Scanning Electron Microscopy (Sem), Transmission Electron Microscopy (Tem) and Secondary Ion Mass Spectroscopy (Sims) Characterization of the Morphology of Aluminum Bond Pads for Surface Reflectivity Applications.

1995 ◽  
Vol 406 ◽  
Author(s):  
M. Schade ◽  
R. Ai ◽  
Y. Stein ◽  
T. Anderson

AbstractExtreme variations in surface reflectivity/topography have been observed on silicon wafers with evaporated aluminum metallization following thermal annealing processes. Such topographic variations negatively impacted the performance of wire bonder pattern recognition systems. It was proposed that this variation was attributed to differences in deposition rates during evaporation of the aluminum front metallization. SEM analysis revealed that the topographically rough sites, deemed as normal for this processing sequence, had large numbers of hillocks, while the smooth sites exhibited limited numbers of hillocks after heat treatment. SIMS depth profiling analyses did not indicate that any elemental difference existed between the smooth and the rough sites, although interfacial differences were detected. Specifically, the Al-Si interface for the rough surface was more graded in nature while the Al-Si interface for the smooth surface was more abrupt. TEM analysis of the rough sites revealed that a three-dimensional island growth mechanism prevailed during film growth, resulting in uneven surface development, whereas analysis of the smooth sites showed a columnar grain structure.

2006 ◽  
Vol 21 (6) ◽  
pp. 1467-1475 ◽  
Author(s):  
U. Tilliander ◽  
H. Bergqvist ◽  
S. Seetharaman

Because of the applications for W/Cu composite materials in high technology, the advantages of synthesizing this alloy by the hydrogen reduction route were investigated, with special attention to the properties of the product that was formed. Kinetic studies of reduction indicated that the mechanism changes significantly at 923 K, and the product had unusual properties. In the present work, morphological studies of the W/Cu alloy with 20 wt% Cu, produced at 923 K, were carried out by x-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) analyses. The structural studies performed by XRD indicated that, at 923 K, Cu dissolved in W, forming a metastable solid solution in the nanocrystalline state. The samples produced at higher as well as lower temperatures, on the other hand, showed the presence of two phases, pure W and pure Cu. The SEM results were in agreement with the XRD analysis and confirmed the formation of W/Cu alloy. TEM analysis results confirmed the above observations and showed that the particle sizes were about 20 nm. The structure of the W/Cu alloy produced in the present work was compared with those for pure Cu, produced from Cu2O produced by hydrogen reduction under similar conditions. This indicated that the presence of W hinders the coalescence of Cu particles, and the alloy retains its nano-grain structure. The present results open up an interesting process route toward the production of intermetallic phases and composite materials under optimized conditions.


2015 ◽  
Vol 713-715 ◽  
pp. 2585-2589
Author(s):  
Xiao Zheng Yu

The morphologies of nanocrystalline nickel film coated on cenosphere particles using magnetron sputtering method were investigated by atomic force microscopy (AFM). The AFM results show the grain sizes and root-mean-square (RMS) roughness values of nickel films increase with the increase of sputtering power or deposition time and the nickel films growth is a three-dimensional island growth mode. The unceasingly variational angular distribution can get rid of the physical shadowing effect of the sputtering and promote a rather smooth film growth. Due to the all-around effect, the final distribution of grains shows a rather smooth morphology with low roughness.


1992 ◽  
Vol 260 ◽  
Author(s):  
K. L. Westra ◽  
D. J. Thomson

ABSTRACTAtomic Force microscopy, scanning electron microscopy, and transmission electron microscopy was used to study Al/Si/Cu films sputter deposited at 2 and 45 mTorr. AFM and SEM analysis shows the films to consist of columnar structures commonly seen in PVD deposited thin films, while the TEM analysis showed the films be polycrystalline. Comparing the columnar structures seen in the AFM and SEM study to the grains found in the TEM study, we conclude that the columns consist of single grains. Thus for these films AFM or SEM analysis can be used to determine the grain size. Finally, an AFM scan of a Al/Si/Cu deposited via was performed. The AFM image clearly shows the high resolution of the AFM, while it also illustrates the problems caused by the finite size of the AFM tip.


1999 ◽  
Vol 06 (05) ◽  
pp. 775-780 ◽  
Author(s):  
Y. W. KIM ◽  
G. A. WHITE ◽  
N. R. SHIVAPARAN ◽  
M. A. TETER ◽  
R. J. SMITH

The structure of thin Ti films grown on Al(111) surfaces at room temperature has been studied using high energy ion scattering/channeling (HEIS), X-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), low energy electron diffraction (LEED) and X-ray photoelectron diffraction (XPD). Our results show that Ti grows in the SK mode on the Al(111) surface. Ti atoms form a two-dimensional overlayer up to a deposition of about 2 ML Ti, followed by three-dimensional island growth with additional Ti deposition. The Ti islands cover the surface completely at about 12 ML of Ti deposition. XPD results show that the Ti overlayer has a well-ordered hcp Ti(0001) structure on the fcc Al(111) surface, in remarkable contrast to the fcc Ti film growth observed on Al(001) and Al(110) surfaces.


