Ge-Related Interfacial Defects In SiGe Alloy Structures

1995 ◽  
Vol 406 ◽  
Author(s):  
Patricia J. Macfarlane ◽  
M. E. Zvanut ◽  
W. E. Carlos ◽  
M. E. Twigg ◽  
P. E. Thompson
Keyword(s):  
Depth Profile ◽  
Epr Spectra ◽  
Transmission Electron Micrograph ◽  
Dangling Bond ◽  
Electron Micrograph ◽  
Cross Sectional ◽  
Paramagnetic Resonance ◽  
Transmission Electron ◽  
Interfacial Defects ◽  
Electron Paramagnetic

AbstractThis paper reports etching results supporting the identification of the SG1 center as a germanium dangling bond defect at the interface between an oxide and crystalline SiGe. The presence of this defect is significant because, like an analogous center in Si-based systems, it may alter the operation of any microelectronic or micro-optical device which incorporates an interface between SiGe and an overlying oxide. The samples examined are oxygen implanted SiGe layers in which the SG 1 center is believed to occur at the interface between oxide precipitates and SiGe. Because of the center's apparent relation to the oxide precipitates distributed through layers of the sample, a depth profile assists in confirming the interfacial nature of the defect. We obtain a depth profile by comparing electron paramagnetic resonance (EPR) spectra of samples etched to decreasing thickness. EPR spectra indicate that the SG1 center decreases with depth in a manner that when correlated to a cross sectional transmission electron micrograph confirms the association with Si0 2 and supports its location at the SiGe/SiO2 precipitate interface.

Ge-Related Interfacial Defects in Sige Alloy Structures

1995 ◽  
Vol 405 ◽  
Author(s):  
Patricia J. Macfarlane ◽  
M. E. Zvanut ◽  
W. E. Carlos ◽  
M. E. Twigg ◽  
P. E. Thompson
Keyword(s):  
Depth Profile ◽  
Epr Spectra ◽  
Transmission Electron Micrograph ◽  
Dangling Bond ◽  
Electron Micrograph ◽  
Cross Sectional ◽  
Paramagnetic Resonance ◽  
Transmission Electron ◽  
Interfacial Defects ◽  
Electron Paramagnetic

AbstractThis paper reports etching results supporting the identification of the SG1 center as a germanium dangling bond defect at the interface between an oxide and crystalline SiGe. The presence of this defect is significant because, like an analogous center in Si-based systems, it may alter the operation of any microelectronic or micro-optical device which incorporates an interface between SiGe and an overlying oxide. The samples examined are oxygen implanted SiGe layers in which the SG1 center is believed to occur at the interface between oxide precipitates and SiGe. Because of the center's apparent relation to the oxide precipitates distributed through layers of the sample, a depth profile assists in confirming the interfacial nature of the defect. We obtain a depth profile by comparing electron paramagnetic resonance (EPR) spectra of samples etched to decreasing thickness. EPR spectra indicate that the SG1 center decreases with depth in a manner that when correlated to a cross sectional transmission electron micrograph confirms the association with SiO2 and supports its location at the SiGe/SiO2 precipitate interface.

Undecagold labeling of tRNA

1991 ◽  
Vol 49 ◽  
pp. 44-45
Author(s):  
James F. Hainfeld ◽  
Kyra M. Alford ◽  
Mathias Sprinzl ◽  
Valsan Mandiyan ◽  
Santa J. Tumminia ◽  
...  
Keyword(s):  
High Resolution ◽  
Transmission Electron Micrograph ◽  
Anticodon Loop ◽  
Electron Micrograph ◽  
Reaction Conditions ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

The undecagold (Au11) cluster was used to covalently label tRNA molecules at two specific ribonucleotides, one at position 75, and one at position 32 near the anticodon loop. Two different Au11 derivatives were used, one with a monomaleimide and one with a monoiodacetamide to effect efficient reactions.The first tRNA labeled was yeast tRNAphe which had a 2-thiocytidine (s2C) enzymatically introduced at position 75. This was found to react with the iodoacetamide-Aun derivative (Fig. 1) but not the maleimide-Aun (Fig. 2). Reaction conditions were 37° for 16 hours. Addition of dimethylformamide (DMF) up to 70% made no improvement in the labeling yield. A high resolution scanning transmission electron micrograph (STEM) taken using the darkfield elastically scattered electrons is shown in Fig. 3.

Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
N. H. Nickel ◽  
E. A. Schiff
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Dangling Bond ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Motional Narrowing ◽  
G Value ◽  
Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

scholarly journals EPR Spectra of Sintered Cd1−xCrxTe Powdered Crystals with Various Cr Content

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3449
Author(s):  
Ireneusz Stefaniuk ◽  
Werner Obermayr ◽  
Volodymyr D. Popovych ◽  
Bogumił Cieniek ◽  
Iwona Rogalska
Keyword(s):  
Curie Temperature ◽  
Room Temperature ◽  
Integral Intensity ◽  
Resonance Field ◽  
Epr Spectra ◽  
Paramagnetic Resonance ◽  
Simple Method ◽  
Paramagnetic Curie Temperature ◽  
Cr Content ◽  
Electron Paramagnetic

In this paper, we show a simple method of producing ferromagnetic materials with a Curie temperature above room temperature. The electron paramagnetic resonance (EPR) spectra of Cd1−xCrxTe (0.002 < x < 0.08) were measured with a dependence on temperature (82 K < T < 381 K). Obtained EPR lines were fitted to a Lorentz-shaped curve. The temperature dependencies of the parameters of the EPR lines, such as the peak-to-peak linewidth (Hpp), the intensity (A), as well as the resonance field (Hr), were studied. Ferromagnetism was noticed in samples at high temperatures (near room temperature). For a sample with a nominal concentration of chrome of x = 0.05, a very strong intrinsic magnetic field is observed. The value of the effective gyromagnetic factor for this sample is ge = 30 at T = 240 K. An increase of chrome concentration above x = 0.05 reduces the ferromagnetic properties considerably. Analysis of the temperature dependencies of the integral intensity of EPR spectra was carried out using the Curie–Weiss law and the paramagnetic Curie temperature was obtained.

