SiC Power Devices

1996 ◽  
Vol 423 ◽  
Author(s):  
T. P. Chow ◽  
M. Ghezzo
Keyword(s):  
Performance Improvement ◽  
High Voltage ◽  
Motor Drive ◽  
Power Devices ◽  
Process Technology ◽  
Power Switching ◽  
Power Transistors ◽  
Bipolar Devices ◽  
Drive Systems ◽  
The Impact

AbstractThe present status of SiC high-voltage power switching devices is reviewed. The figures of merits that have been used for unipolar and bipolar devices to quantify the intrinsic performance improvement over silicon are presented. Analytical and numerical modeling and simulations to estimate the BV and device choice are described. The active area and termination design of trenched-gate MOS power transistors, together with an integrated process for their fabrication, is presented. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for SiC device commercialization are discussed. Finally, the impact of SiC power devices on motor drive systems is estimated.

Wide Bandgap Semiconductor Power Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
T. P. Chow ◽  
N. Ramungul ◽  
M. Ghezzo
Keyword(s):  
High Voltage ◽  
Wide Bandgap ◽  
Power Device ◽  
Experimental Demonstration ◽  
Power Devices ◽  
Process Technology ◽  
Power Semiconductor ◽  
Wide Bandgap Semiconductor ◽  
Simulated Performance ◽  
Device Structures

AbstractThe present status of high-voltage power semiconductor switching devices is reviewed. The choice and design of device structures are presented. The simulated performance of the key devices in 4H-SiC is described. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for device commercialization are discussed.

4H-SIC Dmosfets for High Frequency Power Switching Applications

2003 ◽  
Vol 764 ◽  
Author(s):  
Sei-Hyung Ryu ◽  
Anant K. Agarwal ◽  
James Richmond ◽  
John W. Palmour
Keyword(s):  
High Voltage ◽  
High Speed ◽  
High Performance ◽  
High Frequency Power ◽  
Power Devices ◽  
Power Switching ◽  
High Speed Switching ◽  
Unipolar Devices ◽  
Very High ◽  
Frequency Power

AbstractVery high critical field, reasonable bulk electron mobility, and high thermal conductivity make 4H-Silicon carbide very attractive for high voltage power devices. These advantages make high performance unipolar switching devices with blocking voltages greater than 1 kV possible in 4H-SiC. Several exploratory devices, such as vertical MOSFETs and JFETs, have been reported in SiC. However, most of the previous works were focused on high voltage aspects of the devices, and the high speed switching aspects of the SiC unipolar devices were largely neglected. In this paper, we report on the static and dynamic characteristics of our 4H-SiC DMOSFETs. A simple model of the on-state characteristics of 4H-SiC DMOSFETs is also presented.

Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1449-1452 ◽  
Author(s):  
Yang Sui ◽  
Ginger G. Walden ◽  
Xiao Kun Wang ◽  
James A. Cooper
Keyword(s):  
High Voltage ◽  
Current Density ◽  
Drift Region ◽  
Power Devices ◽  
Power Switching ◽  
Design Considerations ◽  
Blocking Voltage ◽  
Switching Devices

We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.

SiC Bipolar Power Devices

MRS Bulletin ◽  
2005 ◽  
Vol 30 (4) ◽  
pp. 299-304 ◽  
Author(s):  
T. Paul Chow
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
High Voltage ◽  
High Power ◽  
Recent Progress ◽  
Future Trends ◽  
Market Demand ◽  
Power Devices ◽  
Power Switching ◽  
Schottky Rectifiers

AbstractThe successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.

Progress in High Voltage SiC and GaN Power Switching Devices

2014 ◽  
Vol 778-780 ◽  
pp. 1077-1082 ◽  
Author(s):  
T. Paul Chow
Keyword(s):  
Power Electronics ◽  
High Voltage ◽  
Present Status ◽  
Future Trend ◽  
Power Devices ◽  
Power Switching ◽  
Switching Devices

The present status of the development and commercialization of SiC and GaN power devices for power electronics applications is presented. The technology obstacles and needs as well as future trend in these power devices are also discussed.

The Impact on Asynchronous Motor during High Voltage Power Quick Switching Process

2011 ◽  
Vol 413 ◽  
pp. 70-73
Author(s):  
Xue Song Zhou ◽  
Jin Cheng Zhou ◽  
You Jie Ma
Keyword(s):  
High Voltage ◽  
Asynchronous Motor ◽  
Switching Process ◽  
Power Switching ◽  
The Core ◽  
Complex Power ◽  
Core Issue ◽  
Grid Operation ◽  
The Impact ◽  
Impulse Current

High-voltage power switching process will produce over-voltage and impulse current, it will bring a range of complex power system problems and when cutting and closing the high voltage the asynchronous motor will also produce over-voltage and impulse current. They have some impacts on the high voltage asynchronous motor, may result in equipment damage. So how to control the production of the impulse current and reduce the size of the impulse current are the core issue of the switching device. This paper highlighted the impact of over-voltage and current effects on the asynchronous motor, finally, this paper refer to the harm of the impulse disturbance and provide some methods of reducing the impulse current, so that has certain significance to people of the actual power grid operation.

Defect engineering in SiC technology for high-voltage power devices

2020 ◽  
Vol 13 (12) ◽  
pp. 120101
Author(s):  
Tsunenobu Kimoto ◽  
Heiji Watanabe
Keyword(s):  
High Voltage ◽  
Defect Engineering ◽  
Power Devices
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