Two‐dimensional simulation study of field‐effect operation in undoped poly‐Si thin‐film transistors

1995 ◽  
Vol 78 (10) ◽  
pp. 6122-6131 ◽  
Author(s):  
Hyang‐Shik Kong ◽  
Choochon Lee
Keyword(s):  
Thin Film ◽  
Simulation Study ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Two Dimensional ◽  
Dimensional Simulation ◽  
Si Thin Film

Two dimensional simulation and modeling of the electrical behavior in nanocrystalline silicon thin-film transistors

2008 ◽  
Vol 103 (10) ◽  
pp. 104507 ◽  
Author(s):  
N. Archontas ◽  
N. Georgoulas ◽  
C. A. Dimitriadis ◽  
F. Templier ◽  
M. Oudwan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nanocrystalline Silicon ◽  
Two Dimensional ◽  
Simulation And Modeling ◽  
Electrical Behavior ◽  
Silicon Thin Film ◽  
Dimensional Simulation

Influence Of The Density of States and Series Resistance on the Field-Effect Activation Energy in a-Si:H TFT

1996 ◽  
Vol 424 ◽  
Author(s):  
Chun-Ying Chen ◽  
Jerzy Kanicki
Keyword(s):  
Activation Energy ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Series Resistance ◽  
Hydrogenated Amorphous Silicon ◽  
Two Dimensional ◽  
Source Current ◽  
Dimensional Simulation ◽  
Hydrogenated Amorphous

AbstractWe have proposed a new two-dimensional simulation model, which takes into account the density of states of hydrogenated amorphous silicon (a-Si:H) and temperature-dependence of the source/drain series resistances (Rs), to explain the dependence of the activation energy (Eact) of drain-source current (IDs) on gate-source bias (VGs) in a-Si:H thin-film transistors (TFTs). We found that the influence of series resistance cannot be ignored, else an overestimated Eact will result. The results of our simulation are in agreement with experimentally observed saturation of the Eact at higher VGs.

Submicron-meter tunneling field-effect poly-Si thin-film transistors with a thinned channel layer

2011 ◽  
Vol 88 (1) ◽  
pp. 32-35 ◽  
Author(s):  
M.-H. Juang ◽  
Y.-S. Peng ◽  
D.-C. Shye ◽  
J.-L. Wang ◽  
C.-C. Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Channel Layer ◽  
Si Thin Film

The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

2014 ◽  
Vol 104 (23) ◽  
pp. 233306 ◽  
Author(s):  
Kenji Kotsuki ◽  
Hiroshige Tanaka ◽  
Seiji Obata ◽  
Sven Stauss ◽  
Kazuo Terashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Spinning Speed
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