scholarly journals Electrical and Optical Properties of ZnO Irradiated with Hydrogen Plasma

2016 ◽  
Vol 41 (3) ◽  
pp. 273-277
Author(s):  
Koji Abe ◽  
Hiroki Hata
2003 ◽  
Vol 94 (1) ◽  
pp. 400-406 ◽  
Author(s):  
A. Y. Polyakov ◽  
N. B. Smirnov ◽  
A. V. Govorkov ◽  
K. Ip ◽  
M. E. Overberg ◽  
...  

2006 ◽  
Vol 511-512 ◽  
pp. 295-298 ◽  
Author(s):  
L. Raniero ◽  
I. Ferreira ◽  
A. Pimentel ◽  
A. Gonçalves ◽  
P. Canhola ◽  
...  

2001 ◽  
Vol 40 (Part 2, No. 3A) ◽  
pp. L189-L191 ◽  
Author(s):  
Gang Wang ◽  
Kimiya Akahori ◽  
Tetsuo Soga ◽  
Takashi Jimbo ◽  
Masayoshi Umeno

2006 ◽  
Vol 514-516 ◽  
pp. 63-67 ◽  
Author(s):  
Leandro Raniero ◽  
Alexandra Gonçalves ◽  
Ana Pimentel ◽  
Shibin Zhang ◽  
Isabel Ferreira ◽  
...  

In this work we studied the influence of the power density of hydrogen plasma on electrical and optical properties (Hall mobility, free carrier concentration, sheet resistance, optical transmittance and a.c. impedance) of indium zinc oxide films, aiming to determine their chemical stability. This is an important factor for the optimization of amorphous/nanocrystalline p-i-n hydrogenated silicon (a/nc-Si:H) solar cells, since they should remain chemically highly stable during the p layer deposition. To perform this work the transparent conductive oxide was exposed to hydrogen plasma at substrate temperature of 473 K, 87 Pa of pressure and 20 sccm of hydrogen flow. The results achieved show that IZO films were reduced for all plasma conditions used, which leads mainly to a decrease on films transmittance. For the lowest power density used in the first minute of plasma exposition the transmittance of the IZO films decreases about 29%.


1996 ◽  
Vol 423 ◽  
Author(s):  
A. Y. Polyakov ◽  
M. Shin ◽  
S. J. Pearton ◽  
M. Skowronski ◽  
D. W. Greve ◽  
...  

AbstractHydrogen plasma passivation effects are studied for undoped AlGaN layers grown by MOCVD. Hydrogen treatment at 200°C for lh led to a substantial decrease in carrier concentration accompanied by an increase in electron mobility. The magnitude of the near-band edge absorption tails also dramatically decreased after hydrogen passivation. The effect is explained by pairing of negatively charged hydrogen acceptors with positively charged native donors commonly believed to be related to nitrogen vacancies. The bond strength in such hydrogen complexes increases as the composition of AlGaN moves towards AIN, as revealed by results of post hydrogenation annealing.


1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe

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