Diamond Film CVD Synthesis on Titanium: Experimental Evidence of the Intermediate Phases at the Film/Substrate Interface

1995 ◽  
Vol 416 ◽  
Author(s):  
M. Rossi ◽  
M. L. Terranova ◽  
V. Sessa ◽  
G. Vitali
Keyword(s):  
Diamond Films ◽  
High Energy ◽  
High Energy Electron ◽  
Substrate Interface ◽  
Intermediate Phases ◽  
Diamond Substrate ◽  
Cvd Synthesis ◽  
Film Substrate ◽  
Film Interface ◽  
Insight Into

ABSTRACTThe present findings concern the CVD deposition of diamond films on Ti substrates and the presence of a stratification of other various phases (Titanium Carbide, Titanium Hydride and Graphite) through the thickness of the CVD coatings.The reflection high energy electron diffraction (RHEED) technique is mainly used to gain insight into the structure of the various phases generated at the diamond/substrate interface.The experimental results seem to indicate that the structure of the transition layers present at the substrate/film interface play a fundamental role for the control of the heterogeneous nucleation process of the diamond.

Ellipsometry as a Sensitive Technique to Probe film -Substrate Interfaces: Al2O3 on Si(100)

2000 ◽  
Vol 654 ◽  
Author(s):  
M. P. Singh ◽  
G. Raghavan ◽  
A. K. Tyagi ◽  
S. A. Shivashankar
Keyword(s):  
Silicon Film ◽  
Cross Sectional ◽  
Theoretical Simulation ◽  
Substrate Interface ◽  
Alumina Films ◽  
Mocvd Precursors ◽  
Film Substrate ◽  
Film Interface ◽  
Ellipsometry Data ◽  
Conventional Tool

AbstractAn attempt has been made to study the film-substrate interface by using a sensitive, non- conventional tool. Because of the prospective use of gate oxide in MOSFET devices, we have chosen to study alumina films grown on silicon. Film-substrate interface of alumina grown by MOCVD on Si(100) was studied systematically using spectroscopic ellipsometry in the range 1.5-5.0 eV, supported by cross-sectional SEM, and SIMS. The (ε1,ε2) versus energy data obtained for films grown at 600°C, 700°C, and 750°C were modeled to fit a substrate/interface/film “sandwich”. The experimental results reveal (as may be expected) that the nature of the substrate -film interface depends strongly on the growth temperature. The simulated (ε1,ε2) patterns are in excellent agreement with observed ellipsometric data. The MOCVD precursors results the presence of carbon in the films. Theoretical simulation was able to account for the ellipsometry data by invoking the presence of “free” carbon in the alumina films.

Role of film–substrate interface in the internal friction of nanocrystalline diamond films

2006 ◽  
Vol 442 (1-2) ◽  
pp. 332-335 ◽  
Author(s):  
Thomas H. Metcalf ◽  
Xiao Liu ◽  
Brian H. Houston ◽  
James E. Butler ◽  
Tatyana Feygelson
Keyword(s):  
Internal Friction ◽  
Diamond Films ◽  
Nanocrystalline Diamond ◽  
Substrate Interface ◽  
Nanocrystalline Diamond Films ◽  
Film Substrate

In-Situ Study of the Oxide Mediated Epitaxy of CoSi2 on Si

1999 ◽  
Vol 564 ◽  
Author(s):  
M. W. Kleinschmit ◽  
M. Yeadon ◽  
J. M. Gibson
Keyword(s):  
Silicon Surface ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
High Energy Electron ◽  
In Situ Study ◽  
Intermediate Phases ◽  
Transmission Electron ◽  
Combined Imaging

AbstractOxide Mediated Epitaxy (OME) shows promise as a method to form good quality, thin epitaxial CoSi2 films on most Si surfaces. We have performed an in-situ study of the OME of CoSi2, on the Si (001) surface. Our work was carried out with our specially modified ultra-high vacuum transmission electron microscope (UHV TEM) SHEBA (Surface High Energy Electron Beam Apparatus). With SHEBA we were able to monitor the diffraction pattern and therefore the phase formation throughout the anneal. Our results confirm the suppression of intermediate phases during CoSi2 formation in the OME process. We also see a difference in the as deposited Co film when the oxide coated silicon surface is used rather than a clean substrate. From combined imaging and diffraction studies we will shed some light on the mechanism behind the success of OME.

