Group III-Nitride materials growth using gas source molecular beam epitaxy

1997 ◽  
Author(s):  
W. T. Taferner ◽  
E. Kim ◽  
A. Bensaoula ◽  
K. Waters ◽  
A. Schultz
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii ◽  
Gas Source ◽  
Group Iii Nitride

Study of As and P Incorporation Behavior in GaAsP by Gas-Source Molecular-Beam Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Ex Situ ◽  
Limited Growth ◽  
Group V ◽  
Group Iii ◽  
Gas Source ◽  
Simple Kinetic Model

ABSTRACTA simple kinetic model has been developed to explain the agreement between in situ and ex situ determination of phosphorus composition in GaAs1−xPx (x < 0.4) epilayers grown on GaAs (001) by gas-source molecular-beam epitaxy (GSMBE). The in situ determination is by monitoring the intensity oscillations of reflection high-energy-electron diffraction during group-V-limited growth, and the ex situ determination is by x-ray rocking curve measurement of GaAs1−xPx/GaAs strained-layer superlattices grown under group-III-limited growth condition.

Nitrogen incorporation in group III–nitride–arsenide materials grown by elemental source molecular beam epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 506-515 ◽  
Author(s):  
S.G Spruytte ◽  
M.C Larson ◽  
W Wampler ◽  
C.W Coldren ◽  
H.E Petersen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii ◽  
Nitrogen Incorporation ◽  
Group Iii Nitride

Comparative Study on Three Types of Ordered Structures (TP-A, CuPt-A, CuPt-B) in AlInAs, GaInAs, AIInP, and GaInP – Bonding Energy Difference Effects.

1995 ◽  
Vol 417 ◽  
Author(s):  
A. Gomyo ◽  
T. Suzuki ◽  
K. Makita ◽  
M. Sumino ◽  
I. Hino
Keyword(s):  
Molecular Beam Epitaxy ◽  
Comparative Study ◽  
Molecular Beam ◽  
Energy Difference ◽  
Bonding Energy ◽  
Ordered Structure ◽  
Type Alloy ◽  
Ordered Structures ◽  
Group Iii ◽  
Gas Source

AbstractComparative study on the formation of the three types of ordered structures (TP-A,CuPt-A, and CuPt-B) on group III sublattice in III-III-V type alloys are made for four kinds of alloys of AlInAs, GaInAs, AlInP, and GaInP grown by gas source molecular beam epitaxy. The bonding energy difference between the constituent binaries of a IIIA - IIIB-V type alloy is demonstrated to be an important factor for the ordered structure formation. The implications of the result for the formation mechanism is discussed.

scholarly journals Some Properties of Group-III Nitride Thin Films Directly Grown on Non-Single-Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus

2015 ◽  
Vol 06 (09) ◽  
pp. 1289-1297
Author(s):  
Yuichi Sato ◽  
Shota Ishizaki ◽  
Yoshifumi Murakami ◽  
Mohamad Idham ◽  
Nur Ain ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Group Iii ◽  
Group Iii Nitride

Group-III nitride quantum heterostructures grown by molecular beam epitaxy

2001 ◽  
Vol 13 (32) ◽  
pp. 6945-6960 ◽  
Author(s):  
Nicolas Grandjean ◽  
Benjamin Damilano ◽  
Jean Massies
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii ◽  
Group Iii Nitride ◽  
Quantum Heterostructures

Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy

1996 ◽  
Vol 1 ◽  
Author(s):  
M. V. Averyanova ◽  
S. Yu. Karpov ◽  
Yu. N. Makarov ◽  
I. N. Przhevalskii ◽  
M. S. Ramm ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Nitrogen ◽  
Group Iii Nitrides ◽  
Desorption Kinetics ◽  
Evaporation Coefficient ◽  
Group Iii ◽  
Dependent Growth ◽  
Group Iii Nitride

A theoretical model which accounts for a physisorption precursor of molecular nitrogen is proposed for the analysis of group III-nitride growth by molecular beam epitaxy (MBE). The kinetics of nitrogen evaporation are found to be an essential factor influencing the MBE growth process of group III-nitrides. The high thermal stability of nitrides is explained to be related to the desorption kinetics resulting in a low value of the evaporation coefficient. The values of the evaporation coefficients as functions of temperature are extracted from the experimental Langmuir evaporation data of GaN and AlN. Using the revised thermodynamic properties of the group III-nitrides, and the obtained values of the evaporation coefficient, the process parameter dependent growth rate and transition to extra liquid phase formation during the GaN MBE are calculated. The theoretical results are compared to the available experimental data.

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