High Temperature Gas Phases Reactions Of Trimethylgallium with Ammonia and Trimethylamine

1996 ◽  
Vol 423 ◽  
Author(s):  
A. Thon ◽  
S. A. Safvi ◽  
T. F. Kuech
Keyword(s):  
High Temperature ◽  
Gas Phase ◽  
Gas Phase Reactions ◽  
Gas Phases ◽  
Organic Vapor ◽  
Tube Reactor ◽  
Decomposition Processes ◽  
Metal Organic ◽  
Thermal Stability Of

AbstractThe use of trimethylgallium-trimethylamine (TMG:TMN) adduct as alternative cation precursor for MOVPE of GaN was studied by means of in-situ mass spectroscopy in an isothermal flow tube reactor. The temperature, pressure and reaction time were chosen to emulate the gas phase environment typical of the metal-organic vapor phase: epitaxy (MOVPE) of GaN. Dynamic changes in the mass spectra are reported for the gas phase reactions between trimethylgallium (TMG) and TMN in hydrogen (H2/D2) and ammonia (NH3/ND3) ambients. Evidence presented for the high temperature TMG:TMN adduct formation, followed by ethane elimination. The strength of the adduct bonding is comparable to that of TMG:NH3 and thus suppresses TMN displacement by ammonia. The thermal stability of TMG:TMN was found to be higher in ammonia ambient than it is in hydrogen. Kinetic parameters for some of the decomposition processes are given.

Preparation and Pyrolysis of Stereoisomeric Bromobicyclo[n.1.0]alkanes ( n = 6, 8 , 10)

1987 ◽  
Vol 42 (4) ◽  
pp. 489-494 ◽  
Author(s):  
Eckehard V. Dehmlow ◽  
Roland Kramer
Keyword(s):  
Thermal Stability ◽  
Gas Phase ◽  
Condensed Phase ◽  
Secondary Products ◽  
Gas Phase Reactions ◽  
Stereoselective Reduction ◽  
Derivatives Of ◽  
Thermal Stability Of

Abstract The title compounds la-3c were prepared by stereoselective reduction of the respective dibromides. Pyrolysis gave allylic bromides (8, 9, 11) as primary and dienes (10, 12) as secondary products. Product ratios were independent of the stereochemistry of the starting materials. No differences of the rearrangement rates of the stereoisomers were observed in gas phase reactions of the derivatives of bicyclo[6.1.0]- and bicyclo[8.1.0]alkanes. With the larger bicyclo[10.1.0] derivatives, however, distinct differences in the thermal stability of cis-trans-isomers4c/5c or 2c/3c were found in condensed phase.

AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

2011 ◽  
Vol 315 (1) ◽  
pp. 204-207 ◽  
Author(s):  
Kai Cheng ◽  
S. Degroote ◽  
M. Leys ◽  
F. Medjdoub ◽  
J. Derluyn ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Gas Phase and Surface Reactions in Mocvd of GaAs from Triethylgallium, Trimethylgallium, and Organometallic Arsenic Precursors

1988 ◽  
Vol 131 ◽  
Author(s):  
Thomas R. Omstead ◽  
Penny M. Van Sickle ◽  
Klavs F. Jensen
Keyword(s):  
Gas Phase ◽  
Low Temperatures ◽  
Surface Reactions ◽  
Rate Data ◽  
Gas Phase Reactions ◽  
Heated Zone ◽  
Model Predictions ◽  
First Time ◽  
Good Agreement

ABSTRACTThe growth of GaAs from triethylgallium (TEG) and trimethylgallium (TMG) with tertiarybutylarsine (tBAs), triethylarsenic (TEAs), and trimethylarsenic (TMAs), has been investigated by using a reactor equipped with a recording microbalance for in situ rate measurements. Rate data show that the growth with these precursors is dominated by the formation of adduct compounds in the gas lines, by adduct related parasitic gas phase reactions in the heated zone, and by the surface reactions. A model is proposed for the competition between deposition reactions and the parasitic gas phase reactions. Model predictions are in very good agreement with experimental data for all combinations of precursors except for TEG/TMAs where extensive gallium droplet formation is observed at low temperatures. Growth of reasonable quality GaAs with Hall mobilities of 7600 cm2/Vs at 77 K using TEG and tBAs is reported for the first time.

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