Damage, Strain and Quantum Confinement Issues in Dry Etched Semiconductor Nanostructures

1995 ◽  
Vol 405 ◽  
Author(s):  
Y. S. Tang ◽  
C. M. Sotomayor Torres
Keyword(s):  
Quantum Wells ◽  
Residual Strain ◽  
Quantum Confinement ◽  
Quantum Wires ◽  
Growth Direction ◽  
Semiconductor Nanostructures ◽  
Multiple Quantum ◽  
Strain Component ◽  
Device Applications ◽  
Electron Beam Patterning

AbstractSemiconductor quantum wires and dots have been fabricated in GaAs/AlGaAs, CdTe/CdMnTe and Si/SiGe multiple quantum wells using electron beam patterning and reactive ion etching and studied by photoreflectance, photoluminescence and Raman scattering. It was found that the smaller the lateral size of the nanostructure, the smaller the fabrication induced residual strain. In all cases, the dominant strain component is found to be parallel to the sample growth direction, i.e., along the etched sidewalls of the etched wires and dots. The lateral confining potential is found to be quasi-parabolic for polar semiconductor systems. Possible ways of using and controlling the damage and residual strain in nanostructures are discussed in the context of device applications of nanostructures.

Formation of Quantum Wires by Strain-Induced Lateral-Layer Ordering Process: Growth Mechanism and Device Applications

1995 ◽  
Vol 417 ◽  
Author(s):  
K. Y. Cheng ◽  
K. C. Hsieh
Keyword(s):  
Quantum Wells ◽  
Quantum Wires ◽  
Active Regions ◽  
Growth Direction ◽  
Single Step ◽  
Composition Modulation ◽  
Gaas Substrates ◽  
Straightforward Method ◽  
Device Applications ◽  
Substrate Patterning

AbstractGaxIn1−xAs and GaxIn1−xP quantum wire (QWR) arrays were grown by a single-step molecular beam epitaxy. Lateral Ga(In composition modulation perpendicular to the growth direction occurs spontaneously during the growth of (GaAs)m/(InAs)n or (GaP)m/(InP)n shortperiod superlattices on InP or GaAs substrates, respectively, by the strain-induced lateral-layer ordering (SILO) process, producing lateral quantum wells. This straightforward method employs standard on-axis (001)-oriented substrates, and requires no pre-growth substrate patterning, nor does it involve post-growth processing for the formation of QWRs. Both GaxIn1−xAs infrared (1.7 μm) lasers and GaxIn1−xP visible (0.7 μm) lasers with QWR active regions have been successfully fabricated. These lasers showed many unique features that have never been observed in quantum well lasers.

scholarly journals Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Dongha Yoo ◽  
Keundong Lee ◽  
Youngbin Tchoe ◽  
Puspendu Guha ◽  
Asad Ali ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum ◽  
Controlled Growth ◽  
Light Emitting ◽  
Graphene Films ◽  
Device Applications ◽  
Electron Microscopes ◽  
Cu Foil ◽  
Foil Substrate

AbstractThis paper describes the fabrication process and characteristics of dimension- and position-controlled gallium nitride (GaN) microstructure arrays grown on graphene films and their quantum structures for use in flexible light-emitting device applications. The characteristics of dimension- and position-controlled growth, which is crucial to fabricate high-performance electronic and optoelectronic devices, were investigated using scanning and transmission electron microscopes and power-dependent photoluminescence spectroscopy measurements. Among the GaN microstructures, GaN microrods exhibited excellent photoluminescence characteristics including room-temperature stimulated emission, which is especially useful for optoelectronic device applications. As one of the device applications of the position-controlled GaN microrod arrays, we fabricated light-emitting diodes (LEDs) by heteroepitaxially growing InxGa1−xN/GaN multiple quantum wells (MQWs) and a p-type GaN layer on the surfaces of GaN microrods and by depositing Ti/Au and Ni/Au metal layers to prepare n-type and p-type ohmic contacts, respectively. Furthermore, the GaN microrod LED arrays were transferred onto Cu foil by using the chemical lift-off method. Even after being transferred onto the flexible Cu foil substrate, the microrod LEDs exhibited strong emission of visible blue light. The proposed method to enable the dimension- and position-controlled growth of GaN microstructures on graphene films can likely be used to fabricate other high-quality flexible inorganic semiconductor devices such as micro-LED displays with an ultrahigh resolution.

GaSb/InGaAsSb/GaSb SINGLE AND MULTIPLE QUANTUM WELLS: OPTICAL PROPERTIES ENGINEERING AND APPLICATION

2007 ◽  
Vol 06 (05) ◽  
pp. 315-318 ◽  
Author(s):  
A. A. KOVALYOV ◽  
O. P. PCHELYAKOV ◽  
V. V. PREOBRAZHENSKII ◽  
M. M. PUTYATO ◽  
N. N. RUBTSOVA ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Quantum Confinement ◽  
Multiple Quantum Wells ◽  
Saturable Absorption ◽  
Multiple Quantum ◽  
Transmission Spectra ◽  
Single Quantum Well ◽  
Mbe Growth ◽  
High Reflection

MBE growth of GaSb / InGaAsSb / GaSb heterostructures of high crystal quality is performed under continual RHEED control. Transmission spectra of the films forming multiple quantum wells in λ ≈ 2–3 μm region confirm possibility to control optical properties of the structures through quantum confinement and through the content of semiconductor elements. New design of saturable absorption semiconductor mirror (SESAM) for Cr 2+: ZnSe laser is proposed and manufactured on the base of the single quantum well GaSb / InGaAsSb / GaSb placed between dielectric antireflection and broadband high reflection coatings.

