Study of the Zeeman Effect of Er3+ in GaAs:Er,O

1996 ◽  
Vol 422 ◽  
Author(s):  
Dieter Haase ◽  
Achim Dörnen ◽  
Kenichiro Takahei ◽  
Akihito Taguchi
Keyword(s):  
Photoluminescence Spectrum ◽  
Optical Transition ◽  
Zeeman Effect ◽  
Full Width ◽  
Half Maximum ◽  
Monoclinic Symmetry ◽  
Organic Vapor ◽  
Rhombic Symmetry ◽  
Metal Organic ◽  
Low Symmetry

AbstractWe analyze the Zeeman effect of the 4/13/2 → 4/15/2 transition of Er3+ in GaAs:Er,O grown by metal-organic vapor-phase epitaxy. The photoluminescence spectrum has been assigned previously to one specific Er-O complex. The dominant optical transition at 1538 nm (6499.5 cm−1), which shows a full width at half maximum of only 0.05 cm−1, has been investigated by high-resolution Zeeman spectroscopy. A highly anisotropic Zeeman pattern is found which indicates the low symmetry of the underlying complex. A detailed analysis shows that the defect has a predominant rhombic symmetry C2v,. Additionally, smaller contributions of a crystal field with a monoclinic symmetry Clh are found. The results provide further arguments that an ErO2 complex is the responsible center observed.

Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate

2013 ◽  
Vol 1493 ◽  
pp. 189-194 ◽  
Author(s):  
Kensuke Akiyama ◽  
Hiroshi Funakubo ◽  
Masaru Itakura
Keyword(s):  
Thin Layer ◽  
Epitaxial Growth ◽  
Photoluminescence Spectrum ◽  
Lattice Strain ◽  
Lattice Parameter ◽  
Silver Layer ◽  
Full Width ◽  
Half Maximum ◽  
High Quality ◽  
Rocking Curve

ABSTRACTHigh-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.

scholarly journals Cвойства полуполярного GaN, выращенного на подложке Si(100)

2019 ◽  
Vol 53 (7) ◽  
pp. 1006
Author(s):  
А.В. Соломникова ◽  
В.Н. Бессолов ◽  
Е.В. Коненкова ◽  
Т.А. Орлова ◽  
С.Н. Родин ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Full Width ◽  
Half Maximum ◽  
Diffraction Curve ◽  
Metal Organic ◽  
Nanostructured Si ◽  
Organic Chemical Vapor Deposition

AbstractSemipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with Si_ x N_ y nanostrips on top of nanostructures can yield, via metal-organic chemical-vapor deposition, GaN(10 $$\bar {1}$$ 2) layers. An additional SiC buffer layer makes it possible to obtain GaN(10 $$\bar {1}$$ 1) layers with a full-width at half-maximum of the diffraction-curve of ω_θ ≈ 35′ arcmin. It is found that the luminescence properties of the semipolar layers are mostly due to basal plane stacking faults BSF_ S -I_1, in contrast to polar layers in which these properties are mostly due to the recombination of excitons.

scholarly journals Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Tsung-Shine Ko ◽  
Der-Yuh Lin ◽  
You-Chi He ◽  
Chen-Chia Kao ◽  
Bo-Yuan Hu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Field Strength ◽  
Layer Thickness ◽  
Photoluminescence Spectrum ◽  
Layer Structure ◽  
Crystal Quality ◽  
Full Width ◽  
Half Maximum ◽  
Series Of Experiments ◽  
Layer I

The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 μm. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 μm i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 μm.I-Vmeasurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.

Measurement of the autoionization lifetime of the superexcited atomic sulfur S(3s23p3(2Do)4d) state using tunable vacuum ultraviolet (VUV) radiation

2004 ◽  
Vol 82 (6) ◽  
pp. 885-890 ◽  
Author(s):  
Jianhua Huang ◽  
Dadong Xu ◽  
Alexei Stuchebrukhov ◽  
William M Jackson
Keyword(s):  
Excited States ◽  
Vacuum Ultraviolet ◽  
Optical Transition ◽  
Theoretical Models ◽  
Excitation Wavelength ◽  
Full Width ◽  
Half Maximum ◽  
Continuum State ◽  
Velocity Imaging ◽  
193 Nm

A new method is described that combines a tunable coherent vacuum ultraviolet (VUV) radiation source and an ion velocity imaging apparatus to study the autoionization of superexcited sulfur atoms. The photolysis of CS2 at 193 nm is used to produce metastable sulfur atoms in the 1D2 state. The S(1D2) atom is then directly excited to the neutral superexcited state 3s23p3(2Do)4d (1Do2) at 11.317 eV with a tunable VUV photon at ~121.896 nm. This excited state then undergoes autoionization into the first ionization continuum state of S+(4So3/2) + e–, which is not directly accessible from the S(1D2) state through optical transition. By monitoring the S+ signal in the time-of-flight mass spectrometer while scanning the excitation wavelength, the line profile of the 3s23p34d 1Do2 ← 3s23p4 1D2 transition is recorded and found to have a full width at half maximum (FWHM) of 0.9 cm–1. This has been used to determine an autoionization lifetime of the neutral superexcited 3s23p34d 1Do2 state of 5.9 ps. The accurate measurement of the autoionization lifetime provides a benchmark for testing fundamental theoretical models of processes occurring in excited states of atoms. Key words: autoionization, atomic sulfur, vacuum ultraviolet (VUV), full width at half maximum (FWHM).