The Microscopic Structure Of Shallow Donors In Silicon Carbide

1996 ◽  
Vol 442 ◽  
Author(s):  
J.-M. Spaeth ◽  
S. Greulich-Weber ◽  
M. März ◽  
E. N. Kalabukhova ◽  
S. N. Lukin
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Double Resonance ◽  
Epr Spectra ◽  
Electron Nuclear Double Resonance ◽  
Paramagnetic Resonance ◽  
Vacancy Pair ◽  
Temperature Spectra ◽  
Electron Paramagnetic

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.

Electron Paramagnetic Resonance of Radicals Formed during Milling

1960 ◽  
Vol 33 (2) ◽  
pp. 462-468 ◽  
Author(s):  
S. E. Bresler ◽  
S. N. Zhurkov ◽  
E. N. Kazbekov ◽  
E. M. Saminskiĭ ◽  
E. E. Tomashevskiĭ
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Gamma Rays ◽  
Epr Spectra ◽  
Mechanical Degradation ◽  
Present Communication ◽  
Surface Layers ◽  
Paramagnetic Resonance ◽  
Mechanical Destruction ◽  
Electron Paramagnetic

Abstract It is well known that during the mechanical degradation of polymers there takes place scission of molecular chains and the formation of macroradicals. It is of considerable interest to study the electron paramagnetic resonance (EPR) spectra of the macroradicals produced by milling, and to compare them with the spectra of the macroradicals formed in the process of polymerization, and also during the irradiation of polymers by gamma rays and neutrons. We may endeavor to compare the amount of macroradicals formed with the extent of mechanical destruction (for instance with the area of the new interface which is formed). In addition, as was found by experience, the macroradicals formed by mechanical scission are good models for the investigation of reactivity since practically all of them are in the newly formed surface layers and are therefore very accessible to various chemical influences. They enter easily into reaction with various agents present in the medium since in this process diffusion from the surface is found in practice not to be a predominating factor. In the present communication we give the first EPR results obtained on mechanically degraded polymers.

Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 453-456 ◽  
Author(s):  
T. Umeda ◽  
Norio Morishita ◽  
Takeshi Ohshima ◽  
Hisayoshi Itoh ◽  
Junichi Isoya
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Electron Irradiation ◽  
Electron Paramagnetic Resonance Study ◽  
Dangling Bond ◽  
Charged State ◽  
Paramagnetic Resonance ◽  
Vacancy Pair ◽  
P Type ◽  
Electron Paramagnetic ◽  
Positively Charged

Carbon antisite-vacancy pair (CSiVC) is a fundamental defect in SiC, and is theoretically predicted to be very stable in p-type materials. However, this pair was found only in the form of a negatively charged state (i.e., the SI5 center = CSiVC −) in n-type and semi-insulating 4H-SiC, and yet, its presence has not been shown in p-type SiC. In this report, we present the first EPR observation on positively charged CSiVC pairs in p-type 4H-SiC. By carefully examining p-type samples after electron irradiation, we found a pair of new defects with C3v and C1h symmetries. They correspond to “c-axial” pairs (C3v) and “basal” pairs (C1h) of CSiVC +, respectively. The positively charged pairs are characterized by a strong 13C hyperfine interaction due to a dangling bond on a carbon antisite (CSi), which is successfully resolved for the c-axial pairs.

NANOSEEDING EFFECT IN ZSM-5 CRYSTALLIZATION PROCESS

NANO ◽  
2013 ◽  
Vol 08 (03) ◽  
pp. 1350027
Author(s):  
YI LU ◽  
NAI-QIAN ZHANG ◽  
QIN TONG ◽  
JIN-KU LIU ◽  
DAN-JING HONG
Keyword(s):  
Crystallization Process ◽  
Nitrogen Adsorption ◽  
Particle Size Effect ◽  
Isomerization Reaction ◽  
Transmission Electron Micrograph ◽  
Electron Micrograph ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Induction System ◽  
Temperature Programmed

ZSM-5 zeolites were hydrothermally synthesized in three different seeding pathways under the direction of tetrapropylammonium bromide (TPABr) template. In order to investigate the seeding effect in ZSM-5 crystallization process, ZSM-5 crystals and pre-fabricated MFI-type nanoseeds were added into the original self-induction system, respectively. The final ZSM-5 zeolites were systematically investigated based on XRD (X-ray diffraction), SEM (scanning electron micrograph), TEM (transmission electron micrograph), nitrogen adsorption characterizations and NH3 -TPD (ammonia-temperature programmed desorption). The self-induction system produced ca. 20 μm ZSM-5 zeolite displaying hexagonally uniform prisms. After the addition of ZSM-5 crystal seeds, the crystal sizes were decreased greatly to ca. 5 μm. When MFI-type nanoseeds were adopted, irregular aggregate particles consisting of 20–50 nm primary particles were rapidly synthesized. The varied hydrothermal crystallization kinetics of the three synthesis system was also explored. Adjusting the seed agents alone, ZSM-5 crystals with diverse structural, morphological, textural and hydrothermal behaviors could be fabricated conveniently. The three ZSM-5 zeolites loaded by 0.05 wt.% Pt were assessed for the xylene isomerization reaction to investigate the particle size effect on the catalytic properties.

Sign in / Sign up

Export Citation Format

Share Document