Characterization of Emitter-Collector Shorts by Anodization, Voltage Contrast Sem, and Tem
Keyword(s):
AbstractChemical anodization and voltage contrast scanning electron microscopy (VC-SEM) have been used to identify electrically faulty structures in a bipolar test array. Direct comparison of these techniques was achieved by examining the same emitters with each method. VC-SEM is shown to be a useful technique for delineating E-C shorts because of its nondestructive and purely electrical nature. Further investigations by transmission electron microscopy revealed dislocations in many short-circuited emitters and occasionally in unshorted devices. This confirmed prior observations that crystallographic defects in silicon devices may sometimes be, but are not always, electrically active.
2012 ◽
Vol 174-177
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pp. 508-511
2008 ◽
Vol 10
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pp. 11-22
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1988 ◽
Vol 46
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pp. 220-221
1993 ◽
Vol 66
(8)
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pp. 2419-2421
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