The Impact of AlN Spacer on Forward Gate Current and Stress-Induced Leakage Current (SILC) of GaN HEMT

2016 ◽  
Author(s):  
Chung-hsu Chen ◽  
Dave Wang ◽  
Daniel Hou ◽  
Yuefei Yang ◽  
Wing Yau ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Current ◽  
Gan Hemt ◽  
Stress Induced Leakage Current ◽  
The Impact

On the Investigation of Power and Reliability Performance of Pseudomorphic AlGaAs/InGaAs HEMT's

1996 ◽  
Vol 421 ◽  
Author(s):  
G.P. Li ◽  
Y.C. Chou ◽  
Y.C. Chen ◽  
C.S. Wu ◽  
K.K. Yu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Surface Passivation ◽  
Light Emission ◽  
Device Simulation ◽  
Emission Spectra ◽  
Gate Current ◽  
State Breakdown ◽  
Reliability Performance ◽  
Surface Leakage ◽  
The Impact

AbstractIn this work, power and reliability performance of pseudomorphic AIGaAs/InGaAs HEMT's are investigated by 2-D device simulation, spatially-resolved electro-luminescence, light emission spectra analysis, and gate current instabilities. A two-dimensional device simulation was used to exploit the off/on state breakdown origins in the power PHEMT's and to explore the physical mechanisms responsible for light emission in both conditions. A correlation between simulated results and light emission spectra highlights the breakdown origins in PHEMT's.PHEMT's subjected to off-state breakdown stress and on-state hot carrier stress show changes in device characteristics. While gate leakage current, i.e. a surface leakage component associated with the surface passivation layer is reduced by these stresses, a reduction in drain current, transconductance degradation, and an increase in the impact ionization generated gate current are also observed.Further improvement in off/on state breakdown voltages and device reliability calls for device structure optimization for lower electric field design, surface passivation treatment for lower surface leakage current, and Schottky barrier enhancement for lower gate current.

Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress

2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky
Keyword(s):  
Leakage Current ◽  
Electrical Performance ◽  
Constant Current ◽  
Continuous Increase ◽  
Current Stress ◽  
Thermal Oxide ◽  
Stress Induced Leakage Current ◽  
Boron Penetration ◽  
Soft Breakdown ◽  
Induced Defects

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.

Study of the leakage current suppression for hybrid-Schottky/ohmic drain AlGaN/GaN HEMT

2015 ◽  
Vol 55 (2) ◽  
pp. 347-351 ◽  
Author(s):  
Cen Tang ◽  
Gang Xie ◽  
Kuang Sheng
Keyword(s):  
Leakage Current ◽  
Gan Hemt

Correlation between stress-induced leakage current and dielectric degradation in ultra-porous SiOCH low-k materials

2015 ◽  
Vol 118 (16) ◽  
pp. 164101 ◽  
Author(s):  
Y. Li ◽  
A. Leśniewska ◽  
O. Varela Pedreira ◽  
J.-F. de Marneffe ◽  
I. Ciofi ◽  
...  
Keyword(s):  
Leakage Current ◽  
Stress Induced Leakage Current ◽  
Low K ◽  
Dielectric Degradation

Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides

1999 ◽  
Vol 75 (5) ◽  
pp. 734-736 ◽  
Author(s):  
Nian-Kai Zous ◽  
Tahui Wang ◽  
Chih-Chich Yeh ◽  
C. W. Tsai ◽  
Chimoon Huang
Keyword(s):  
Leakage Current ◽  
Transient Effects ◽  
Oxide Charge ◽  
Stress Induced Leakage Current ◽  
Tunnel Oxides

Mechanism of stress induced leakage current in Si3N4

2019 ◽  
Vol 6 (7) ◽  
pp. 076401
Author(s):  
V A Gritsenko ◽  
A A Gismatulin ◽  
A P Baraban ◽  
A Сhin
Keyword(s):  
Leakage Current ◽  
Stress Induced Leakage Current
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