Development of Epitaxial, Tiling, and Cutting Processes for a Diamond Single Crystal Wafer Technology

1995 ◽  
Vol 416 ◽  
Author(s):  
J. B. Posthill ◽  
D. P. Malta ◽  
T. P. Humphreys ◽  
G. C. Hudson ◽  
R. E. Thomas ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electrochemical Etching ◽  
Deposition Process ◽  
Diamond Growth ◽  
Diamond Single Crystal ◽  
Large Area ◽  
Free Standing ◽  
Specific Sequence ◽  
Single Crystal Diamond ◽  
Close Proximity

ABSTRACTDevelopment of a diamond homoepitaxial deposition process that utilizes water and-ethanol at a growth temperature of ∼600°C is described. Topographies are excellent, and etch-pit densities (EPD) are in the 106 cm-2 range when growth is done on type Ia C(100) substrates.-This process has been used to epitaxially join diamond single crystals that were bonded in close-proximity to each other. This process of “tiling” single crystal diamonds in close proximity in-order to manufacture a large-area diamond single crystal template is also described. Specially-prepared diamonds that have had their faces and edges oriented to { 100} were coated with-heteroepitaxial Ni, then pressed onto a Si wafer while being heated in an inert gas atmosphere.-The resulting bond is excellent; thereby permitting our 600°C diamond deposition process to-epitaxially join the diamonds. A diamond wafer cutting technology has been addressed using a-specific sequence consisting of: ion implantation, homoepitaxial diamond growth, annealing, and-contactless electrochemical etching. This “lift-off” method of cutting has thus far resulted in a 2mm×O.5mm×17.5μm transparent, synthetic, free-standing, single crystal diamond plate being-fabricated. Raman spectroscopy and EPD show the plate to be comparable to our best-homoepitaxial diamond.

Fabrication of a Free-Standing, Synthetic, Single Crystal Diamond Plate Using Ion Implantation and Plasma-Enhanced Chemical Vapor Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
J.B. Posthill ◽  
D.P. Malta ◽  
T.P. Humphreys ◽  
G.C. Hudson ◽  
R.E. Thomas ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electrochemical Etching ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Diamond Growth ◽  
Free Standing ◽  
Diamond Plate ◽  
Single Crystal Diamond ◽  
Type Ia ◽  
Lift Off

AbstractUsing a specific combination of energetic and chemical processes we have grown homoepitaxial diamond on and lifted it off of a type Ia natural C(100) crystal. Before growth, the C(100) crystal is exposed to a self implant of 190keV energy and dose of 1E16 cm-2. Low temperature (~600°C) homoepitaxial diamond growth conditions were used that are based on water-alcohol source chemistries. To achieve layer separation (lift-off), samples were annealed to a temperature sufficient to graphitize the buried implant-damaged region. Contactless electrochemical etching was found to remove the graphite, and a transparent synthetic (100) single crystal diamond plate of 17.5μm thickness was lifted off. This free-standing diamond single crystal plate was characterized and found to be comparable to homoepitaxial films grown on unimplanted single crystal diamond.

Towards Large Area Diamond Substrates: The Mosaic Process

1995 ◽  
Vol 416 ◽  
Author(s):  
Ger Janssen ◽  
John J. Schermer ◽  
L. J. Giling
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
Diamond Growth ◽  
Large Area ◽  
Severe Problem ◽  
Step Process ◽  
Seed Crystals ◽  
Combustion Flame ◽  
Single Crystal Diamond ◽  
Hot Filament

ABSTRACTA method has been developed for producing large area single-crystal diamond plates, suitable for optical and electronic applications. It starts with orienting and closely packing a set of diamond seed crystals with (001) top faces. This assembly, or mosaic, is then joined by a single-crystal overgrowth using a CVD process. A number of assembling techniques have been tested for compatibility with homoepitaxial diamond growth by hot filament assisted CVD and/or growth and etching by the acetylene-oxygen combustion flame. Furthermore a two-step process is described. First an initial layer (20-50/μm) is deposited by hot filament assisted CVD at a low growth rate in order to bridge the gap between the seeds. Subsequently the fast growth rate of the acetylene-oxygen combustion flame is employed to increase the layer thickness (>250,μm). It was found that both the basic mosaic process as well as the two step process can produce a single-crystal diamond layer on top of mosaics consisting of seed crystals with well aligned crystallographic directions. The width of the gaps between the seed crystals (up to 25 μm) was found to be less critical, while the orientation of the side faces and the direction of the misorientation (i.e. the step flow direction) seem not to effect the successful overgrowth. Apart from the alignment of the seed crystals the most severe problem, which has to be overcome in order to obtain one single-crystal overgrowth, is the occurrence of penetration twins in the joint regions. The largest mosaic structure -up to now- overgrown by CVD consists of seven seed crystals and has a surface area slightly in excess of 1 cm2

