Emission Characteristics of the Mo-Coated Silicon Tips

1996 ◽  
Vol 424 ◽  
Author(s):  
Heung-Woo Park ◽  
Byeong-Kwon Ju ◽  
Jae-Hoon Jung ◽  
Yun-Hi Lee ◽  
Jung-Ho Park ◽  
...  
Keyword(s):  
Field Emission ◽  
High Vacuum ◽  
Reactive Ion Etching ◽  
Current Fluctuations ◽  
Emission Characteristics ◽  
Ion Etching ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
High Vacuum Environment

AbstractUniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was then coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were measured in the high vacuum environment. Field emission currents were proved by the Fowler-Nordheim plot studies.

scholarly journals Field Emission Properties of Polymer Graphite Tips Prepared by Membrane Electrochemical Etching

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1294
Author(s):  
Alexandr Knápek ◽  
Rashid Dallaev ◽  
Daniel Burda ◽  
Dinara Sobola ◽  
Mohammad M. Allaham ◽  
...  
Keyword(s):  
Field Emission ◽  
Electrochemical Etching ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Test Field ◽  
Current Voltage ◽  
Field Emission Microscopy ◽  
Emission Behavior ◽  
Current Voltage Characteristics ◽  
Emission Microscopy

This paper investigates field emission behavior from the surface of a tip that was prepared from polymer graphite nanocomposites subjected to electrochemical etching. The essence of the tip preparation is to create a membrane of etchant over an electrode metal ring. The graphite rod acts here as an anode and immerses into the membrane filled with alkali etchant. After the etching process, the tip is cleaned and analyzed by Raman spectroscopy, investigating the chemical composition of the tip. The topography information is obtained using the Scanning Electron Microscopy and by Field Emission Microscopy. The evaluation and characterization of field emission behavior is performed at ultra-high vacuum conditions using the Field Emission Microscopy where both the field electron emission pattern projected on the screen and current–voltage characteristics are recorded. The latter is an essential tool that is used both for the imaging of the tip surfaces by electrons that are emitted toward the screen, as well as a tool for measuring current–voltage characteristics that are the input to test field emission orthodoxy.

Band-Bending Effects on Field Electron Emission From N- and P-Type Silicon Gated Emitter Tips

1999 ◽  
Vol 558 ◽  
Author(s):  
T. Matsukawa ◽  
K. Tokunaga ◽  
S. Kanemaru ◽  
J. Itoh
Keyword(s):  
Field Emission ◽  
Potential Barrier ◽  
Device Simulation ◽  
Surface States ◽  
Emission Characteristics ◽  
Band Bending ◽  
Type Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTField emission characteristics from n- and p-type silicon gated emitter tips have been investigated in detail by means of experiments and theoretical estimation of band-bending induced by surface states. Single-tip emitters have been fabricated from n- and p-type silicon and their current-voltage characteristics have been evaluated. The field emission from the p-type emitter has been found to occur at lower extraction voltage than that of the n-type emitter. As the theoretical approach to the origin of the phenomena, potential distribution in the emitter tips has been calculated by using device simulation technique. The surface states of the n-type emitter tip are negatively charged and form a potential barrier against the electrons. On the contrary, there is no potential barrier in the p-type tips. The potential barrier in the n-type tip prevents electrons from reaching the tip apex. This is the reason why the emission current of the n-type emitter was suppressed lower than that of the p-type emitter.

scholarly journals Methods for measuring the local emission characteristics of CNT based multi-tip emitters

2021 ◽  
Vol 2103 (1) ◽  
pp. 012116
Author(s):  
E O Popov ◽  
A G Kolosko ◽  
S V Filippov ◽  
S A Ponyaev
Keyword(s):  
Enhancement Factor ◽  
Field Enhancement ◽  
Emission Characteristics ◽  
Large Area ◽  
Software Complex ◽  
Emission Area ◽  
Current Voltage ◽  
Local Emission ◽  
Current Voltage Characteristics ◽  
Comparison Of The Results

Abstract The work is aimed at obtaining microscopic emission characteristics of individual emission sites of a multi-tip field cathode or large-area emitter (LAFE) based on processing the current-voltage characteristics and emission glow patterns. Processing was carried out on a hardware-software complex for the study of field emission characteristics in real time. The calculation of the microscopic characteristics of the local emission sites — the field enhancement factor and emission area — was carried out by several different algorithms. A comparison of the results showed that the algorithms gave close values of the characteristics, which increases the reliability of the estimates made.

Field Emission Energy Distribution and Current-Voltage Characteristics Using Single Tip Gated Diodes

1999 ◽  
Vol 558 ◽  
Author(s):  
John M Bernhard ◽  
Ambrosio A. Rouse ◽  
Edward D. Sosa ◽  
Bruce E. Gnade ◽  
David E. Golden ◽  
...  
Keyword(s):  
Energy Distribution ◽  
Data Acquisition ◽  
Work Function ◽  
Field Emission ◽  
Low Cost ◽  
Energy Analyzer ◽  
Flat Surfaces ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Camac Crate

ABSTRACTField emission current-voltage characteristics and simultaneous field emission electron energy distributions have been measured using single tip gate diodes. An energy distribution is generated at each step of a current-voltage characteristic using a compact low-cost simulated hemispherical energy analyzer. A PC programmed with graphics-based data acquisition software is used for data acquisition and control. The PC is connected to a CAMAC crate and a picoammeter through a GPIB interface. The picoammeter measures the current leaving the tip and the field emission electrons are energy analyzed, detected and processed in the CAMAC crate. The CAMAC crate also sends control voltages. to the gate anode and the energy analyzer. This apparatus was used to measure tip work functions and Fowler-Nordheim tip shape parameters for Mo and IrO2 field emission tips. Work function measurements from field emission tips are compared to photoelectric work function measurements from flat surfaces.