Microscopic Structure of Er-Related Optically Active Centers in Si

2003 ◽  
Vol 770 ◽  
Author(s):  
H. Przybylinska ◽  
N. Q. Vinh ◽  
B.A. Andreev ◽  
Z. F. Krasil'nik ◽  
T. Gregorkiewicz
Keyword(s):  
Ground State ◽  
Photoluminescence Spectrum ◽  
Zeeman Effect ◽  
Optically Active ◽  
Single Type ◽  
Active Centers ◽  
Mbe Growth ◽  
Spectral Components ◽  
Er Doped ◽  
Successful Observation

AbstractA successful observation and analysis of the Zeeman effect on the near 1.54 μm photoluminescence spectrum in Er-doped crystalline MBE-grown silicon are reported. A clearly resolved splitting of 5 major spectral components was observed in magnetic fields up to 5.5 T. Based on the analysis of the data the symmetry of the dominant optically active center was conclusively established as orthorhombic I (C2v), with g‼≈18.4 and g⊥≈0 in the ground state. The fact that g⊥≈0 explains why EPR detection of Er-related optically active centers in silicon may be difficult. Preferential generation of a single type of an optically active Er-related center in MBE growth confirmed in this study is essential for photonic applications of Si:Er.

scholarly journals Spectroscopic Studies of Laser-Based Far-Ultraviolet Plasma Light Source

2021 ◽  
Vol 11 (15) ◽  
pp. 6919
Author(s):  
Majid Masnavi ◽  
Martin Richardson
Keyword(s):  
Dense Plasma ◽  
Wavelength Region ◽  
Spectroscopic Studies ◽  
Radiation Hydrodynamics ◽  
Full Width ◽  
Half Maximum ◽  
Laser Plasmas ◽  
Series Of Experiments ◽  
Far Ultraviolet ◽  
Radiation Conversion

A series of experiments is described which were conducted to measure the absolute spectral irradiances of laser plasmas created from metal targets over the wavelength region of 123–164 nm by two separate 1.0 μm lasers, i.e., using 100 Hz, 10 ns, 2–20 kHz, 60–100 ns full-width-at-half-maximum pulses. A maximum radiation conversion efficiency of ≈ 3%/2πsr is measured over a wavelength region from ≈ 125 to 160 nm. A developed collisional-radiative solver and radiation-hydrodynamics simulations in comparison to the spectra detected by the Seya–Namioka-type monochromator reveal the strong broadband experimental radiations which mainly originate from bound–bound transitions of low-ionized charges superimposed on a strong continuum from a dense plasma with an electron temperature of less than 10 eV.

scholarly journals Time to peak and full width at half maximum in MR perfusion: valuable indicators for monitoring moyamoya patients after revascularization

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Adam Huang ◽  
Chung-Wei Lee ◽  
Hon-Man Liu
Keyword(s):  
Study Data ◽  
Unknown Etiology ◽  
Dynamic Susceptibility ◽  
Full Width ◽  
Half Maximum ◽  
Mr Perfusion ◽  
Dynamic Susceptibility Contrast ◽  
Time To Peak ◽  
Mr Perfusion Imaging ◽  
Outcome Monitoring

AbstractMoyamoya disease (MMD) is a chronic, steno-occlusive cerebrovascular disorder of unknown etiology. Surgical treatment is the only known effective method to restore blood flow to affected areas of the brain. However, there are lack of generally accepted noninvasive tools for therapeutic outcome monitoring. As dynamic susceptibility contrast (DSC) magnetic resonance imaging (MRI) is the standard MR perfusion imaging technique in the clinical setting, we investigated a dataset of nineteen pediatric MMD patients with one preoperational and multiple periodic DSC MRI examinations for four to thirty-eight months after indirect revascularization. A rigid gamma variate model was used to derive two nondeconvolution-based perfusion parameters: time to peak (TTP) and full width at half maximum (FWHM) for monitoring transitional bolus delay and dispersion changes respectively. TTP and FWHM values were normalized to the cerebellum. Here, we report that 74% (14/19) of patients improve in both TTP and FWHM measurements, and whereof 57% (8/14) improve more noticeably on FWHM. TTP is in good agreement with Tmax in estimating bolus delay. Our study data also suggest bolus dispersion estimated by FWHM is an additional, informative indicator in pediatric MMD monitoring.

Sign in / Sign up

Export Citation Format

Share Document