Improved a-Si:H TFT Performance Using a-SixN1-x / a-SixC1-x Stack Dielectrics

1996 ◽  
Vol 424 ◽  
Author(s):  
G. Lavareda ◽  
E. Fortunato ◽  
C. Nunes Carvalho ◽  
R. Martins
Keyword(s):  
Silicon Carbide ◽  
Dielectric Constant ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Relative Dielectric Constant ◽  
Dielectric Materials ◽  
Electrical Characteristics ◽  
Amorphous Silicon Nitride ◽  
Dielectric Layers ◽  
Improve Device

AbstractIn this paper we present a study on the electrical characteristics (conductivity, σ and relative dielectric constant, εr,.) of amorphous silicon nitride (a-SixN1-x) and carbide (a-SixC1-x) films deposited by PECVD, used as dielectric materials in TFT devices, aiming to select the most adequate alloy that lead to improve device performances. Besides that, double stack a-SixN1-x/a-SixC1-x structures were developed and applied as dielectric layers on TFTs, whose performances show to be superior to those ones using single silicon nitride or silicon carbide as dielectric.

The Processing and Properties of Multilayer Interconnection Structures Using Thermoset Films Derived from Bisbenzocyclobutene.

1989 ◽  
Vol 154 ◽  
Author(s):  
P. H. Townsend ◽  
D. C. Burdeaux ◽  
S. F. Hahn ◽  
M. Thomsen ◽  
J. N. Carr
Keyword(s):  
Dielectric Constant ◽  
Thermal Cycling ◽  
Relative Dielectric Constant ◽  
Electrical Characteristics ◽  
Processing Conditions ◽  
Dielectric Layers ◽  
Significant Change

AbstractMultilayer interconnection structures incorporating a novel polymeric dielectric derived from a bis-benzocyclobutene(bis-BCB) monomer have been fabricated. This paper discusses the processing conditions for the construction of these circuits and describes electrical characteristics of the dielectric layers. The relative dielectric constant of the BCB film was 2.7. Thermal cycling produced no significant change in the conductance of three level metal via chains through two layers of the polymer.

Percolation Behaviour in the Electrical Characteristics of Hydrogenated Amorphous Silicon Nitride Films.

1992 ◽  
Vol 258 ◽  
Author(s):  
J.M. López-Villegas ◽  
B. Garrido ◽  
M.S. Benrakkad ◽  
J. Samitier ◽  
E. Bertran ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Hydrogenated Amorphous Silicon ◽  
Electrical Characteristics ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
Rf Glow Discharge ◽  
Ohmic Conductivity ◽  
Hydrogenated Amorphous

ABSTRACTThe electro-optical properties of hydrogenated amorphous silicon nitride films (a-SiNx:H) prepared by rf glow discharge of SiH4 and N2 have been determined as a function of the silicon content in the alloy. The stoichiometry and structure of the layers have been studied by ellipsometry, infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Two different electrical behaviours have been found. The samples with x>0.8 show conductivity based on the Frenkel-Poole mechanism, while the samples with x<0.8 show quasi-ohmic conductivity. Both kinds of conduction and the transition between them are analyzed in the framework of the percolation theory. In this context, the correlation between the stoichiometry and structure of the layers with their electrical behaviour indicate that the transition from the Frenkel-Poole to the quasi-ohmic conduction is a consequence of the formation of conducting paths as the percolation threshold of Si-Si bonds is reached.

scholarly journals Hydrogen effects on the thermal conductivity of delocalized vibrational modes in amorphous silicon nitride (a−SiNx:H)

2021 ◽  
Vol 5 (3) ◽  
Author(s):  
Jeffrey L. Braun ◽  
Sean W. King ◽  
Eric R. Hoglund ◽  
Mehrdad Abbasi Gharacheh ◽  
Ethan A. Scott ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Vibrational Modes ◽  
Amorphous Silicon Nitride

scholarly journals Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Chemical Vapor ◽  
Peak Position ◽  
Excitation Wavelength ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

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