scholarly journals Dopant Incorporation Efficiency in CVD Silicon Carbide Epilayers

1995 ◽  
Vol 410 ◽  
Author(s):  
D. J. Larkin
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Dopant Concentration ◽  
Competition Effect ◽  
Dopant Incorporation ◽  
The Many ◽  
Site Competition ◽  
Secondary Ion ◽  
Dopant Source ◽  
Incorporation Efficiency

ABSTRACTIn order to ensure reproducible and reliable SiC semiconductor device characteristics, controlled dopant incorporation must be accomplished. Some of the many factors which greatly influence dopant incorporation are the site-competition effect, SiC(0001) substrate polarity, substrate temperature, and the dopant-source reactor concentration. In this paper, dopant incorporation is considered and compared for various dopants in the context of dopant incorporation efficiency. By using secondary ion mass spectrometry (SIMS), the relative dopant incorporation efficiencies were calculated by dividing the SIMS determined dopant concentration in the resulting epitaxial layer by the intentional gas phase dopant concentration used during the SiC CVD. Specifically, the relative magnitudes of dopant incorporation efficiencies for nitrogen, phosphorus, and boron in 6H-SiC (0001) Si-face epitaxial layers are compared as a function of the site-competition effect and the dopant-source reactor concentrations. This serves as a first approximation for comparison of the relative “doping potencies” of some common dopants used in SiC CVD epitaxial growth.

A Sims Study of Electroluminescent Phosphors: SrS:Cu

1999 ◽  
Vol 560 ◽  
Author(s):  
Lily H. Zhang ◽  
Larry Wang ◽  
Wusheng Tong ◽  
YongBao Xin
Keyword(s):  
Material Characterization ◽  
Secondary Ion Mass Spectrometry ◽  
Dopant Concentration ◽  
Thermal Quenching ◽  
Areal Density ◽  
Device Performance ◽  
Cell Temperature ◽  
Co Doping ◽  
Doping Effects ◽  
Secondary Ion

ABSTRACTThis study has used secondary ion mass spectrometry (SIMS) as a technique for thin film EL material characterization. It has shown that the Cu dopant concentration in the SrS films directly correlates with the luminescent brightness of the EL devices. A series of SrS:Cu,Y were grown using MBE to study the Y co-doping effects. It has been found that Y peak concentration and areal density in the SrS increased as the Y evaporation cell temperature was increased. The maximum PL intensity was found in the sample grown in the middle of the Y cell temperature range used. The Y co-doping has shown to reduce the thermal quenching effects in SrS EL devices. Therefore, in this series of samples, a good correlation has been found between Y and Cu concentration and the EL device performance characteristics.

Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 625-628
Author(s):  
Hun Jae Chung ◽  
Sung Wook Huh ◽  
A.Y. Polyakov ◽  
Saurav Nigam ◽  
Qiang Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Boron Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Bulk Crystals ◽  
Hall Effect Measurements ◽  
Site Competition ◽  
Secondary Ion

Undoped 6H- and 4H-SiC crystals were grown by Halide Chemical Vapor Deposition (HCVD). Concentrations of impurities were measured by various methods including secondary-ion-mass spectrometry (SIMS). With increasing C/Si ratio, nitrogen concentration decreased and boron concentration increased as expected for the site-competition effect. Hall-effect measurements on 6H-SiC crystals showed that with the increase of C/Si ratio from 0.06 to 0.7, the Fermi level was shifted from Ec-0.14 eV (nitrogen donors) to Ev+0.6 eV (B-related deep centers). Crystals grown with C/Si > 0.36 showed high resistivities between 1053 and 1010 4cm at room temperature. The high resistivities are attributed to close values of the nitrogen and boron concentrations and compensation by deep defects present in low densities.

Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers

2014 ◽  
Vol 806 ◽  
pp. 45-50 ◽  
Author(s):  
Roxana Arvinte ◽  
Marcin Zielinski ◽  
Thierry Chassagne ◽  
Marc Portail ◽  
Adrien Michon ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Present Contribution ◽  
Growth Pressure ◽  
Temperature Growth ◽  
Dopant Incorporation ◽  
Capacitance Voltage ◽  
Secondary Ion

In the present contribution, the trends in voluntary incorporation of aluminum in 4H-SiC homoepitaxial films are investigated. The films were grown on Si-and C-face 4H-SiC 8°off substrates by chemical vapor deposition (CVD) in a horizontal, hot wall CVD reactor. Secondary Ion Mass Spectrometry (SIMS) and capacitance-voltage (C-V) measurements were used to determine the Al incorporation in the samples. The influence of Trimethylaluminum (TMA) flow rate, growth temperature, growth pressure and C/Si ratio on the dopant incorporation was studied.

A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
A.J. Ptak ◽  
T.H. Myers ◽  
Lijun Wang ◽  
N.C. Giles ◽  
M. Moldovan ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Rf Plasma ◽  
Dopant Incorporation ◽  
Optical Activation ◽  
P Type ◽  
Kinetics Of ◽  
Secondary Ion

ABSTRACTStep-doped structures of both magnesium and beryllium were grown in GaN and analyzed using secondary ion mass spectrometry. Dopant incorporation was studied as a function of substrate temperature and dopant flux for Ga-polarity and N-polarity GaN. Incorporation is different for each polarity, with Mg incorporating by up to a factor of 20 times more (30 times more with atomic hydrogen) on the Ga-face, while Be incorporates more readily on the N-face. The effect of atomic hydrogen on the incorporation kinetics of both Mg and Be is also discussed. Mg and Be both undergo surface segregation during growth. Photoluminescence measurements suggest that Be is a p-type dopant with an optical activation energy of approximately 100 meV.

The Effect of Temperature and Si Concentration on the Mixing of AlAs/GaAs Superlattices

1986 ◽  
Vol 77 ◽  
Author(s):  
Ping Mei ◽  
H. W. Yoon ◽  
T. Venkatesan ◽  
S. A. Schwarz ◽  
J. P. Harbison
Keyword(s):  
Activation Energy ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Length ◽  
Dopant Concentration ◽  
Effect Of Temperature ◽  
Surface Layers ◽  
Near Surface ◽  
Depth Profiles ◽  
Secondary Ion

ABSTRACTThe intermixing of AlAs/GaAs superlattices has been investigated as a function of Si concentration following anneals in the range of 500 to 900 C. The superlattice samples were grown by molecular beam epitaxy(MBE) and the near surface layers were doped with silicon at concentrations of 2×10 to 5×1018 cm-3. Si and Al depth profiles were measured with secondary ion mass spectrometry (SIMS).The diffusion length and activation energy of Al as a function of silicon dopant concentration are derived from the SIMS data. In the temperature range studied an activation energy for the Al interdiffusion of -4eV is observed with the diffusion coefficients increasing rapidly with Si concentration.

scholarly journals Characterization of Surface and Sub- Surface Defects on Devices using Complimentary Techniques

2008 ◽  
Vol 16 (6) ◽  
pp. 18-20
Author(s):  
Vincent S. Smentkowski ◽  
Sara G. Ostrowski ◽  
Lauraine Denault ◽  
Charles G. Woychik
Keyword(s):  
Gamma Ray ◽  
Surface Defects ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Surface Composition ◽  
Electrical Contacts ◽  
Leakage Currents ◽  
Contact Metallization ◽  
Secondary Ion

Being able to differentiate surface from bulk defects on devices requires the use of complimentary characterization tools. In this article, we show how light microscopy, scanning electron microscopy, energy dispersive X-ray analysis, and time of flight secondary ion mass spectrometry provides complimentary information about the surface and sub-surface composition, topography, and microstructure of a semiconductor device.To create a gamma-ray spectroscopy detector, electrical contacts consisting of a blanket coated cathode and a pixilated anode can be deposited directly on opposite faces of a cadmium zinc telluride (CZT) crystal. The contact metallization must adhere to the surfaces, and the streets between adjacent anode pads must be free of residual metal and contaminants to avoid excessive interpixel leakage currents. The analysis reported below was used to validate the structure and composition of the contact metal stack and to characterize the streets of the anode pad array.

scholarly journals Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

2016 ◽  
Vol 7 ◽  
pp. 1783-1793 ◽  
Author(s):  
Ann-Kathrin Kleinschmidt ◽  
Lars Barzen ◽  
Johannes Strassner ◽  
Christoph Doering ◽  
Henning Fouckhardt ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Device Fabrication ◽  
Etch Depth ◽  
Reflectance Anisotropy ◽  
Depth Control ◽  
Dry Etch ◽  
First Time ◽  
Secondary Ion

Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS) reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL) is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible.

