Properties of Substrate-Type a-Sihh Devices Prepared Using ECR Conditions

1996 ◽  
Vol 420 ◽  
Author(s):  
Vikram L. Dalal ◽  
Sanjeev Kaushal ◽  
Robert Girvan ◽  
Levent Sipahi ◽  
Swati Hariasra
Keyword(s):  
Stainless Steel ◽  
Quantum Efficiency ◽  
High Temperatures ◽  
Plasma Deposition ◽  
Type A ◽  
Substrate Type ◽  
Ecr Plasma ◽  
Hydrogen Dilution ◽  
Steel Substrates ◽  
Deposition Techniques

AbstractWe report on the preparation and properties of a-Si:H devices prepared at high temperatures on stainless steel substrates using low pressure ECR plasma deposition techniques. The devices were prepared using either Hydrogen or Helium as the plasma diluent gas. The use of He as the plasma gas led to films having significantly lower H concentration(4–5%) and a lower bandgap than comparable films made using hydrogen dilution. We find that we can make excellent devices, with good fill factors(over 70%) and voltages(over 0.86 V) using either H or He dilution. The use of He led to devices having smaller bandgap, by about 35–40 meV compared to devices made using H dilution. Detailed quantum efficiency measurements show that the hole collection in both types of devices is excellent, and that Urbach energies of tail states in each case is in the range of 43–45 meV.

Nanocrystalline Germanium and Germanium Carbide Films and Devices

2005 ◽  
Vol 862 ◽  
Author(s):  
Xuejun Niu ◽  
Jeremy Booher ◽  
Vikram L. Dalal
Keyword(s):  
Grain Size ◽  
Plasma Deposition ◽  
Open Circuit ◽  
Image Sensors ◽  
High Hydrogen ◽  
Strong Function ◽  
Germanium Carbide ◽  
Ecr Plasma ◽  
Hydrogen Dilution ◽  
Steel Substrates

AbstractNanocrystalline Ge and its alloys with C are potentially useful materials for solar cells, thin film transistors and image sensors. In this paper, we discuss the growth and properties of these materials using remote, low pressure ECR plasma deposition. The materials and devices were grown from mixtures of germane, methane and hydrogen. It was found that high hydrogen dilutions (>40:1) were needed to crystallize the films. Studies of x-ray spectra revealed that the grains were primarily <220> oriented. The grain size was a strong function of hydrogen dilution and growth temperature. Higher growth temperatures resulted in larger grain size. High hydrogen dilution tended to reduce grain size. These results can be explained by recognizing that excessive amounts of bonded H can inhibit the growth of <220> grain, which is the thermodynamically favorable direction for grain growth. Grain sizes as large as 80 nm were obtained in nc-Ge. Addition of C reduced the crystallinity. Mobility and carrier concentrations in nc-Ge were measured using Hall effect. Mobility values of ˜5cm2/V-sand carrier concentrations of ˜1x1016/cm3were obtained in larger grains. p+nn+ devices were fabricated on stainless steel substrates and compared with similar devices deposited in nc-Si:H. It was found that the voltage decreased and current increased in nc-Ge devices, in comparison with devices in nc-Si:H. Addition of C to Ge devices increased the open circuit voltage and shifted the quantum efficiency to larger photon energies, as expected.

scholarly journals Comparison Study of a-SiGe Solar Cells and Materials Deposited Using Different Hydrogen Dilution

2000 ◽  
Vol 609 ◽  
Author(s):  
H. Povolny ◽  
P. Agarwal ◽  
S. Han ◽  
X. Deng
Keyword(s):  
Stainless Steel ◽  
Solar Cells ◽  
Crystalline Silicon ◽  
Single Layer ◽  
Chemical Vapor ◽  
Hydrogen Dilution ◽  
Current Voltage ◽  
Ir Transmission ◽  
Cell Current ◽  
Steel Substrates