1992 ◽  
Vol 280 ◽  
Author(s):  
J. P. Li ◽  
A. J. Steckl

ABSTRACTIn this paper the nucleation mechanisms for SiC thin film growth are studied by rapid thermal CVD and atomic force microscopy (AFM). The nucleation mode was found to be strongly dependent on the hydrocarbon partial pressure in the gas stream, for a fixed reaction time. In the case of three-dimensional (island) growth at low precursor concentration, cross-sectional SEM micrographs indicate that no voids are present at the center of each nucleus (or island). Voids begin to form when two neighboring nuclei come in contact. AFM has shown that trenches are present in the Si substrate around each isolated nucleus. The trench depth increases with the diameter of the island. AFM analysis of films grown for a nominal reaction time of 1 sec at different propane concentrations indicates that: (1) SiC grain size and surface roughness decreases with increasing propane concentration; (2) SiC grain density increases with increasing propane concentration. Based on the above evidence, the following nucleation mechanism is proposed: (a) the initial nucleation density is determined by the precursor concentration in the reaction gas; b) each nucleus grows larger, both laterally and vertically, by consuming Si around it; (c) voids are formed when nuclei grow large enough to come in contact, and not at the original nucleation sites.


2007 ◽  
Vol 18 (4) ◽  
pp. 320-323 ◽  
Author(s):  
Ii-sei Watanabe ◽  
Koichi Ogawa ◽  
Marcelo Cavenaghi Pereira da Silva ◽  
Aracy Akiko Motoyama ◽  
Eduardo Shigueaki Kado ◽  
...  

Togue mucosa surface of 3-day postnatal rats was examined under transmission electron microscopy (TEM) and high-resolution scanning electron microscopy (HRSEM). For HRSEM analysis, the specimens were fixed in the same solution for 24 h, postfixed in 2% osmiun tetroxide, critical-point dried and coated with platinum-palladium. For TEM analysis, the specimens were fixed using modified Karnovsky solution and embedded in Spurr resin. The results revealed the presence of numerous microplicae in the membrane surface of keratinized epithelial cells to which groups of bacteria were attached. These bacteria were staphylococcus and coccus organized either in rows or at random, which were visualized in three-dimensional HRSEM images. At high magnification, the TEM images revealed the adhesion of bacteria to the cell membrane through numerous filamentous structures comprising the glycocalyx. The fine fibrillar structures rising from each bacterium and from cell membrane were clearly seen. These characteristics on bacteria structure may be used for future control or prevention of bacterial diseases and for installation of the oral native flora.


1998 ◽  
Vol 13 (3) ◽  
pp. 693-702 ◽  
Author(s):  
Thomas Wagner

Epitaxial Nb thin films were grown via molecular beam epitaxy (MBE) at different substrate temperatures on α–Al2O3(0001) substrates. For temperatures of 900 °C to 1100 °C, it was found that Nb grows in the Volmer–Weber growth mode (formation of three-dimensional crystallites). Depending on the growth temperature, different epitaxial orientations of Nb films can be found. At a growth temperature of 900 °C, the Nb{111} planes are parallel to the sapphire basal plane whereas at 1100 °C the Nb grows with the {110} planes on the basal plane of sapphire. These orientations are present even in the initial stages of growth at both temperatures. The formation of two different epitaxial orientations of thick Nb films can be conclusively explained only by considering both the change in the total density of Nb islands with temperature and the influence of island size on the total energy of the islands. The Nb island growth process has been investigated in situ using reflection high energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). Scanning electron microscopy (SEM), x-ray diffraction (XRD), and transmission electron microscopy (TEM) were employed to determine the morphology and structure of Nb islands, Nb films, and Nb/α–Al2O3 interfaces.


Author(s):  
Hua Younan ◽  
Shen Yue ◽  
Chen Yixin ◽  
Fu Chao ◽  
Li Xiaomin

Abstract In authors’ previous paper, an OSAT [Optical, SEM (Scanning Electron Microscopy), Auger (Auger Electron Spectroscopy) and TEM (Transmission Electron Microscopy)] methodology was developed for qualification of microchip aluminum (Al) bondpads. Using the OSAT methodology, one can qualify microchip Al bondpads. In this paper, we will further study the NSOP (Non-Stick On Pad) problem on microchip Al bondpads. A new qualification methodology, OSSD [(Optical, SEM, and Surface and Depth profiling X-ray Photoelectron Spectroscopy (XPS)] will be proposed, in which XPS surface analysis is used to check the contamination level of fluorine and carbon on bondpad surfaces instead of Auger analysis. XPS depth profiling analysis will also be used to measure Al oxide thickness instead of TEM analysis. By using OSSD, Al bondpads can be qualified with both reduced costs and shortened turnaround times versus OSAT.


2012 ◽  
Vol 518-523 ◽  
pp. 740-745 ◽  
Author(s):  
Zhan Ying Zhang ◽  
Yan Wei Li ◽  
Guang Sun ◽  
Feng Xiao Qi ◽  
Nai Teng Wu ◽  
...  

ZnO hierarchical microstructures with uniform flower-like morphology were successfully prepared on a large scale through a carboxymethylcellulose sodium (CMC)-assisted hydrothermal route. X-ray powder diffraction (XRD) measurement confirmed the formation of wurtzite-structured ZnO phase. Field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) analysis indicated that the as-prepared ZnO sample was composed of numerous three dimensional flower-like microstructures, each of which was assembled by nanosheets with the thickness of about 40 nm. High-resolution transmission electron microscopy (HRTEM) measurement revealed the good crystallinity nature of the ZnO nanosheets in the flower-like microstructures. The formation mechanism and photocatalytic property of the as-prepared flower-like ZnO hierarchical microstructures were studied.


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