Influence Of The Density of States and Series Resistance on the Field-Effect Activation Energy in a-Si:H TFT

1996 ◽  
Vol 424 ◽  
Author(s):  
Chun-Ying Chen ◽  
Jerzy Kanicki

AbstractWe have proposed a new two-dimensional simulation model, which takes into account the density of states of hydrogenated amorphous silicon (a-Si:H) and temperature-dependence of the source/drain series resistances (Rs), to explain the dependence of the activation energy (Eact) of drain-source current (IDs) on gate-source bias (VGs) in a-Si:H thin-film transistors (TFTs). We found that the influence of series resistance cannot be ignored, else an overestimated Eact will result. The results of our simulation are in agreement with experimentally observed saturation of the Eact at higher VGs.

1986 ◽  
Vol 70 ◽  
Author(s):  
Ruud E. I. Schropp ◽  
Jan Snijder ◽  
Jan F. Verwey

ABSTRACTThe dependence of the conductance prefactor on the activation energy in accordance with the Meyer-Neldel relation has been observed in a-Si:H, by measuring the temperature dependence of the field-effect in a-Si:H thin-film transistors. The Meyer-Neldel rule is for the first time properly taken into account in the analysis of the field-effect, thereby considering the non-uniform shift of the Fermi-level as induced by the gate bias. The analysis also yields the flat-band voltage, which is an important parameter in the density of states evaluation. The density of states is shown to be considerably overestimated in conventional analysis.


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