Trends in Dopant Incorporation for 3C-SiC Films on Silicon

2007 ◽  
Vol 556-557 ◽  
pp. 207-210 ◽  
Author(s):  
Marcin Zielinski ◽  
Marc Portail ◽  
Hervé Peyre ◽  
Thierry Chassagne ◽  
S. Ndiaye ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Growth Parameters ◽  
Nitrogen Flow ◽  
Nitrogen Flow Rate ◽  
Temperature Growth ◽  
Dopant Incorporation ◽  
Residual Aluminum ◽  
Secondary Ion ◽  
Oriented Layers ◽  
Sic Films

We have investigated the influence of several growth parameters on the incorporation of doping species in the case of 3C-SiC layers grown by CVD on silicon. This includes nitrogen (both intentional and residual) as well as residual aluminum. All concentrations have been determined by SIMS (Secondary Ion Mass Spectrometry). First, we investigated the effect of the growth temperature, growth rate and C/Si ratio on the doping level of (100) oriented layers. Then, we compared the change in nitrogen incorporation versus nitrogen flow rate for layers grown on (100), (111), (110) and (211) oriented wafers.

A Sims Study of Electroluminescent Phosphors: SrS:Cu

1999 ◽  
Vol 558 ◽  
Author(s):  
Lily H. Zhang ◽  
Larry Wang ◽  
Wusheng Tong ◽  
YongBao Xin
Keyword(s):  
Material Characterization ◽  
Secondary Ion Mass Spectrometry ◽  
Dopant Concentration ◽  
Thermal Quenching ◽  
Areal Density ◽  
Device Performance ◽  
Cell Temperature ◽  
Co Doping ◽  
Doping Effects ◽  
Secondary Ion

ABSTRACTThis study has used secondary ion mass spectrometry (SIMS) as a technique for thin film EL material characterization. It has shown that the Cu dopant concentration in the SrS films directly correlates with the luminescent brightness of the EL devices. A series of SrS:Cu, Y were grown using MBE to study the Y co-doping effects. It has been found that Y peak concentration and areal density in the SrS increased as the Y evaporation cell temperature was increased. The maximum PL intensity was found in the sample grown in the middle of the Y cell temperature range used. The Y co-doping has shown to reduce the thermal quenching effects in SrS EL devices. Therefore, in this series of samples, a good correlation has been found between Y and Cu concentration and the EL device performance characteristics.

Boron Doping using Proximity Rapid Thermal Diffusion from Spin-on-Dopants

1994 ◽  
Vol 342 ◽  
Author(s):  
M. Rastogi ◽  
W. Zagozdzon-Wosik ◽  
F. Romero-Borja ◽  
J. M. Heddleson ◽  
R. Beavers ◽  
...  
Keyword(s):  
Thermal Diffusion ◽  
Process Variables ◽  
Dopant Incorporation ◽  
Boron Doped ◽  
Doping Technique ◽  
Rapid Thermal Diffusion ◽  
P Type ◽  
Temperature Time ◽  
Secondary Ion ◽  
Dopant Source

ABSTRACTProximity rapid thermal diffusion (RTD) has been investigated as a doping technique for p-type boron doped junctions. The efficiency of RTD has been studied as a function of process variables (temperature, time, and ambient) and evaluated based on sheet resistance measurements, secondary ion mass spectroscopy (SIMS), spreading resistance (SR), and Fourier transmission infrared absorption (FTIR) in a spin-on-dopant source (SOD). The doping efficiency in source wafers is controlled by different mechanism than in processed wafers. Strong influence of dopant incorporation in the processed wafers on oxygen content in the diffusion ambient is observed especially at low diffusion temperatures.

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