Semiconductor Superlattices Studied by Grazing X-ray Scattering and Diffraction

1995 ◽  
Vol 417 ◽  
Author(s):  
Z. H. Ming ◽  
Y. L. Soo ◽  
S Huang ◽  
Y. H. Kao ◽  
K. Stair ◽  
...  
Keyword(s):  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Semiconductor Superlattices ◽  
Interface Quality ◽  
Structural Ordering ◽  
X Ray ◽  
X Ray Scattering ◽  
Growth Method ◽  
Ray Scattering

Semiconductor superlattices have been studied by grazing incidence x-ray scattering and x-ray diffraction. For superlattices of 100-period InGaAs/GaAs, lateral structural ordering has been found to occur in the material. For one particular sample (M1400), periodic thickness modulations have been observed in the InGaAs layers. X-ray results also provide evidence for an improvement of interface quality by using interrupt-growth method for 55-period AlAs/GaAs superlattices grown by MBE.

scholarly journals Operando Grazing Incidence Small-Angle X-ray Scattering/X-ray Diffraction of Model Ordered Mesoporous Lithium-Ion Battery Anodes

ACS Nano ◽  
2017 ◽  
Vol 11 (2) ◽  
pp. 1443-1454 ◽  
Author(s):  
Sarang M. Bhaway ◽  
Zhe Qiang ◽  
Yanfeng Xia ◽  
Xuhui Xia ◽  
Byeongdu Lee ◽  
...  
Keyword(s):  
Lithium Ion Battery ◽  
Small Angle ◽  
Lithium Ion ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
X Ray Scattering ◽  
Ordered Mesoporous ◽  
Ray Scattering

Growth temperature effect on the structure of CoPt islands on NaCl(001) studied by grazing-incidence small-angle X-ray scattering

2013 ◽  
Vol 47 (1) ◽  
pp. 102-109 ◽  
Author(s):  
Mireille Maret ◽  
Fabiola Liscio ◽  
Denys Makarov ◽  
Béatrice Doisneau-Cottignies ◽  
Fabian Ganss ◽  
...  
Keyword(s):  
Small Angle ◽  
Deposition Temperature ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Truncated Octahedron ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
The Difference ◽  
Ray Scattering

The structure (size, shape, orientation) of CoPt alloy islands formed on NaCl(001) substrates was investigated using grazing-incidence small-angle X-ray scattering (GISAXS) combined with electron and X-ray diffraction and transmission electron microscopy. Co50Pt50and Co25Pt75islands formed at 473 K by co-deposition of Co and Pt species are oriented along the [001] direction, and their shapes are well described as truncated spheres with lateral sizes of around 4–5 nm. In contrast, using the same Co and Pt atomic fluxes, co-deposition at 673 K leads to the formation of strongly enriched Pt islands with larger sizes, and different orientations and shapes. The Pt enrichment is attributed to a large increase in the difference between the Co and Pt condensation coefficients with deposition temperature. Surprisingly, for the island assemblies formed at 673 K, the GISAXS patterns are dominated by the scattered intensities of the [001]-oriented islands with a truncated octahedron shape, thus masking the contributions of the [111]- and [110]-oriented islands which can exhibit larger sizes.

scholarly journals TheIn situgrowth of Nanostructures on Surfaces (INS) endstation of the ESRF BM32 beamline: a combined UHV–CVD and MBE reactor forin situX-ray scattering investigations of growing nanoparticles and semiconductor nanowires

2015 ◽  
Vol 22 (3) ◽  
pp. 688-700 ◽  
Author(s):  
V. Cantelli ◽  
O. Geaymond ◽  
O. Ulrich ◽  
T. Zhou ◽  
N. Blanc ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Grazing Incidence ◽  
High Energy ◽  
Semiconductor Nanowires ◽  
Gas Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

This paper presents the upgraded `In situ growth of Nanoscructures on Surfaces' (INS) endstation of the InterFace beamline IF-BM32 at the European Synchrotron Radiation Facility (ESRF). This instrument, originally designed to investigate the structure of clean surfaces/interfaces/thin-films by surface X-ray diffraction, has been further developed to investigate the formation and evolution of nanostructures by combining small- and wide-angle X-ray scattering methodologies,i.e.grazing-incidence small-angle X-ray scattering (GISAXS) and grazing-incidence X-ray diffraction (GIXD). It consists of a UHV chamber mounted on az-axis type goniometer, equipped with residual gas analysis, reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES) to complete the X-ray scattering investigations. The chamber has been developed so as up to eight sources of molecular beam epitaxy (MBE) can be simultaneously mounted to elaborate the nanostructures. A chemical vapor deposition (CVD) set-up has been added to expand the range of growing possibilities, in particular to investigatein situthe growth of semiconductor nanowires. This setup is presented in some detail, as well as the firstin situX-ray scattering measurements during the growth of silicon nanowires.

scholarly journals Grazing-incidence X-ray diffraction tomography for characterizing organic thin films

2021 ◽  
Vol 54 (5) ◽  
Author(s):  
Esther H. R. Tsai ◽  
Yu Xia ◽  
Masafumi Fukuto ◽  
Yueh-Lin Loo ◽  
Ruipeng Li
Keyword(s):  
Thin Films ◽  
Organic Thin Films ◽  
Grazing Incidence ◽  
Computational Method ◽  
Diffraction Tomography ◽  
Structure Property ◽  
X Ray Diffraction ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Characterization of thin films is of paramount importance for evaluating material processing outcomes/efficiency as well as establishing structure–property/performance relationships. This article introduces grazing-incidence diffraction tomography (GID tomography), a technique that combines grazing-incidence X-ray scattering and computed tomography to quantitatively determine the dimension and orientation of crystalline domains in thin films without restrictions on the beam coherence, substrate type or film thickness. This computational method extends the capability of synchrotron beamlines by utilizing standard X-ray scattering experiment setups.

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