Atomic Hydrogen Effects on the Optical and Electrical Properties of Transparent Conducting Oxides For a-Si:H TFT-LCDs

1996 ◽  
Vol 424 ◽  
Author(s):  
Je-Hsiung Lan ◽  
Jerzy Kanicki

AbstractThe effects of the atomic hydrogen treatment (H-treatment) of indium-tin oxide (ITO) and aluminum-doped zinc oxide (AZO) films have been investigated. The atomic hydrogen was generated by hot-wire chemical vapor deposition (HW-CVD) technique. Experimental results have shown that AZO films are chemically very stable under the H-treatment; almost no variation in the optical transmittance and electrical resistivity was observed. On the contrary, ITO films, either prepared by sputtering with ex-situ or in-situ thermal-annealing, have shown severe optical and electrical degradation and surface whitening after the H-treatment. SEM studies of the H-treated ITO surfaces have revealed that the surface whitening was due to the increase in surface roughness and the formation of granule-like metallic balls. Auger electron spectroscopy has indicated that the balls were mainly composed of indium atoms and the areas between balls were rich in oxygen atoms. These results were confirmed by X-ray diffraction and X-ray photoelectron spectroscopy measurements done on ITO before and after the H-treatment. Finally, we have demonstrated that a-SiO, deposited by PECVD will completely suppress the chemical reaction between ITO surfaces and atomic hydrogen generated by HW-CVD technique.

Polymers ◽  
2021 ◽  
Vol 13 (11) ◽  
pp. 1886
Author(s):  
Torben Schlebrowski ◽  
Henriette Lüber ◽  
Lucas Beucher ◽  
Melanie Fritz ◽  
Youssef Benjillali ◽  
...  

Polyamide 6 (PA6) is a commonly used material in many different sectors of modern industry. Herein, PA6 samples were coated with amorphous carbon layers (a-C:H) with increasing thickness up to 2 µm using radio frequency plasma enhanced chemical vapor deposition for surface adjustment. The morphology of the carbon coatings was inspected by ex situ atomic force microscopy and scanning electron microscopy. Surface wettability was checked by contact angle measurements. The chemical composition was analyzed using the surface sensitive synchrotron X-ray-based techniques near-edge X-ray absorption fine structure and X-ray photoelectron spectroscopy, supported by diffuse reflectance infrared Fourier transform spectroscopy. Particular attention was paid to the coating interval from 0 to 100 nm, to specify the interlayer thickness between the PA6 polymer and a-C:H coating, and the region between 1000 and 2000 nm, where dehydrogenation of the a-C:H layer occurs. The interlayer is decisive for the linkage of the deposited carbon layer on the polymer: the more pronounced it is, the better the adhesion. The thickness of the interlayer could be narrowed down to 40 nm in all used methods, and the dehydrogenation process takes place at a layer thickness of 1500 nm.


2020 ◽  
Vol 6 (3) ◽  
pp. 51 ◽  
Author(s):  
Torben Schlebrowski ◽  
Zineb Kassab ◽  
Mounir El Achaby ◽  
Stefan Wehner ◽  
Christian B. Fischer

The substitution of petroleum-based polymers with naturally derived biopolymers may be a good alternative for the conservation of natural fossil resources and the alleviation of pollution and waste disposal problems. However, in order to be used in a wide range of applications, some biopolymers’ properties should be enhanced. In this study, biocompatible, non-toxic, and biodegradable chitosan (CS) film and CS reinforced with 10 wt% of cellulose nanocrystals (CN–CS) were coated with amorphous hydrogenated carbon layers (a–C:H) of different thickness. To investigate the effect of the nano-reinforcement on the a–C:H layer applied, mild radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) was used to coat the CS and its CN–CS bio-nanocomposite film. Both the surface characteristics and the chemical composition were analyzed. The surface morphology and wettability were examined by ex-situ atomic force microscopy (AFM) and contact angle measurements (CA), respectively. Hereby, the relationship between sp2/sp3 ratios on a macroscopic scale was also evaluated. For the investigation of the chemical composition, the surface sensitive synchrotron X-ray radiation techniques near edge X-ray absorption fine structure (NEXAFS) and X-ray photoelectron spectroscopy (XPS) as well as diffuse reflectance infrared Fourier transform spectroscopy (DRIFT) were used.


2007 ◽  
Vol 22 (5) ◽  
pp. 1230-1234 ◽  
Author(s):  
L.V. Saraf ◽  
M.H. Engelhard ◽  
C.M. Wang ◽  
A.S. Lea ◽  
D.E. McCready ◽  
...  

Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc [Zn(TMHD)2] is a relatively uninvestigated precursor that was used in this work to grow highly c-axis-oriented ZnO films on Si(100). X-ray photoelectron spectroscopy studies before and after Ar ion sputtering indicated that surface carbon on several samples was reduced from as much as 34 at.% to much less than 1 at.% within the first 5 nm, indicating very clean Zn(TMHD)2 precursor decomposition. Microstructural and compositional analysis revealed columnar ZnO grains with domain widths of approximately half the total film thickness and a Zn-to-O atomic percent ratio indicative of stoichometric ZnO.


2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.