Deep reactive ion etching for lateral field emission devices

2000 ◽  
Vol 21 (6) ◽  
pp. 271-273 ◽  
Author(s):  
V. Milanovic ◽  
L. Doherty ◽  
D.A. Teasdale ◽  
C. Zhang ◽  
S. Parsa ◽  
...  
Keyword(s):  
Field Emission ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Lateral Field ◽  
Deep Reactive Ion Etching ◽  
Field Emission Devices

Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC

2013 ◽  
Vol 740-742 ◽  
pp. 1010-1013 ◽  
Author(s):  
Alexey V. Afanasyev ◽  
Boris V. Ivanov ◽  
Vladimir A. Ilyin ◽  
Alexey F. Kardo-Sysoev ◽  
Maria A. Kuznetsova ◽  
...  
Keyword(s):  
Field Emission ◽  
Wide Bandgap ◽  
Voltage Characteristic ◽  
Vacuum Field ◽  
Current Voltage ◽  
Capacitor Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics ◽  
Manufacturing Methods ◽  
Diode Current

This paper presents the results of research and development of two types diode structures based on wide bandgap 4H-SiC: drift step recovery diodes (DSRDs) and field emission diodes (FED). Diodes’ structure and manufacturing methods are reviewed. Diode’s characteristics were obtained (static current-voltage characteristics and capacitor-voltage characteristic, switching properties’ characteristics for DSRDs). Field emission 4H-SiC structures illustrated high (≥102 А/сm2) current densities at electric field intensity of approximately 10V/um. 4H-SiC DSRDs in the generator structure with a single oscillating contour allowed to form sub nanosecond impulses at a load 50 Ohm and 1,5-2kV amplitude for a single diode (current density at V=2kV J= 4•103 А/сm2),what is significantly higher than similar DSRD’s parameters obtained for silicon.

scholarly journals Проверка применимости закона полевой эмиссии к исследованию многоострийных полевых эмиттеров методом анализа степени предэкспоненциального множителя напряжения

2019 ◽  
Vol 45 (18) ◽  
pp. 13
Author(s):  
Е.О. Попов ◽  
А.Г. Колосько ◽  
С.В. Филиппов
Keyword(s):  
Experimental Data ◽  
Carbon Nanotubes ◽  
Statistical Analysis ◽  
Field Emission ◽  
Power Law ◽  
Constant Voltage ◽  
Current Voltage ◽  
Power Law Exponent ◽  
Emission Mode ◽  
Current Voltage Characteristics

A method for testing the compliance of experimental current-voltage characteristics with a cold field emission mode is described. The method is based on the variation of voltage power-law exponent in the semilogarithmic coordinates ln (I/U^k) vs1/U, as well as the statistical analysis of experimental data fluctuations. It is shown that the current-voltage characteristics obtained using the high-voltage fast-scanning technique have a better fit to the field emission law than the characteristics given by a slow scanning with a constant voltage. A multi-tip nanocomposite emitter based on carbon nanotubes was taken as a sample. For processing experimental data, it was proposed to use modified Fowler-Nordheim coordinates with a voltage power-law exponent of 1.24.

Structure and emission properties of structures based on carbon walls and aluminum nitride

2021 ◽  
Author(s):  
S.A. Bagdasaryan ◽  
S.A. Nalimov
Keyword(s):  
Field Emission ◽  
Hexagonal Lattice ◽  
Opal Matrix ◽  
Emission Properties ◽  
Graphene Layers ◽  
Composition And Structure ◽  
Current Voltage ◽  
Aln Film ◽  
Current Voltage Characteristics ◽  
Field Emission Cathodes

To create field emission cathodes (autocathodes) used in the manufacture of displays and other devices, carbon nanowalls (CNW) are promising. The CNW layers are a porous material consisting of curved plates formed by graphene layers. The industrial use of CNW autocathodes is impeded by the heterogeneity and instability of the magnitude and density of the cathode current. To improve the characteristics of autocathodes, an AlN film is formed on the surface of the emitting substance, which also has the property of field emission. CNW was obtained from a gas mixture of H2 and CH4 activated by a dc glow discharge. The CNW layers were deposited on silicon substrates and substrates representing a layered structure made by forming an opal matrix (OM) layer on a Si substrate. AlN films with controlled composition and structure were prepared by RF magnetron reactive sputtering. CNW layers with a thickness of > 4 μm were obtained by successive growth of two CNW layers (Si/CNW/CNW structure). An additional CNW layer was also grown on the surface of the first layer coated with Ni (Si/CNW/Ni/CNW structure). AlN films were grown on a CNW layer (Si/CNW/AlN and Si/OM/Ni/CNW/AlN structures). It is shown that CNW plates are formed from graphene layers partially connected by atomic bonds (up to 30 layers) packed in a hexagonal lattice, and AlN films consisted of amorphous and axially textured crystalline phases. The current-voltage characteristics of the autocathodes were measured in a pulsed mode at a pressure of ~10−3 Pa. The Si/CNW/CNW structures are characterized by a threshold of autoemission of ≤ 3.6 V/μm and a high density of centers of emission. The current-voltage characteristics of the layered structures Si/CNW/AlN, Si/OM/Ni/CNW and Si/OM/Ni/CNW /AlN showed better emission properties compared to the Si/CNW structure. The current-voltage characteristics considered make it possible to predict the structure and composition of the emitting layer to improve the operational characteristics of multilayer autocathodes.

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