scholarly journals Electron density effects in the modulation spectroscopy of strained and lattice‐matched InGaAs/InAlAs/InP high‐electron‐mobility transistor structures

1996 ◽  
Vol 80 (6) ◽  
pp. 3484-3487 ◽  
Author(s):  
A. Dimoulas ◽  
J. Davidow ◽  
K. P. Giapis ◽  
A. Georgakilas ◽  
G. Halkias ◽  
...  
Keyword(s):  
Electron Density ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Modulation Spectroscopy ◽  
Density Effects ◽  
Lattice Matched

Electron Density Effects in the Modulation Spectroscopy of Strained and Lattice-Matched InGaAs/InAlAs/InP HEMTs.

1995 ◽  
Vol 406 ◽  
Author(s):  
A. Dimoulas ◽  
J. Davidow ◽  
K. P. Giapis ◽  
A. Georgakilas ◽  
G. Halkias ◽  
...  
Keyword(s):  
Electron Density ◽  
Room Temperature ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Optical Transitions ◽  
Temperature Analysis ◽  
Space Filling ◽  
High Electron Mobility ◽  
Modulation Spectroscopy ◽  
Lattice Matched

AbstractThe effects of the channel electron density on the interband optical transitions of strained (x = 0.6 and 0.65) and lattice-matched (x = 0.53) lnxGa1−xAs/In0.52Al0.48As/InP high electron mobility transistor structures have been investigated by phototransmittance at room temperature. Analysis of the ground and first excited transitions for low and high densities, respectively, enabled a separate estimation of the electron densities occupying each one of the first two subbands. It was found necessary to include the modulation of the phase-space filling in the analysis of the spectra, especially for the samples with a high electron density, in which case this mechanism becomes dominant.

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer
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