scholarly journals Shape-Controlled, Single-Crystal Gold Surface Nanostructures

2019 ◽  
Author(s):  
Sasan V. Grayli ◽  
Xin Zhang ◽  
Dmitry Star ◽  
Gary Leach
Keyword(s):  
Single Crystal ◽  
Electroless Deposition ◽  
Near Field ◽  
Critical Role ◽  
Deposition Process ◽  
Local Fields ◽  
Metal Nanostructures ◽  
Large Area ◽  
Device Applications ◽  
Shape Controlled

Size, shape and crystallinity play a critical role in the wavelength-dependent optical responses and plasmonic local near-field distributions of metallic nanostructures. While their enhanced local fields can drive new and useful chemical and physical processes, the ability to fabricate shape-controlled single-crystal metal nanostructures and position them precisely on substrates for device applications represents a significant barrier to harnessing their greater potential. Here, we describe a novel electroless deposition process in the presence of anionic additives that yields additive-specific, shape-controlled, single-crystal plasmonic Au nanostructures on Ag(100) and Au(100) substrates. Deposition of Au in the presence of SO<sub>4</sub><sup>2-</sup> ions results in the formation of smooth Au(111)-faceted square pyramids that show large surface enhanced Raman responses. The use of halide additives such as Cl<sup>-</sup> and Br<sup>- </sup>that interact strongly with (100) facets produces highly textured hillock-type structures characterized by edge and screw-type dislocations (Cl<sup>-</sup>), or flat platelet-like features characterized by large area Au(100) terraces with (110) step edges (Br<sup>-</sup>). Use of additive combinations provides structures that comprise characteristics derived from each additive including new square pyramidal structures with dominant Au(110) facets (SO<sub>4</sub><sup>2-</sup>and Br<sup>-</sup>). Finally we demonstrate that this bottom-up electroless deposition process, when combined with top-down lithographic patterning methods, can be used to position shape-controlled, single-crystal Au nanostructures with precise location and orientation on surfaces. We anticipate that this approach will be employed as a powerful new tool to tune the plasmonic characteristics of nanostructures and facilitate their broader integration into device applications.

scholarly journals Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5964
Author(s):  
Guoqing Shao ◽  
Juan Wang ◽  
Shumiao Zhang ◽  
Yanfeng Wang ◽  
Wei Wang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Cross Section ◽  
Growth Model ◽  
Diamond Growth ◽  
Step Flow ◽  
Homoepitaxial Growth ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Step Flow Growth

Homoepitaxial growth of step-flow single crystal diamond was performed by microwave plasma chemical vapor deposition system on high-pressure high-temperature diamond substrate. A coarse surface morphology with isolated particles was firstly deposited on diamond substrate as an interlayer under hillock growth model. Then, the growth model was changed to step-flow growth model for growing step-flow single crystal diamond layer on this hillock interlayer. Furthermore, the surface morphology evolution, cross-section and surface microstructure, and crystal quality of grown diamond were evaluated by scanning electron microscopy, high-resolution transmission electron microcopy, and Raman and photoluminescence spectroscopy. It was found that the surface morphology varied with deposition time under step-flow growth parameters. The cross-section topography exhibited obvious inhomogeneity in crystal structure. Additionally, the diamond growth mechanism from the microscopic point of view was revealed to illustrate the morphological and structural evolution.

