On the Investigation of Power and Reliability Performance of Pseudomorphic AlGaAs/InGaAs HEMT's

1996 ◽  
Vol 421 ◽  
Author(s):  
G.P. Li ◽  
Y.C. Chou ◽  
Y.C. Chen ◽  
C.S. Wu ◽  
K.K. Yu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Surface Passivation ◽  
Light Emission ◽  
Device Simulation ◽  
Emission Spectra ◽  
Gate Current ◽  
State Breakdown ◽  
Reliability Performance ◽  
Surface Leakage ◽  
The Impact

AbstractIn this work, power and reliability performance of pseudomorphic AIGaAs/InGaAs HEMT's are investigated by 2-D device simulation, spatially-resolved electro-luminescence, light emission spectra analysis, and gate current instabilities. A two-dimensional device simulation was used to exploit the off/on state breakdown origins in the power PHEMT's and to explore the physical mechanisms responsible for light emission in both conditions. A correlation between simulated results and light emission spectra highlights the breakdown origins in PHEMT's.PHEMT's subjected to off-state breakdown stress and on-state hot carrier stress show changes in device characteristics. While gate leakage current, i.e. a surface leakage component associated with the surface passivation layer is reduced by these stresses, a reduction in drain current, transconductance degradation, and an increase in the impact ionization generated gate current are also observed.Further improvement in off/on state breakdown voltages and device reliability calls for device structure optimization for lower electric field design, surface passivation treatment for lower surface leakage current, and Schottky barrier enhancement for lower gate current.

APPLICATION OF EPITAXIAL UNIPOLAR BARRIERS TO REDUCE NOISE CURRENTS IN PHOTODETECTORS

2011 ◽  
Vol 20 (03) ◽  
pp. 557-564
Author(s):  
G. R. SAVICH ◽  
J. R. PEDRAZZANI ◽  
S. MAIMON ◽  
G. W. WICKS
Keyword(s):  
Leakage Current ◽  
Surface Passivation ◽  
Leakage Currents ◽  
Type Region ◽  
Surface Leakage Current ◽  
Unipolar Barrier ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Tunneling Currents ◽  
Surface Leakage

Tunneling currents and surface leakage currents are both contributors to the overall dark current which limits many semiconductor devices. Surface leakage current is generally controlled by applying a post-epitaxial passivation layer; however, surface passivation is often expensive and ineffective. Band-to-band and trap assisted tunneling currents cannot be controlled through surface passivants, thus an alternative means of control is necessary. Unipolar barriers, when appropriately applied to standard electronic device structures, can reduce the effects of both surface leakage and tunneling currents more easily and cost effectively than other methods, including surface passivation. Unipolar barriers are applied to the p -type region of a conventional, MBE grown, InAs based pn junction structures resulting in a reduction of surface leakage current. Placing the unipolar barrier in the n -type region of the device, has the added benefit of reducing trap assisted tunneling current as well as surface leakage currents. Conventional, InAs pn junctions are shown to exhibit surface leakage current while unipolar barrier photodiodes show no detectable surface currents.

Influence of reaction parameters on the photoluminescence properties of free standing functionalized silicon nanocrystals

2010 ◽  
Vol 1260 ◽  
Author(s):  
Anoop Gupta ◽  
Hartmut Wiggers
Keyword(s):  
Optical Properties ◽  
Surface Functionalization ◽  
Silicon Nanocrystals ◽  
Organic Molecules ◽  
Surface Passivation ◽  
Light Emission ◽  
Emission Spectra ◽  
Surface Oxidation ◽  
Free Standing ◽  
The Stability

AbstractWhile silicon nanostructures acquire novel optical properties due to miniaturization, the stability of light emission is severely limited because of exciton trapping due to surface oxidation coming along with the formation of defects. Grafting of organic molecules on a hydrogen-terminated silicon surface via hydrosilylation provides a promising route to stabilize their surface against oxidation. In this communication, we report on the effect of surface passivation on the optical properties of freestanding silicon nanocrystals (Si-NCs). The surface functionalization of hydrogen-terminated Si-NCs with organic molecules was achieved via liquid phase hydrosilylation. We demonstrate that surface functionalization does not preserve the original emission of hydrogen-terminated Si-NCs. It is observed that the emission spectrum of green emitting hydrogen-terminated Si-NCs is red shifted after surface functionalization. We find that the direction of shift does not depend on the type of organic ligands and the reaction conditions, however, the amount of shift can be altered. The factors influencing the shift in the emission spectra of functionalized Si-NCs with respect to hydrogen-terminated samples are discussed.

scholarly journals Atomic and ionic light emission spectra of dipole transition and forbidden transition induced by the impact of 126Xe30+ on Ni solid surface

2004 ◽  
Vol 53 (10) ◽  
pp. 3341
Author(s):  
Zhang Xiao-An ◽  
Zhao Yong-Tao ◽  
Li Fu-Li ◽  
Yang Zhi-Hu ◽  
Xiao Guo-Qing ◽  
...  
Keyword(s):  
Solid Surface ◽  
Light Emission ◽  
Emission Spectra ◽  
Dipole Transition ◽  
Forbidden Transition ◽  
The Impact

VLSI Design for Functional Failure Analysis in the < 90 nm and Flip-Chip Era

2003 ◽  
Author(s):  
Yoav Weizman ◽  
Ezra Baruch
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Light Emission ◽  
Vlsi Design ◽  
Optical Resolution ◽  
Critical Issue ◽  
Acquisition Time ◽  
Resolution Limit ◽  
Design Rules ◽  
The Impact

