Comparative Study on Three Types of Ordered Structures (TP-A, CuPt-A, CuPt-B) in AlInAs, GaInAs, AIInP, and GaInP – Bonding Energy Difference Effects.

1995 ◽  
Vol 417 ◽  
Author(s):  
A. Gomyo ◽  
T. Suzuki ◽  
K. Makita ◽  
M. Sumino ◽  
I. Hino
Keyword(s):  
Molecular Beam Epitaxy ◽  
Comparative Study ◽  
Molecular Beam ◽  
Energy Difference ◽  
Bonding Energy ◽  
Ordered Structure ◽  
Type Alloy ◽  
Ordered Structures ◽  
Group Iii ◽  
Gas Source

AbstractComparative study on the formation of the three types of ordered structures (TP-A,CuPt-A, and CuPt-B) on group III sublattice in III-III-V type alloys are made for four kinds of alloys of AlInAs, GaInAs, AlInP, and GaInP grown by gas source molecular beam epitaxy. The bonding energy difference between the constituent binaries of a IIIA - IIIB-V type alloy is demonstrated to be an important factor for the ordered structure formation. The implications of the result for the formation mechanism is discussed.

Study of As and P Incorporation Behavior in GaAsP by Gas-Source Molecular-Beam Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Ex Situ ◽  
Limited Growth ◽  
Group V ◽  
Group Iii ◽  
Gas Source ◽  
Simple Kinetic Model

ABSTRACTA simple kinetic model has been developed to explain the agreement between in situ and ex situ determination of phosphorus composition in GaAs1−xPx (x < 0.4) epilayers grown on GaAs (001) by gas-source molecular-beam epitaxy (GSMBE). The in situ determination is by monitoring the intensity oscillations of reflection high-energy-electron diffraction during group-V-limited growth, and the ex situ determination is by x-ray rocking curve measurement of GaAs1−xPx/GaAs strained-layer superlattices grown under group-III-limited growth condition.

Group III-Nitride materials growth using gas source molecular beam epitaxy

1997 ◽  
Author(s):  
W. T. Taferner ◽  
E. Kim ◽  
A. Bensaoula ◽  
K. Waters ◽  
A. Schultz
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii ◽  
Gas Source ◽  
Group Iii Nitride

Comparative study of molecular beam injection systems for gas source molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 986-989 ◽  
Author(s):  
D.A. Scheinowitz ◽  
J. Trommel ◽  
K. Werner ◽  
S. Radelaar ◽  
P. Balk
Keyword(s):  
Molecular Beam Epitaxy ◽  
Comparative Study ◽  
Molecular Beam ◽  
Beam Injection ◽  
Gas Source

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Optical properties of InAs/AlSb superlattices grown by gas source molecular beam epitaxy

1994 ◽  
Vol 136 (1-4) ◽  
pp. 310-314 ◽  
Author(s):  
S.G. Kim ◽  
H. Asahi ◽  
M. Seta ◽  
K. Asami ◽  
S. Gonda ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source

Single-crystalline BaTiO3films grown by gas-source molecular beam epitaxy

2014 ◽  
Vol 7 (12) ◽  
pp. 125502 ◽  
Author(s):  
Yuya Matsubara ◽  
Kei S. Takahashi ◽  
Yoshinori Tokura ◽  
Masashi Kawasaki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Gas Source
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