A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

2014 ◽  
Vol 104 (25) ◽  
pp. 252109 ◽  
Author(s):  
Yoshiaki Mokuno ◽  
Yukako Kato ◽  
Nobuteru Tsubouchi ◽  
Akiyoshi Chayahara ◽  
Hideaki Yamada ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystal ◽  
Free Standing ◽  
Nitrogen Doped ◽  
Diamond Plate ◽  
Low Dislocation Density ◽  
Single Crystal Diamond ◽  
Lift Off

Large-area high-quality single crystal diamond

MRS Bulletin ◽  
2014 ◽  
Vol 39 (6) ◽  
pp. 504-510 ◽  
Author(s):  
Matthias Schreck ◽  
Jes Asmussen ◽  
Shinichi Shikata ◽  
Jean-Charles Arnault ◽  
Naoji Fujimori
Keyword(s):  
Single Crystal ◽  
Large Area ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Single Crystal Diamond ◽  
Image Position

Abstract

scholarly journals Nitrogen and Silicon Defect Incorporation during Homoepitaxial CVD Diamond Growth on (111) Surfaces

2015 ◽  
Vol 1734 ◽  
Author(s):  
Samuel L. Moore ◽  
Yogesh K. Vohra
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Defect Center ◽  
Defect Centers ◽  
Single Crystal Diamond

ABSTRACTChemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. Altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defect incorporation into the (111)-oriented diamond lattice and these findings are presented.

Lift -Off Process to get Free-Standing High Quality Single Crystal Diamond Films and Suspended Single Crystal Diamond Devices

2006 ◽  
Vol 956 ◽  
Author(s):  
Jie Yang ◽  
C. F. Wang ◽  
E. L. Hu ◽  
James E. Butler
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Light Transmission ◽  
Electrochemical Etching ◽  
Etching Process ◽  
Critical Parameters ◽  
Transmission Microscopy ◽  
Single Crystal Diamond ◽  
Cvd Growth ◽  
Lift Off

ABSTRACTFreestanding and suspended single crystal diamond devices, micro disks and beam structures, have been fabricated on single crystal diamond substrates using a lift-off process employing ion implantation followed by electrochemical etching. The ion implantation created subsurface damage in the diamond while the top surface was sufficiently undamaged that a subsequent homo-epitaxial diamond layer could be grown by chemical vapor deposition (CVD). After the CVD growth and patterning by lithography and reactive ion etching, the underlying damage layer was etched/removed by an electrochemical etch. Different implant ions and energies were simulated and tested to optimize the process. The electrochemical etching process was monitored by an optical video technique. The electrochemical etching process used both ac and dc applied electrical potentials. Photoluminescence (PL), Raman spectra, and polarized light transmission microscopy have been used to characterize the implanted substrate and lift-off films. AFM has been used to monitor the surface changes after mechanical polishing, ion implantation, CVD growth and the lift-off process. This research has revealed that the parameters of ion implantation (implant species, dose and energy) dramatically affect the lift-off process. The etching mechanism and critical parameters are discussed in this work. PL spectroscopy indicated differences between the uppermost layers of the homo-epitaxial film and the lift-off interface. Three principal classes of defects have been observed: growth defects inherent in the diamond substrates (type Ib, HPHT), defects induced by the polishing process and associated stress, and point defects.

Single Crystal CVD Diamond growth and characterizations

2006 ◽  
Vol 956 ◽  
Author(s):  
Nicolas Olivier Tranchant ◽  
Dominique Tromson ◽  
Zdenek Remes ◽  
Licinio Rocha ◽  
Milos Nesladek ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Optical Emission ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Photocurrent Spectroscopy ◽  
Excited Species ◽  
Single Crystal Diamond

ABSTRACTDue to its radiation harness, single crystal CVD diamond is a remarkable material for the construction of detectors used in hadron physics and for medical therapy. In this work, single crystal CVD diamond plates were grown in a microwave plasma reactor, using home design substrate holder and a relatively high pressure. Optical Emission Spectroscopy was employed during the MW-PECVD growth to characterize excited species present in the plasma and to detect the presence of residual gases such as nitrogen which is unsuitable for detector's applications.The samples were characterized using various methods such as Raman spectroscopy, photoluminescence (PL), photocurrent spectroscopy, Raman mapping, birefringence microscopy, optical microscopy and also AFM. The best sample, exhibits a FWHM for the 1332 cm−1 Raman peak about 1.6 cm−1. Room temperature PL spectra showed no N–related luminescence, confirming the high quality of the grown single crystal diamond.

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