Electron Density Effects in the Modulation Spectroscopy of Strained and Lattice-Matched InGaAs/InAlAs/InP HEMTs.

1995 ◽  
Vol 406 ◽  
Author(s):  
A. Dimoulas ◽  
J. Davidow ◽  
K. P. Giapis ◽  
A. Georgakilas ◽  
G. Halkias ◽  
...  
Keyword(s):  
Electron Density ◽  
Room Temperature ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Optical Transitions ◽  
Temperature Analysis ◽  
Space Filling ◽  
High Electron Mobility ◽  
Modulation Spectroscopy ◽  
Lattice Matched

AbstractThe effects of the channel electron density on the interband optical transitions of strained (x = 0.6 and 0.65) and lattice-matched (x = 0.53) lnxGa1−xAs/In0.52Al0.48As/InP high electron mobility transistor structures have been investigated by phototransmittance at room temperature. Analysis of the ground and first excited transitions for low and high densities, respectively, enabled a separate estimation of the electron densities occupying each one of the first two subbands. It was found necessary to include the modulation of the phase-space filling in the analysis of the spectra, especially for the samples with a high electron density, in which case this mechanism becomes dominant.

Characterization of Pseudomorphic Hemt Structures by Modulation Spectroscopy

1993 ◽  
Vol 324 ◽  
Author(s):  
A. Dimoulas ◽  
K. Zekentes ◽  
M. Androulidaki
Keyword(s):  
Electron Density ◽  
Room Temperature ◽  
State Transition ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Modulation Spectroscopy ◽  
Lineshape Analysis ◽  
Fermi Edge ◽  
Fermi Edge Singularity

AbstractPhototransmittance has been used to investigate several pseudomorphic Al0.32Ga0.68As/In0.15Ga0.85As/GaAs high electron mobility transistor structures, with different values of the electron density ns. A lineshape analysis of the ground state transition made it possible to estimate ns, at room temperature. A signal from the Fermi-edge singularity (a manybody effect), was observed at low temperatures and the dependence of its intensity on temperature and electron density was examined.

Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Room-Temperature Gas Detection

2020 ◽  
Vol MA2020-01 (31) ◽  
pp. 2319-2319
Author(s):  
Zhixiang Hu ◽  
Jingyao Liu ◽  
Licheng Zhou ◽  
Long Li ◽  
Yunong Zhao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Mobility ◽  
Room Temperature ◽  
High Electron Mobility Transistor ◽  
Gas Detection ◽  
High Electron ◽  
High Electron Mobility
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