Schottky Barrier Diodes From Electrochemically Generated Polypyrrole-Aluminium Junctions

1995 ◽  
Vol 413 ◽  
Author(s):  
J Rodriguez ◽  
J. P. Moliton ◽  
T Trigaud ◽  
T. F. Otero ◽  
H. Grande
Keyword(s):  
Surface Layer ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Bulk Polymer ◽  
Polypyrrole Films ◽  
Planar Structures ◽  
Oxidized Surface Layer ◽  
Polymer Metal ◽  
Metal Polymer

ABSTRACTPolypyrrole films were electrogenerated and electrochemically compacted at high cathodic potentials on aluminium. Films removed from the electrode after polarization at -2000 mV show stable bulk conductivities of 10-6 S/cm for months. Planar structures metal/polymer/metal present rectifying properties. The presence of a thin oxidized surface layer having a higher conductivity than that of the bulk polymer can be deduced remaining reduced the polymer mass.

Gallium Oxide Schottky Barrier Diodes

2016 ◽  
Vol 136 (4) ◽  
pp. 479-483
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akito Kuramata
Keyword(s):  
Schottky Barrier ◽  
Gallium Oxide ◽  
Schottky Barrier Diodes

Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity

2020 ◽  
Vol 13 (9) ◽  
pp. 096502
Author(s):  
Yu Lu ◽  
Feng Zhou ◽  
Weizong Xu ◽  
Dongsheng Wang ◽  
Yuanyang Xia ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Turn On ◽  
High Uniformity

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

2019 ◽  
Vol 780 ◽  
pp. 476-481 ◽  
Author(s):  
Hong Gu ◽  
Cong Hu ◽  
Jiale Wang ◽  
Youming Lu ◽  
Jin-Ping Ao ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Free Standing

Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

2021 ◽  
Vol 118 (24) ◽  
pp. 243501
Author(s):  
Xiaolu Guo ◽  
Yaozong Zhong ◽  
Xin Chen ◽  
Yu Zhou ◽  
Shuai Su ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Gan On Si

Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

2021 ◽  
Vol 118 (17) ◽  
pp. 172106
Author(s):  
Sayleap Sdoeung ◽  
Kohei Sasaki ◽  
Satoshi Masuya ◽  
Katsumi Kawasaki ◽  
Jun Hirabayashi ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Vapor Phase ◽  
Stacking Faults ◽  
Schottky Barrier Diodes
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