2020 ◽  
Author(s):  
Jennifer A. Rudd ◽  
Ewa Kazimierska ◽  
Louise B. Hamdy ◽  
Odin Bain ◽  
Sunyhik Ahn ◽  
...  

The utilization of carbon dioxide is a major incentive for the growing field of carbon capture. Carbon dioxide could be an abundant building block to generate higher value products. Herein, we describe the use of porous copper electrodes to catalyze the reduction of carbon dioxide into higher value products such as ethylene, ethanol and, notably, propanol. For <i>n</i>-propanol production, faradaic efficiencies reach 4.93% at -0.83 V <i>vs</i> RHE, with a geometric partial current density of -1.85 mA/cm<sup>2</sup>. We have documented the performance of the catalyst in both pristine and urea-modified foams pre- and post-electrolysis. Before electrolysis, the copper electrode consisted of a mixture of cuboctahedra and dendrites. After 35-minute electrolysis, the cuboctahedra and dendrites have undergone structural rearrangement. Changes in the interaction of urea with the catalyst surface have also been observed. These transformations were characterized <i>ex-situ</i> using scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. We found that alterations in the morphology, crystallinity, and surface composition of the catalyst led to the deactivation of the copper foams.


1999 ◽  
Vol 567 ◽  
Author(s):  
Renee Nieh ◽  
Wen-Jie Qi ◽  
Yongjoo Jeon ◽  
Byoung Hun Lee ◽  
Aaron Lucas ◽  
...  

ABSTRACTBa0.5Sr0.5TiO3 (BST) is one of the high-k candidates for replacing SiO2 as the gate dielectric in future generation devices. The biggest obstacle to scaling the equivalent oxide thickness (EOT) of BST is an interfacial layer, SixOy, which forms between BST and Si. Nitrogen (N2) implantation into the Si substrate has been proposed to reduce the growth of this interfacial layer. In this study, capacitors (Pt/BST/Si) were fabricated by depositing thin BST films (50Å) onto N2 implanted Si in order to evaluate the effects of implant dose and annealing conditions on EOT. It was found that N2 implantation reduced the EOT of RF magnetron sputtered and Metal Oxide Chemical Vapor Deposition (MOCVD) BST films by ∼20% and ∼33%, respectively. For sputtered BST, an implant dose of 1×1014cm−;2 provided sufficient nitrogen concentration without residual implant damage after annealing. X-ray photoelectron spectroscopy data confirmed that the reduction in EOT is due to a reduction in the interfacial layer growth. X-ray diffraction spectra revealed typical polycrystalline structure with (111) and (200) preferential orientations for both films. Leakage for these 50Å BST films is on the order of 10−8 to 10−5 A/cm2—lower than oxynitrides with comparable EOTs.


Author(s):  
Xinyue Li ◽  
Marco Fortunato ◽  
Anna Maria Cardinale ◽  
Angelina Sarapulova ◽  
Christian Njel ◽  
...  

AbstractNickel aluminum layered double hydroxide (NiAl LDH) with nitrate in its interlayer is investigated as a negative electrode material for lithium-ion batteries (LIBs). The effect of the potential range (i.e., 0.01–3.0 V and 0.4–3.0 V vs. Li+/Li) and of the binder on the performance of the material is investigated in 1 M LiPF6 in EC/DMC vs. Li. The NiAl LDH electrode based on sodium alginate (SA) binder shows a high initial discharge specific capacity of 2586 mAh g−1 at 0.05 A g−1 and good stability in the potential range of 0.01–3.0 V vs. Li+/Li, which is better than what obtained with a polyvinylidene difluoride (PVDF)-based electrode. The NiAl LDH electrode with SA binder shows, after 400 cycles at 0.5 A g−1, a cycling retention of 42.2% with a capacity of 697 mAh g−1 and at a high current density of 1.0 A g−1 shows a retention of 27.6% with a capacity of 388 mAh g−1 over 1400 cycles. In the same conditions, the PVDF-based electrode retains only 15.6% with a capacity of 182 mAh g−1 and 8.5% with a capacity of 121 mAh g−1, respectively. Ex situ X-ray photoelectron spectroscopy (XPS) and ex situ X-ray absorption spectroscopy (XAS) reveal a conversion reaction mechanism during Li+ insertion into the NiAl LDH material. X-ray diffraction (XRD) and XPS have been combined with the electrochemical study to understand the effect of different cutoff potentials on the Li-ion storage mechanism. Graphical abstract The as-prepared NiAl-NO3−-LDH with the rhombohedral R-3 m space group is investigated as a negative electrode material for lithium-ion batteries (LIBs). The effect of the potential range (i.e., 0.01–3.0 V and 0.4–3.0 V vs. Li+/Li) and of the binder on the material’s performance is investigated in 1 M LiPF6 in EC/DMC vs. Li. Ex situ X-ray photoelectron spectroscopy (XPS) and ex situ X-ray absorption spectroscopy (XAS) reveal a conversion reaction mechanism during Li+ insertion into the NiAl LDH material. X-ray diffraction (XRD) and XPS have been combined with the electrochemical study to understand the effect of different cutoff potentials on the Li-ion storage mechanism. This work highlights the possibility of the direct application of NiAl LDH materials as negative electrodes for LIBs.


Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.


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