Measurement of thin‐film optical absorption at the air‐film interface within the film and at the film‐substrate interface

1979 ◽  
Vol 34 (10) ◽  
pp. 677-679 ◽  
Author(s):  
P. A. Temple
Keyword(s):  
Thin Film ◽  
Optical Absorption ◽  
Substrate Interface ◽  
Film Substrate ◽  
Air Film ◽  
Film Interface

Ellipsometry as a Sensitive Technique to Probe film -Substrate Interfaces: Al2O3 on Si(100)

2000 ◽  
Vol 654 ◽  
Author(s):  
M. P. Singh ◽  
G. Raghavan ◽  
A. K. Tyagi ◽  
S. A. Shivashankar
Keyword(s):  
Silicon Film ◽  
Cross Sectional ◽  
Theoretical Simulation ◽  
Substrate Interface ◽  
Alumina Films ◽  
Mocvd Precursors ◽  
Film Substrate ◽  
Film Interface ◽  
Ellipsometry Data ◽  
Conventional Tool

AbstractAn attempt has been made to study the film-substrate interface by using a sensitive, non- conventional tool. Because of the prospective use of gate oxide in MOSFET devices, we have chosen to study alumina films grown on silicon. Film-substrate interface of alumina grown by MOCVD on Si(100) was studied systematically using spectroscopic ellipsometry in the range 1.5-5.0 eV, supported by cross-sectional SEM, and SIMS. The (ε1,ε2) versus energy data obtained for films grown at 600°C, 700°C, and 750°C were modeled to fit a substrate/interface/film “sandwich”. The experimental results reveal (as may be expected) that the nature of the substrate -film interface depends strongly on the growth temperature. The simulated (ε1,ε2) patterns are in excellent agreement with observed ellipsometric data. The MOCVD precursors results the presence of carbon in the films. Theoretical simulation was able to account for the ellipsometry data by invoking the presence of “free” carbon in the alumina films.

Electrodeposited thin-film CuxSb anodes for Li-ion batteries: enhancement of cycle life via tuning of film composition and engineering of the film-substrate interface

2018 ◽  
Vol 6 (26) ◽  
pp. 12708-12717 ◽  
Author(s):  
Maxwell C. Schulze ◽  
Roland K. Schulze ◽  
Amy L. Prieto
Keyword(s):  
Thin Film ◽  
Substrate Material ◽  
Cycling Stability ◽  
Cycle Life ◽  
Li Ion Batteries ◽  
Film Composition ◽  
Substrate Interface ◽  
Li Ion ◽  
Film Substrate

Choice of substrate material for electrodeposited Sb alloy-anodes influences the cycling stability and lifetime of Li-ion batteries.

Diamond Film CVD Synthesis on Titanium: Experimental Evidence of the Intermediate Phases at the Film/Substrate Interface

1995 ◽  
Vol 416 ◽  
Author(s):  
M. Rossi ◽  
M. L. Terranova ◽  
V. Sessa ◽  
G. Vitali
Keyword(s):  
Diamond Films ◽  
High Energy ◽  
High Energy Electron ◽  
Substrate Interface ◽  
Intermediate Phases ◽  
Diamond Substrate ◽  
Cvd Synthesis ◽  
Film Substrate ◽  
Film Interface ◽  
Insight Into

ABSTRACTThe present findings concern the CVD deposition of diamond films on Ti substrates and the presence of a stratification of other various phases (Titanium Carbide, Titanium Hydride and Graphite) through the thickness of the CVD coatings.The reflection high energy electron diffraction (RHEED) technique is mainly used to gain insight into the structure of the various phases generated at the diamond/substrate interface.The experimental results seem to indicate that the structure of the transition layers present at the substrate/film interface play a fundamental role for the control of the heterogeneous nucleation process of the diamond.

Instability Analysis of Strained Interfaces Via a Discrete Atom Method

1994 ◽  
Vol 356 ◽  
Author(s):  
Jong K. Lee
Keyword(s):  
Thin Film ◽  
Morphological Evolution ◽  
Equilibrium Shape ◽  
Morphological Instability ◽  
Interfacial Waves ◽  
Substrate Interface ◽  
Film Substrate ◽  
The Waves ◽  
Curved Interface ◽  
Dimensional Crystal

AbstractThe morphological instability of an epitaxially-strained, thin film is studied by means of a discrete atom method in a dislocation-free, two-dimensional crystal. The instability of the film-substrate interface is also examined in conjunction with the migration of the free surface. The results show that a mobile film-substrate interface can accelerate merger between the two surfaces, and anisotropic effects facilitate island formation. In addition, the instability of a curved interface is discussed with the results on the morphological evolution of coherent precipitates. A circular, soft precipitate in an isotropic matrix undergoes a series of shape transitions before reaching its equilibrium shape. As in the strained thin film case, transition begins with interfacial waves induced by the coherency strain. The waves then develop small lobes, which coarsen into a lower density of larger lobes. The larger lobes eventually coarsen as the equilibrium shape is approached. Anisotropic effects suppress some of the interfacial waves.

Scaling effects in structural-phase self-organization at the “thin film - substrate” interface

2007 ◽  
Vol 10 (3-4) ◽  
pp. 117-128 ◽  
Author(s):  
V.E. Panin ◽  
A.V. Panin ◽  
V.P. Sergeev ◽  
A.R. Shugurov
Keyword(s):  
Thin Film ◽  
Structural Phase ◽  
Self Organization ◽  
Scaling Effects ◽  
Substrate Interface ◽  
Film Substrate

The Failure Investigations on the Thin Film Interface under the Dynamic Loading

2011 ◽  
Vol 464 ◽  
pp. 542-547
Author(s):  
He Jun Wang ◽  
Hui Xia Liu ◽  
Zong Bao Shen ◽  
Wei Li ◽  
Yuan Yuan Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Finite Element Method ◽  
Finite Element ◽  
Constitutive Model ◽  
Dynamic Loading ◽  
Strong Impact ◽  
The Finite Element Method ◽  
Material Constitutive Model ◽  
Film Substrate ◽  
Film Interface

The film spallation, a typical film / substrate failure style, could be caused by many reasons. The strong impact on the film/substrate can also lead to this failure phenomenon. So the film spallation induced by the strong impact is explored in this paper. Here the strong impact comes from the laser-driven flyer loading. In the numerical simulating process, the Finite Element Method (FEM) and Johnson-Cook material constitutive model have been used, moreover, some ideal film spallation results were got, which are helpful for us to understand this failure phenomenon.

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