Combinatorial Molecular Layer Epitaxy of Hf Based Phosphor Oxides

2001 ◽  
Vol 700 ◽  
Author(s):  
N. Arai ◽  
T. W. Kim ◽  
H. Kubota ◽  
Y. Matsumoto ◽  
H. Koinuma
Keyword(s):  
Molecular Layer ◽  
High Energy ◽  
Layer Growth ◽  
Laser Deposition ◽  
Layer By Layer ◽  
High Energy Electron ◽  
X Ray ◽  
Substrate Interaction ◽  
Film Substrate

AbstractA series of MHfO3: Tm (M =Ca, Sr and Ba) composition spread films and superlattices (SLs) were quickly fabricated on SrTiO3 (001) substrate in the molecular layer-by-layer growth using combinatorial pulsed laser deposition (PLD) under in-situ reflection high-energy electron diffraction (RHEED) monitoring. Crystal structures and luminescence properties of composition-spread and SLs were evaluated by the concurrent X-ray diffractometer and cathode luminescence (CL), respectively. CL properties of the films were found strongly dependent on their composition and stacking sequence. Possible effect of the stress due to the film-substrate interaction on the CL property is discussed.

A Stationary Solution of High-Energy Electron Reflection (HEER) for An Arbitrary Surface

1990 ◽  
Vol 48 (2) ◽  
pp. 374-375
Author(s):  
YIQUN MA
Keyword(s):  
Stationary Solution ◽  
High Energy ◽  
Bloch Wave ◽  
Dynamical Theory ◽  
High Energy Electron ◽  
Bulk Materials ◽  
Periodic Surface ◽  
Electron Transmission ◽  
Electron Reflection ◽  
Long Time

For a long time, the development of dynamical theory for HEER has been stagnated for several reasons. Although the Bloch wave method is powerful for the understanding of physical insights of electron diffraction, particularly electron transmission diffraction, it is not readily available for the simulation of various surface imperfection in electron reflection diffraction since it is basically a method for bulk materials and perfect surface. When the multislice method due to Cowley & Moodie is used for electron reflection, the “edge effects” stand firmly in the way of reaching a stationary solution for HEER. The multislice method due to Maksym & Beeby is valid only for an 2-D periodic surface.Now, a method for solving stationary solution of HEER for an arbitrary surface is available, which is called the Edge Patching method in Multislice-Only mode (the EPMO method). The analytical basis for this method can be attributed to two important characters of HEER: 1) 2-D dependence of the wave fields and 2) the Picard iteractionlike character of multislice calculation due to Cowley and Moodie in the Bragg case.

Parabolas from Reconstructed Surfaces Observed in Convergent-Beam RHEED Patterns

1990 ◽  
Vol 48 (2) ◽  
pp. 398-399
Author(s):  
M. Gajdardziska-Josifovska
Keyword(s):  
Electron Microscopy ◽  
High Energy ◽  
Two Dimensional ◽  
High Energy Electron ◽  
Reflection And Transmission ◽  
Experimental Diffraction Pattern ◽  
Surface Resonance ◽  
Reconstructed Surfaces ◽  
Reflection Electron Microscopy ◽  
Convergent Beam

Parabolas have been observed in the reflection high-energy electron diffraction (RHEED) patterns from surfaces of single crystals since the early thirties. In the last decade there has been a revival of attempts to elucidate the origin of these surface parabolas. The renewed interest stems from the need to understand the connection between the parabolas and the surface resonance (channeling) condition, the latter being routinely used to obtain higher intensity in reflection electron microscopy (REM) images of surfaces. Several rather diverging descriptions have been proposed to explain the parabolas in the reflection and transmission Kikuchi patterns. Recently we have developed an unifying general treatment in which the parabolas are shown to be K-lines of two-dimensional lattices. Here we want to review the main features of this description and present an experimental diffraction pattern from a 30° MgO (111) surface which displays parabolas that can be attributed to the surface reconstruction.

Kinematic Approximations in TED and RHEED Analysis of Reconstructed Surfaces

1990 ◽  
Vol 48 (2) ◽  
pp. 396-397
Author(s):  
L. -M. Peng ◽  
M. J. Whelan
Keyword(s):  
Electron Diffraction ◽  
Kinematic Analysis ◽  
Incident Beam ◽  
High Energy ◽  
Energy Electron ◽  
Great Success ◽  
High Energy Electron ◽  
Kinematic Approximation ◽  
Reconstructed Surfaces

In recent years there has been a trend in the structure determination of reconstructed surfaces to use high energy electron diffraction techniques, and to employ a kinematic approximation in analyzing the intensities of surface superlattice reflections. Experimentally this is motivated by the great success of the determination of the dimer adatom stacking fault (DAS) structure of the Si(111) 7 × 7 reconstructed surface.While in the case of transmission electron diffraction (TED) the validity of the kinematic approximation has been examined by using multislice calculations for Si and certain incident beam directions, far less has been done in the reflection high energy electron diffraction (RHEED) case. In this paper we aim to provide a thorough Bloch wave analysis of the various diffraction processes involved, and to set criteria on the validity for the kinematic analysis of the intensities of the surface superlattice reflections.The validity of the kinematic analysis, being common to both the TED and RHEED case, relies primarily on two underlying observations, namely (l)the surface superlattice scattering in the selvedge is kinematically dominating, and (2)the superlattice diffracted beams are uncoupled from the fundamental diffracted beams within the bulk.

Sign in / Sign up

Export Citation Format

Share Document