ABSTRACTA-SiGe n-i-p solar cells with i-layer deposited via plasma enhanced chemical vapor deposition (PECVD) with a germane to disilane ratio of 0.72 and hydrogen dilution R=(H2 flow)/(GeH4+Si2H6 flow) values of 1.7, 10, 30, 50, 120, 180 and 240 were deposited on stainless steel substrates. This germane to disilane ratio is what we typically use for the i-layer in the bottom cell of our standard triple-junction solar cells. Solar cell current-voltage curves (J-V) and quantum efficiency (QE) were measured for these devices. Light soaking tests were performed for these devices under 1 sun light intensity at 50° C. While device with R=30 showed the highest initial efficiency, the device with R=120 exhibit higher stabilized efficiency after 1000 hours of light soaking.Single-layer a-SiGe films (∼500 nm thick) were deposited under the same conditions as the i-layer of these devices on a variety of substrates including 7059 glass, crystalline silicon, and stainless steel for visible-IR transmission spectroscopy, FTIR, and hydrogen effusion studies. It is interesting to note 1) the H content in the film decreased with increasing R based on both the IR and H effusion measurements, and 2) while the H content changes significantly with different R, the change in Eg is relatively small. This is most likely due to a change in Ge content in the film for different R.

Study of Crystallinity in μc-Si:H Films Deposited by Cat-CVD for Thin Film Solar Cell Applications

2010 ◽  
Vol 1245 ◽  
Author(s):  
Cheng-Hang Hsu ◽  
Yi-Peng Hsu ◽  
Fang-Hong Yao ◽  
Yen-Tang Huang ◽  
Chuang-Chuang Tsai ◽  
...  
Keyword(s):  
Solar Cell ◽  
Plasma Deposition ◽  
Critical Role ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Solar Cell Efficiency ◽  
Coated Glass ◽  
Cell Efficiency ◽  
Hydrogen Dilution ◽  
Deposition Techniques

AbstractThe crystallinity of the hydrogenated microcrystalline silicon (μc-Si:H) film was known to influence the solar cell efficiency greatly. Also hydrogen was found to play a critical role in controlling the crystallinity. Instead of employing conventional plasma deposition techniques, this work focused on using catalytic chemical vapor deposition (Cat-CVD) to study the effect of hydrogen dilution and the filament-to-substrate distance on the crystallinity, deposition rate, microstructure factor and electrical property of the μc-Si:H film. We found that the substrate material and structure can affect the crystallinity of the μc-Si:H film and the incubation effect. Comparing bare glass, TCO-coated glass, a-Si:H-coated glass and μc-Si:H-coated glass, the microcrystalline phase grows the fastest onto μc-Si:H surface, but the slowest onto a-Si:H surface. Surprisingly, the template effect lasted for more than a thousand atomic layers of silicon.

Properties of Nanocrystalline Germanium-Carbon Films and Devices

2003 ◽  
Vol 762 ◽  
Author(s):  
X.J. Niu ◽  
Vikram L. Dalal ◽  
Max Noack
Keyword(s):  
Crystal Structure ◽  
Plasma Deposition ◽  
Amorphous Material ◽  
Carbon Films ◽  
Open Circuit ◽  
Base Layer ◽  
Photovoltaic Properties ◽  
Ecr Plasma ◽  
Hydrogen Dilution ◽  
N Doping

AbstractNanocrystalline Germanium-Carbon alloys, denoted by nc- (Ge,C):H, are a potentially useful new electronic material whose bandgap can be varied by changing the Ge:C ratios. We have shown previously that nanocrystalline (Ge,C):H films can be grown using remote ECR plasma deposition. In this paper, we report on the crystal structure, electron mobility and some device related properties of these materials. The materials were grown using mixtures of either Germane and methane, with significant hydrogen dilution, or from mixtures of ethylene and germane, also with significant hydrogen dilution. X-ray diffraction measurements indicated a predominantly <111> crystal structure. The grain size was in the range of 10 nm. Raman measurements clearly show the 300 cm-1 Ge peak in the films. Electron Hall mobilities were measured in these films and were found to be in the range of 2.5-3 cm2/V-sec. Proof-of-concept p+nn+ junction devices were fabricated and showed distinct photovoltaic properties. The open circuit voltage was found to be a strong function of the itnerfaces between n+ and n layers, and between p+ and n layers. The use of an amorphous n+/n interface at the back of the improved the device performance significantly. Capacitance measurements indicated that the device behaved according to standard p/n junction theory, with the n- doping in the base layer being in the 1017/cm3 range. Thus, the base layer was not intrinsic, but rather n type, as may be expected for a crystalline as opposed to amorphous material. Quantum efficiency data indicated that as C was added to the material, the edge of the QE curve shifted to higher photon energies, indicating larger bandgaps.

