Electron Field Emission From Diamond-Like Carbon

1996 ◽  
Vol 423 ◽  
Author(s):  
J Robertson ◽  
S R P Silva ◽  
G A J Amaratunga ◽  
W I Milne

AbstractThe low electron affinity of a-C:H is related to that of diamond surfaces and is studied using a chemical bonding model. The electron field emission from hydrogenated amorphous carbon (a-C:H) and nitrogen modified a-C:H showing low turn on fields are described. Nitrogen improves the field emission, apparently by raising the Fermi level.

2000 ◽  
Vol 621 ◽  
Author(s):  
John Robertson

ABSTRACTElectron field emission from diamond, diamond-like carbon, carbon nanotubes and nanostructured carbon is compared. It is found that in all practical cases that emission occurs from regions of positive electron affinity with a barrier of ∼5 eV and with considerable field enhancement. The field enhancement in nanotubes arises from their geometry. In diamond, the field enhancement occurs by depletion of grain boundary states. In diamond-like carbon we propose that it occurs by the presence of sp2-rich channels formed by the soft conditioning process.


1997 ◽  
Vol 468 ◽  
Author(s):  
D. P. Malta ◽  
G. G. Fountain ◽  
J. B. Posthill ◽  
T. P. Humphreys ◽  
C. Pettenkofer ◽  
...  

ABSTRACTAlN has been identified as a candidate material for cold cathode field emitters due to its purported negative electron affinity (NEA) surface. Recent studies by our group on AlN(0001) using angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and scanning electron microscopy (SEM) have indicated that AlN(0001) is a positive electron affinity surface. We have also investigated electron field emission behavior of AlN and pure Al films grown on Si. AlN and Al films were grown by molecular beam epitaxy (MBE) and transported via an ultra-high vacuum (UHV) integrated processing system (IPS) to an electron emission measurement system (EEMS). The reference Al film on Si showed characteristic Fowler-Nordheim behavior with a turn-on field of 120V/μm (defined at 10μA-cm-2) and ∼100μA-cm-2 emission at 140V/μm. The AlN film also showed Fowler-Nordheim behavior with a turn-on field of 60V/μm and ∼10mA-cm-2 at 100V/μm. Air exposure of the AlN film caused a shift in turn-on to 90V/μm and ∼0.1mA-cm-2 at 100V/μm. The I-V behavior of the AlN film is consistent with the ARUPS results on a different AlN sample - both indicating a positive electron affinity AlN surface.


2005 ◽  
Vol 86 (23) ◽  
pp. 232102 ◽  
Author(s):  
C. H. P. Poa ◽  
S. R. P. Silva ◽  
R. G. Lacerda ◽  
G. A. J. Amaratunga ◽  
W. I. Milne ◽  
...  

1999 ◽  
Vol 16 (2) ◽  
pp. 152-154 ◽  
Author(s):  
Dong-sheng Mao ◽  
Jun Zhao ◽  
Wei Li ◽  
Xi Wang ◽  
Xiang-huai Liu ◽  
...  

1998 ◽  
Vol 37 (Part 2, No. 5A) ◽  
pp. L547-L549 ◽  
Author(s):  
Yunjun Li ◽  
Ning Yao ◽  
Gang Zhao ◽  
Jintian He ◽  
Binglin Zhang ◽  
...  

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