Growth of thin Pb Layers on Cu(001)

1984 ◽  
Vol 41 ◽  
Author(s):  
R. J. Culbertson ◽  
Y. Kuk ◽  
L. C. Feldman
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Three Dimensional ◽  
High Energy ◽  
Two Dimensional ◽  
Ion Scattering ◽  
Island Growth ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

AbstractThe growth of thin Pb layers (<12 monolayers) was studied in ultrahigh vacuum by high energy ion scattering/channeling, low energy electron diffraction (LEED)), and Auger electron spectroscopy (AES). Deposition and analysis were performed at 300 K and 140 K. The Pb coverage was determined quantitatively by ion scattering. The results indicated a clear transition in the growth mode as a function of temperature. At 300 K, two-dimensional island growth was observed up to 1.0 monolayer, followed by three-dimensional epitaxial growth of strained islands. Two-dimensional island growth was observed up to 5 monolayers at 140 K. The relative positions of the overlayer atoms relative to the substrate was studied to understand two-dimensional phase transitions above room temperature.

The growth of AuGa2 thin films on GaAs(001) to form chemically unreactive interfaces

1986 ◽  
Vol 1 (4) ◽  
pp. 537-542 ◽  
Author(s):  
Jeffrey R. Lince ◽  
Tsai C. Thomas ◽  
Williams R. Stanley
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Substrate Surface ◽  
Film Deposition ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Interface Roughening ◽  
Low Energy Electron ◽  
Electron Energy Loss

Thin AuGa2 films were grown by codeposition from separate Au and Ga evaporation sources on clean GaAs(001) substrates in ultrahigh vacuum, and were studied by Auger electron spectroscopy, electron energy-loss spectroscopy, low-energy electron diffraction, scanning electron microscopy, and x-ray diffractometry. The morphology and crystallinity of the AuGa2 were highly dependent upon the film deposition and annealing history. Films grown on room-temperature substrates were continuous, specular, and polycrystalline, but the dominant orientation was with the (001) planes of the crystallites parallel to the substrate surface. Annealing to temperatures between 300°and 480°C caused the film to break up and coalesce into rectangular crystallites, which were all oriented with (001) parallel to the surface. An anneal to 500°C, which is above the AuGa2 melting point, resulted in the formation of irregular polycrystalline islands of AuGa2 on the GaAs(001) substrate. No interface roughening or chemical reactions between the film and substrate or interface were observed for even the highest-temperature anneals.

A RHEED study of Cu3Au (110) surface

1992 ◽  
Vol 50 (2) ◽  
pp. 1460-1461
Author(s):  
Yi Huang ◽  
John M. Cowley
Keyword(s):  
Electron Diffraction ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
High Energy ◽  
High Energy Electron ◽  
Ion Scattering ◽  
Long Period ◽  
The Ideal

In recent years the Cu3Au (110) surface has been studied by many authors to reveal its ordering structure and order-disorder transition phenomena. A 2×1 structure which corresponds to an ideal truncation of the ordered bulk crystal and a 4×1 reconstructed structure have been observed. Using ion scattering methods, McRae et al have determined the Au fractions in the first and the second layer at room temperature, which deviate from the ideal bulk value and indicate the segregation of Au to the surface. But the question how the atoms are rearranged in the 4×1 structure and why some of the Au stays in the second layer have not been answered. Another important question about Cu3Au (110) surface is whether the long period ordering structure (LPS) exists on the surface. In present work the Cu3Au (precise composition Cu71.7Au28.3) (110) surface is studied with Auger electron Spectroscopy (AES) and Reflection High Energy Electron Diffraction (RHEED) which have not been used to study the Cu3Au surface before.

EFFECT OF Cu DEPOSITION AND ANNEALING UPON A GaSe/Si(111) HETEROJUNCTION

1999 ◽  
Vol 06 (06) ◽  
pp. 1173-1178 ◽  
Author(s):  
B. ABIDRI ◽  
J.-P. LACHARME ◽  
M. GHAMNIA ◽  
C. A. SÉBENNE ◽  
M. EDDRIEF ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Low Energy ◽  
Layered Semiconductor ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Temperature Interaction

Single crystal substrates of GaSe, a layered semiconductor with a 2 eV band gap, were epitaxially grown by MBE onto a Si(111)(1×1)–H substrate, forming a perfectly abrupt heterojunction. Controlled amounts of Cu were sequentially deposited onto the clean passive surface of GaSe from a few tenths to several hundred monolayers (1 ML refers to the GaSe surface: 8 × 1014 at/cm 2). After given Cu depositions, the effect of UHV annealings at increasing temperatures was studied, until GaSe removal. The system was characterized as a function of either Cu deposit or annealing temperature using low energy electron diffraction, Auger electron spectroscopy and photoemission yield spectroscopy. The room temperature interaction starts as an apparent intercalation process until Cu islands begin to form, beyond about 50 ML. Upon annealings as low as 250°C, several ML of Cu disappear into the bulk of an apparently recovered GaSe, towards the GaSe/Si interface.

ADSORPTION AND REACTION OF NITRIC OXIDE ON Si(111)-Au SURFACES

2006 ◽  
Vol 13 (02n03) ◽  
pp. 191-196 ◽  
Author(s):  
T. NISHIMURA ◽  
K. HATTORI ◽  
K. KATAOKA ◽  
Y. SHIMAMOTO ◽  
H. DAIMON
Keyword(s):  
Nitric Oxide ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Low Energy ◽  
The Other ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

We studied adsorption and reaction of nitric oxide on Si (111)7 × 7, 5 × 2- Au , [Formula: see text], [Formula: see text], and 6 × 6- Au surfaces with low-energy electron diffraction, Auger electron spectroscopy, and scanning tunneling microscopy (STM). We found that NO gas reacts most strongly with the 7 × 7 surface, strongly with the 5 × 2- Au surface, and little with the other Si (111)- Au surfaces. STM results indicated that the NO exposure removes adatoms and erodes the row structure on the 5 × 2- Au surface at room temperature.

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