Defect Densities, Diffusion Lengths and Device Physics in Nanocrystalline Si:H Solar Cells

2004 ◽  
Vol 808 ◽  
Author(s):  
Vikram L. Dalal ◽  
Puneet Sharma ◽  
David Staab ◽  
Max Noack ◽  
Keqin Han
Keyword(s):  
Solar Cells ◽  
Quantum Efficiency ◽  
Diffusion Length ◽  
Deep Level ◽  
Plasma Deposition ◽  
Solar Spectrum ◽  
Base Layer ◽  
Degree Of Crystallinity ◽  
High Hydrogen ◽  
Ecr Plasma

ABSTRACTWe report on the properties of nanocrystalline Si:H solar cells. The solar cells were of the p+nn+ type, with the n+ layer deposited first on a stainless steel substrates. The solar cells were prepared under high hydrogen dilution conditions using either ECR plasma deposition, or VHF diode plasma deposition processes. The deposition pressures were kept low, 5 mTorr in the ECR reactor and 50 mTorr in the VHF reactor. All the solar cells reported showed a high Raman ratio of crystalline to amorphous peaks. Properties such as dark current, deep level defects and shallow doping densities, and hole diffusion lengths were measured in these cells. It was found that the base layer was always n type, but that its doping could be changed by adding ppm levels of B during growth. A sufficient B doping even type converted the base layer to p type. It was found that there was a good one-to-one correlation between the shallow doping and deep level defects, suggesting that the same element, probably oxygen, is responsible for generating both shallow dopants and deep levels. The diffusion length of holes was measured in these cells using quantum efficiency vs. voltage techniques, and it was found that the diffusion length data could be explained very well by invoking trap-controlled recombination statistics. The dark I(V) curves could be represented by a standard diode model for highly crystalline materials, but as the degree of crystallinity was reduced, the diode factor increased. Voltage could be improved by reducing the crystallinity of the layer, but doing so resulted in a decrease in quantum efficiency in the infrared regions of the solar spectrum.

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

AK STEEL 410S

Alloy Digest ◽  
2006 ◽  
Vol 55 (5) ◽  
Keyword(s):  
Stainless Steel ◽  
Corrosion Resistance ◽  
Physical Properties ◽  
Tensile Properties ◽  
Ferritic Stainless Steel ◽  
High Temperatures ◽  
Heat Treating ◽  
Austenite Formation ◽  
Oxidation Resistant

Abstract AK Steel 410S is a fully ferritic stainless steel with elements added to retard austenite formation at high temperatures. The resulting low hardening allows for use as oxidation-resistant parts. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on corrosion resistance as well as forming, heat treating, and joining. Filing Code: SS-964. Producer or source: AK Steel.

scholarly journals Atmospheric Pressure Plasma Deposition of TiO2: A Review

Materials ◽  
2020 ◽  
Vol 13 (13) ◽  
pp. 2931
Author(s):  
Soumya Banerjee ◽  
Ek Adhikari ◽  
Pitambar Sapkota ◽  
Amal Sebastian ◽  
Sylwia Ptasinska
Keyword(s):  
Atmospheric Pressure ◽  
Gas Flow ◽  
Plasma Deposition ◽  
Atmospheric Pressure Plasma ◽  
Cost Savings ◽  
Historical Background ◽  
Pressure Plasma ◽  
Wide Range ◽  
The Status ◽  
Deposition Techniques

Atmospheric pressure plasma (APP) deposition techniques are useful today because of their simplicity and their time and cost savings, particularly for growth of oxide films. Among the oxide materials, titanium dioxide (TiO2) has a wide range of applications in electronics, solar cells, and photocatalysis, which has made it an extremely popular research topic for decades. Here, we provide an overview of non-thermal APP deposition techniques for TiO2 thin film, some historical background, and some very recent findings and developments. First, we define non-thermal plasma, and then we describe the advantages of APP deposition. In addition, we explain the importance of TiO2 and then describe briefly the three deposition techniques used to date. We also compare the structural, electronic, and optical properties of TiO2 films deposited by different APP methods. Lastly, we examine the status of current research related to the effects of such deposition parameters as plasma power, feed gas, bias voltage, gas flow rate, and substrate temperature on the deposition rate, crystal phase, and other film properties. The examples given cover the most common APP deposition techniques for TiO2 growth to understand their advantages for specific applications. In addition, we discuss the important challenges that APP deposition is facing in this rapidly growing field.

Sign in / Sign up

Export Citation Format

Share Document