSTRACTWe have propsed MgO/AZO bi-layer transparent conducting oxide (TCO) for thin film solar cells. From XRD analysis, it was observed that the full width at half maximum of AZO decreased when it was grown on MgO precursor. The Hall mobility of MgO/AZO bi-layer was 17.5cm2/Vs, whereas that of AZO was 20.8cm2/Vs. These indicated that the crystallinity of AZO decreased by employing MgO precursor. However, the haze (=total diffusive transmittance/total transmittance) characteristics of highly crystalline AZO was significantly improved by MgO precursor. The average haze in the visible region increased from 14.3 to 48.2%, and that in the NIR region increased from 6.3 to 18.9%. The reflectance of microcrystalline silicon solar cell was decreased and external quantum efficiency was significantly improved by applying MgO/AZO bi-layer TCO. The efficiency of microcrystalline silicon solar cell with MgO/AZO bi-layer front TCO was 6.66%, whereas the efficiency of one with AZO single TCO was 5.19%.

On the efficiency of perovskite solar cells with a back reflector: effect of a hole transport material

2021 ◽  
Author(s):  
F. Bonnín-Ripoll ◽  
Ya. B. Martynov ◽  
R. G. Nazmitdinov ◽  
G. Cardona ◽  
R. Pujol-Nadal
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
High Efficiency ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Optimal Thickness ◽  
Back Reflector

A thorough optical + electrical + Lambertian scattering analysis determines the optimal thickness of a perovskite thin-film solar cell revealing its high efficiency with inorganic HTMs.

scholarly journals III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

2014 ◽  
Vol 1 (3-4) ◽  
Author(s):  
Nikhil Jain ◽  
Mantu K. Hudait
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Si Substrate ◽  
Future Outlook ◽  
Si Solar Cells ◽  
Multijunction Solar Cells ◽  
The Future ◽  
Multijunction Solar Cell

AbstractAchieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of ~25%, III–V compound semiconductor based solar cells have steadily shown performance improvement at ~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III–V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III–V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III–V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III–V-on-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III–V multijunction solar cells on Si are reviewed. Different technological routes for integrating III–V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III–V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III–V solar cell efficiencies, the future prospects for successful integration of III–V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

scholarly journals Solution-Processed CdTe Thin-Film Solar Cells Using ZnSe Nanocrystal as a Buffer Layer

2018 ◽  
Vol 8 (7) ◽  
pp. 1195 ◽  
Author(s):  
Yanru Chen ◽  
Xianglin Mei ◽  
Xiaolin Liu ◽  
Bin Wu ◽  
Junfeng Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
High Efficiency ◽  
Low Cost ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Solution Processed ◽  
Cdte Nanocrystal ◽  
First Time

The CdTe nanocrystal (NC) is an outstanding, low-cost photovoltaic material for highly efficient solution-processed thin-film solar cells. Currently, most CdTe NC thin-film solar cells are based on CdSe, ZnO, or CdS buffer layers. In this study, a wide bandgap and Cd-free ZnSe NC is introduced for the first time as the buffer layer for all solution-processed CdTe/ZnSe NC hetero-junction thin-film solar cells with a configuration of ITO/ZnO/ZnSe/CdTe/MoOx/Au. The dependence of the thickness of the ZnSe NC film, the annealing temperature and the chemical treatment on the performance of NC solar cells are investigated and discussed in detail. We further develop a ligand-exchanging strategy that involves 1,2-ethanedithiol (EDT) during the fabrication of ZnSe NC film. An improved power conversion efficiency (PCE) of 3.58% is obtained, which is increased by 16.6% when compared to a device without the EDT treatment. We believe that using ZnSe NC as the buffer layer holds the potential for developing high-efficiency, low cost, and stable CdTe NC-based solar cells.

Influence of precursor type on non-toxic hybrid inks for high-efficiency Cu2ZnSnS4 thin-film solar cells

2014 ◽  
Vol 16 (9) ◽  
pp. 4323-4332 ◽  
Author(s):  
Kyujin Kim ◽  
Inhyuk Kim ◽  
Yunjung Oh ◽  
Daehee Lee ◽  
Kyoohee Woo ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Thin Film Solar Cells ◽  
Cu2znsns4 Thin Film

A Cu2ZnSnS4 solar cell with an efficiency of 8.17% was fabricated using a non-toxic solvent-based hybrid-ink without the involvement of a complex synthesis, toxic solvents or harmful post-selenization.

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