Liquid Source Mocvd of High Quality Yba2Cu3O7−x Films on Polycrystalline And Amorphous Substrates

1995 ◽  
Vol 415 ◽  
Author(s):  
D.B. Studebaker ◽  
G. Doubinina ◽  
J. Zhang ◽  
Y.Y. Wang ◽  
V.P. Dravid ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Fused Silica ◽  
Buffer Layers ◽  
Organic Chemical ◽  
Polycrystalline Alumina ◽  
Silica Substrate ◽  
Liquid Source ◽  
Amorphous Substrates ◽  
Metal Organic ◽  
Steel Substrates

ABSTRACTHigh temperature superconducting Yba2Cu3O7−x films were grown by liquid delivery metal-organic chemical vapor deposition (LDMOCVD) on silver-coated stainless steel substrates. The films are c-axis oriented, and exhibit a very low surface resistance of 110 μΩ at 77 K and 3 GHz. A two-step LDMOCVD method for growth of oriented (200) CeO2 films on amorphous substrates was also developed. Films of CeO2 for YBCO buffer layers were grown on fused silica (SiO2), polycrystalline alumina (Al2O3), and sapphire (A12O3). A highly c-axis oriented film of YBCO was grown on a fused silica substrate with a CeO2 buffer layer.

In situ single-liquid-source metal-organic chemical vapor deposition of (La0.8Ca0.2)MnO3 giant magnetoresistive films

1995 ◽  
Vol 10 (9) ◽  
pp. 2166-2169 ◽  
Author(s):  
Y.Q. Li ◽  
J. Zhang ◽  
S. Pombrik ◽  
S. DiMascio ◽  
W. Stevens ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Organic Solution ◽  
Liquid Source ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

A large magnetoresistance change (ΔR/RH) of −550% has been observed at 270 K in (La0.8Ca0.2)MnO3 thin films. The films were prepared in situ on LaAlO3 substrates by single-liquid-source metal-organic chemical vapor deposition. M(thd)n (M = La, Ca, and Mn, and n = 2, 3) were dissolved together in an organic solution and used as precursors for the deposition of (La0.8Ca0.2)MnO3 thin films. Deposition was conducted at an oxygen partial pressure of 1.2 Torr and a substrate temperature ranging from 600 °C to 700 °C. The mechanism for the large magnetoresistance change in this manganese oxide is briefly discussed.

High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates

2018 ◽  
Vol 6 (7) ◽  
pp. 1642-1650 ◽  
Author(s):  
Wenliang Wang ◽  
Yunhao Lin ◽  
Yuan Li ◽  
Xiaochan Li ◽  
Liegen Huang ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting Diode ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical ◽  
Light Emitting ◽  
Si Substrates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

High-quality GaN-based light-emitting diode (LED) wafers have been grown on Si substrates by metal–organic chemical vapor deposition by designing epitaxial structures with AlN/Al0.24Ga0.76N buffer layers and a three-dimensional (3D) GaN layer.

MOCVD Growth of Ga(Al)N/InGaN/Ga(Al)N-Heterostructures: Influence of the Buffer Layer Al-Concentration and Growth Duration on the In-Incorporation in InGaN

2001 ◽  
Vol 680 ◽  
Author(s):  
Marco Schowalter ◽  
Brigitte Neubauer ◽  
Andreas Rosenauer ◽  
Dagmar Gerthsen ◽  
Oliver Schön ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Organic Chemical ◽  
Growth Duration ◽  
Mocvd Growth ◽  
Transmission Electron ◽  
Metal Organic ◽  
Composition Fluctuations ◽  
Organic Chemical Vapor Deposition

ABSTRACTTransmission electron microscopy (TEM) has been applied to analyze the thickness and the In-concentration of InGaN layers in GaN/InGaN/GaN- and AlGaN/InGaN/AlGaN-quantum well (QW) structures. Two series of samples were grown by metal organic chemical vapor deposition varying either only the growth duration for the InGaN QW or by changing the Al- concentration in the buffer layers at unaltered InGaN growth conditions. A rising average In- concentration from 6.5 to 15.4 % and a decreasing growth rate are observed with increasing growth duration. The increase of the Al-concentration in the buffer layers from 0 to 36 % strongly affects the In-incorporation during the InGaN growth, which decreases from 17.5 to 2.5 %. All samples are characterized by an inhomogeneous In-distribution containing In-rich agglomerates with a size of only a few nanometers and less pronounced composition fluctuations on a scale of 100 nm.

Deposition of Ru Thin Films by MOCVD Using Direct Liquid Injection System

2001 ◽  
Vol 672 ◽  
Author(s):  
Sang Y. Kang ◽  
Cheol S. Hwang ◽  
Hyeong J. Kim
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Injection System ◽  
Organic Chemical ◽  
Si Substrates ◽  
Liquid Injection ◽  
Liquid Source ◽  
Metal Organic ◽  
Direct Liquid Injection

ABSTRACTRu thin films were deposited on SiO2/Si and (Ba,Sr)TiO3 [BST]/Pt/TiO2/SiO2/Si substrates using Ru(C2H5C5H4)2 [Ru(EtCp)2] by metal-organic chemical vapor deposition (MOCVD). To determine the effects of the solvent, C4H8O [tetrahydrofuran: THF], it was injected into the reaction chamber by the Direct Liquid Injection (DLI) system while Ru(EtCp)2 was input through the bubbler system. Also, Ru thin films were deposited using a liquid source, Ru(EtCp)2 dissolved in THF, delivered by the DLI system. The surface of the Ru thin films deposited on the BST substrate using only Ru(EtCp)2 through the bubbler system was very rough and milky, but the addition of THF made the surface of the films smooth and clean. In addition, Ru films deposited at 325°C using Ru(EtCp)2 dissolved in THF through the DLI system have a dense and smooth microstructure with resistivity as low as 15µωcm.

Preparation and Electrical Properties ofSrTiO3Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition (MOCVD)

1996 ◽  
Vol 35 (Part 1, No. 9B) ◽  
pp. 4890-4895 ◽  
Author(s):  
Chang Seok Kang ◽  
Cheol Seong Hwang ◽  
Hag-Ju Cho ◽  
Byoung Taek Lee ◽  
Soon Oh Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Liquid Source ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method

2008 ◽  
Vol 1068 ◽  
Author(s):  
KungLiang Lin ◽  
Edward-Yi Chang ◽  
Tingkai Li ◽  
Wei-Ching Huang ◽  
Yu-Lin Hsiao ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Metal Organic ◽  
Proper Design ◽  
Organic Chemical Vapor Deposition ◽  
Gan Film

ABSTRACTGaN film grown on Si substrate with AlN/AlxGa1−xN buffer is studied by low pressure metal organic chemical vapor deposition (MOCVD) method. The AlxGa1−xN film with Al composition varying from 0∼ 0.66 was used. The correlation of the Al composition in the AlxGa1−xN film with the stress of the GaN film grown was studied using high resolution X-ray diffraction including symmetrical and asymmetrical ω/2θscans and reciprocal space maps. It is found that with proper design of the Al composition in the AlxGa1−xN buffer layer, crack-free GaN films can be successfully grown on Si (111) substrates using AlN and AlxGa1−xN buffer layers.

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