The Influence of Hydrogen Plasma Passivation on Electrical and Optical Properties of Aigan Samples Grown on Sapphire

1996 ◽  
Vol 423 ◽  
Author(s):  
A. Y. Polyakov ◽  
M. Shin ◽  
S. J. Pearton ◽  
M. Skowronski ◽  
D. W. Greve ◽  
...  
Keyword(s):  
Optical Properties ◽  
Bond Strength ◽  
Electron Mobility ◽  
Hydrogen Plasma ◽  
Near Band Edge ◽  
Hydrogen Treatment ◽  
Hydrogen Passivation ◽  
Electrical And Optical Properties ◽  
Plasma Passivation ◽  
Positively Charged

AbstractHydrogen plasma passivation effects are studied for undoped AlGaN layers grown by MOCVD. Hydrogen treatment at 200°C for lh led to a substantial decrease in carrier concentration accompanied by an increase in electron mobility. The magnitude of the near-band edge absorption tails also dramatically decreased after hydrogen passivation. The effect is explained by pairing of negatively charged hydrogen acceptors with positively charged native donors commonly believed to be related to nitrogen vacancies. The bond strength in such hydrogen complexes increases as the composition of AlGaN moves towards AIN, as revealed by results of post hydrogenation annealing.

Hydrogen plasma treatment effects on electrical and optical properties ofn-ZnO

2003 ◽  
Vol 94 (1) ◽  
pp. 400-406 ◽  
Author(s):  
A. Y. Polyakov ◽  
N. B. Smirnov ◽  
A. V. Govorkov ◽  
K. Ip ◽  
M. E. Overberg ◽  
...  
Keyword(s):  
Optical Properties ◽  
Plasma Treatment ◽  
Treatment Effects ◽  
Hydrogen Plasma ◽  
Electrical And Optical Properties

Role of hydrogen plasma on electrical and optical properties of ZGO, ITO and IZO transparent and conductive coatings

2006 ◽  
Vol 511-512 ◽  
pp. 295-298 ◽  
Author(s):  
L. Raniero ◽  
I. Ferreira ◽  
A. Pimentel ◽  
A. Gonçalves ◽  
P. Canhola ◽  
...  
Keyword(s):  
Optical Properties ◽  
Hydrogen Plasma ◽  
Electrical And Optical Properties ◽  
Conductive Coatings

Electrical and Optical Properties of CVT-grown ZnO Crystals

2009 ◽  
Vol 1201 ◽  
Author(s):  
Koji Abe ◽  
Masanori Oiwa
Keyword(s):  
Optical Properties ◽  
Partial Pressure ◽  
Carrier Concentration ◽  
Chemical Vapor ◽  
Shallow Donor ◽  
Chemical Vapor Transport ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Electrical And Optical Properties ◽  
Deep Donor

AbstractEffects of H2O partial pressure on ZnO crystal growth by chemical vapor transport (CVT) have been investigated. The use of H2O causes the increase in growth rate of ZnO, indicating that H2O acts as a dominant oxygen source in ZnO growth by CVT. The use of H2O also improves structural, electrical, and optical properties of the CVT-grown ZnO crystals. A sharp X-ray rocking curve for the ZnO (0002) reflection was obtained, and the full width at half maximum value was 38 arcsec. Strong near band edge emission was observed in photoluminescence spectra at room temperature. Both carrier concentration and Hall mobility increased with partial pressure of H2O. The dependence of the carrier concentration on temperature indicates that there exist two donors in the CVT-grown ZnO crystals. The estimated ionization energy for the shallow donor was 35±5 meV and that for the deep donor was 115±5 meV.

Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In0.49Ga0.51P Grown on Si Substrate

2001 ◽  
Vol 40 (Part 2, No. 3A) ◽  
pp. L189-L191 ◽  
Author(s):  
Gang Wang ◽  
Kimiya Akahori ◽  
Tetsuo Soga ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Optical Properties ◽  
Hydrogen Plasma ◽  
Si Substrate ◽  
Electrical And Optical Properties
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