Abstract In recent years, two new techniques were introduced for flip chip debug; the Laser Voltage Probing (LVP) technique and Time Resolved Light Emission Microscopy (TRLEM). Both techniques utilize the silicon’s relative transparency to wavelengths longer than the band gap. This inherent wavelength limitation, together with the shrinking dimensions of modern CMOS devices, limit the capabilities of these tools. It is known that the optical resolution limits of the LVP and TRLEM techniques are bounded by the diffraction limit which is ~1um for both tools using standard optics. This limitation was reduced with the addition of immersion lens optics. Nevertheless, even with this improvement, shrinking transistor geometry is leading to increased acquisition time, and the overlapping effect between adjacent nodes remains a critical issue. The resolution limit is an order of magnitude above the device feature densities in the &lt; 90nm era. The scaling down of transistor geometry is leading to the inevitable consequence where more than 50% of the transistors in 90nm process have widths smaller than 0.4um. The acquisition time of such nodes becomes unreasonably long. In order to examine nodes in a dense logic cuicuit, cross talk and convolution effects between neighboring signals also need to be considered. In this paper we will demonstrate the impact that these effects may have on modern design. In order to maintain the debug capability, with the currently available analytical tools for future technologies, conceptual modification of the FA process is required. This process should start on the IC design board where the VLSI designer should be familiar with FA constraints, and thus apply features that will enable enhanced FA capabilities to the circuit in hand during the electrical design or during the physical design stages. The necessity for reliable failure analysis in real-time should dictate that the designer of advanced VLSI blocks incorporates failure analysis constraints among other design rules. The purpose of this research is to supply the scientific basis for the optimal incorporation of design rules for optical probing in the &lt; 90nm gate era. Circuit designers are usually familiar with the nodes in the design which are critical for debug, and the type of measurement (logic or DC level) they require. The designer should enable the measurement of these signals by applying certain circuit and physical constraints. The implementation of these constraints may be done at the cell level, the block level or during the integration. We will discuss the solutions, which should be considered in order to mitigate tool limitations, and also to enable their use for next generation processes.

Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave inred detectors

2021 ◽  
pp. 3-8
Author(s):  
A.V. Voitsekhovskii ◽  
◽  
S.N. Nesmelov ◽  
S.M. Dzyadukh ◽  
S.A. Dvoretsky ◽  
...  
Keyword(s):  
Cadmium Telluride ◽  
Leakage Current ◽  
Current Density ◽  
Dark Current ◽  
Mercury Cadmium Telluride ◽  
Current Component ◽  
Long Wave ◽  
Dark Currents ◽  
Surface Leakage ◽  
Long Wave Infrared

Two types of long-wave infrared nBn structures based on mercury cadmium telluride grown by molecular beam epitaxy on GaAs (013) substrates have been fabricated. For each type of device, the side walls of the mesa structures were passivated with an Al2O3 dielectric film or left without passivation. The CdTe content in the absorbing layers was 0.20 and 0.21, and in the barrier layers, 0.61 and 0.63. The dark currents of the manufactured devices were studied in a wide range of voltages and temperatures. The values of the surface leakage component are found under various conditions. It has been shown that the surface leakage current density decreases upon passivation with an Al2O3 film. It was found that at room temperature in the fabricated nBn structures with reverse biases, the surface leakage component dominates, and with forward biases, the dark current is determined by the combined effect of the surface leakage component and the bulk current component. From the Arrhenius plots, the values of the activation energies of the surface leakage current component were found, which at small reverse biases are in the range from 0.05 to 0.10 eV. At small reverse biases, upon cooling the samples, the role of the bulk component of the dark current increases, which at 180 K is approximately 0.81 A/cm2. In the temperature range 200-300 K, the values of the dark current density exceed the values calculated according to the empirical Rule07 model by a factor of 10-100, which indicates the possibility of creating long-wave infrared barrier detectors with a decrease in the values of the surface leakage component.

scholarly journals Light Emission by Nanoporous GaN Produced by a Top-Down, Nonlithographical Nanopatterning

2018 ◽  
Vol 2018 ◽  
pp. 1-6
Author(s):  
E. Kheirandish ◽  
N. A. Kouklin ◽  
J. Liang
Keyword(s):  
Light Emission ◽  
Electronic Devices ◽  
Emission Spectra ◽  
Temperature Dependent ◽  
Physical Mechanisms ◽  
Spectral Shifts ◽  
Nanopore Arrays ◽  
Bulk Gan ◽  
Pl Emission ◽  
Temperature Dependent Photoluminescence

Temperature-dependent photoluminescence (PL) spectroscopy is carried out to probe radiative recombination and related light emission processes in two-dimensional periodic close-packed nanopore arrays in gallium nitride (np-GaN). The arrays were produced by nonlithographic nanopatterning of wurtzite GaN followed by a dry etching. The results of Raman spectroscopy point to a small relaxation of the compressive stress of ~0.24 GPa in nanoporous vs. bulk GaN. At ~300 K, the PL emission is induced by excitons and not free-carrier interband radiative recombinations. An evolution of the emission spectra with T is confirmed to be mainly a result of a decay of nonexcitonic PL emission and less of spectral shifts of the underlying PL bands. A switching of excitonic PL regime observed experimentally was analyzed within the exciton recombination-generation framework. The study provides new insights into the behaviors and physical mechanisms regulating light emission processes in np-GaN, critical to the development of nano-opto-electronic devices based on mesoscopic GaN.

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