Magneto-Optical Study of Reduced Deimensionality and Quantum Confinement in CdTe/MnTe Multiple Quantum Wells

1993 ◽  
Vol 32 (S3) ◽  
pp. 408
Author(s):  
Yutaka Takeuchi ◽  
Koji Ando ◽  
Hiroyuki Akinaga ◽  
Takashi Abe ◽  
Hiroshi Yamamoto
Keyword(s):  
Quantum Wells ◽  
Quantum Confinement ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Study

TIGHT-BINDING METHOD FOR QUANTUM-CONFINEMENT ENERGY CALCULATIONS IN THE CdSe/ZnSe MULTIPLE QUANTUM WELLS

2008 ◽  
Vol 19 (11) ◽  
pp. 1635-1645
Author(s):  
NACIR TIT ◽  
IHAB M. OBAIDAT
Keyword(s):  
Quantum Wells ◽  
Quantum Confinement ◽  
Bound States ◽  
Energy Levels ◽  
Tight Binding ◽  
Relevant Information ◽  
Physical Models ◽  
Multiple Quantum Wells ◽  
Bandgap Energy ◽  
Multiple Quantum

We present an efficient method to calculate the quantum-confinement energy of charge carriers in the ( ZnSe )M( CdSe )N (001) multiple quantum wells (MQW). The method is based on the 3D empirical sp3s* tight-binding models, which include the spin-orbit coupling. The method can handle large systems while it takes account of the band mixing caused by the strain and confinement. In these perspectives, it proves itself more reliable than the traditional effective-mass approach (EMA) by further generating more relevant information about the quantum states localized within the wells; in particular, the number of bound states and their energy levels and their corresponding wavefunctions were obtained based on more realistic physical models. The quantum-confinement energy, bandgap energy, and band structures are studied versus the CdSe well width (N). The results are found to be comparable with those experimentally obtained using photoluminescence.

scholarly journals Effect of quantum confinement on acceptor state lifetime in Be δ doped GaAs/AlAs multiple quantum wells

2009 ◽  
Vol 58 (9) ◽  
pp. 6471
Author(s):  
Song Ying-Xin ◽  
Zheng Wei-Min ◽  
Liu Jing ◽  
Chu Ning-Ning ◽  
Li Su-Mei
Keyword(s):  
Quantum Wells ◽  
Quantum Confinement ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Acceptor State

High Pressure Optical Studies of GaSb-AlSb Multiple Quantum Wells

1989 ◽  
Vol 160 ◽  
Author(s):  
Benjamin Rockwell ◽  
H.R. Chandrasekhar ◽  
Meera Chandrasekhar ◽  
Fred H. Pollak ◽  
H. Shen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Confinement ◽  
Plane Deformation ◽  
Multiple Quantum Well ◽  
External Pressure ◽  
Multiple Quantum ◽  
Cryogenic Temperatures ◽  
Optical Studies ◽  
Pressure Coefficients ◽  
Band Transition

AbstractThe pressure coefficients (α) of the excitonic transitions arising from the conduction (CB) to the heavy (HH) and light (LH) hole sub-bands of a GaSb-AlSb multiple quantum well structure (MQW) grown on a GaAs substrate are determined. Photoreflectance (PR) and Photoluminescence (PL) studies are employed at cryogenic temperatures. The α for the ground sub-band transition is ~10% smaller than that for bulk GaSb. This effect is explained by in-plane deformation of the MQW arising from the substrate under external pressure. On the other hand, the α get progressively smaller for the higher sub-band transitions due to quantum confinement The PL intensity drops dramatically as the direct Γ CB crosses the L CB at ~10kBars but the PR intensity persists until the X CB crosses each sub-band energy.

The quantum confinement effect observed in the multiple quantum wells Mg0.27Zn0.73O/ZnO

Laser Physics ◽  
2011 ◽  
Vol 21 (3) ◽  
pp. 582-587 ◽  
Author(s):  
A. A. Lotin ◽  
O. A. Novodvorsky ◽  
L. S. Parshina ◽  
E. V. Khaydukov ◽  
O. D. Khramova ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Confinement Effect ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

RECENT DEVELOPMENTS ON ELECTRON-PHONON INTERACTIONS IN STRUCTURES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES

1998 ◽  
Vol 09 (01) ◽  
pp. 281-312 ◽  
Author(s):  
M. DUTTA ◽  
M. A. STROSCIO ◽  
K. W. KIM
Keyword(s):  
Quantum Wells ◽  
Quantum Wires ◽  
Quantum Cascade Lasers ◽  
Optoelectronic Devices ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Phonon Modes ◽  
Cross Sectional ◽  
Device Applications ◽  
Dielectric Continuum

As device dimensions in electronic and optoelectronic devices are reduced, the characteristics and interactions of dimensionally-confined longitudinal-optical (LO) and acoustic phonons deviate substantially from those of bulk semiconductors. Furthermore, as würtzite materials are applied increasingly in electronic and optoelectronic devices it becomes more important to understand the phonon modes in such systems. This account emphasizes the properties of bulk optical phonons in würtzite structures, the properties of LO-phonon modes and acoustic-phonon modes arising in polar-semiconductor quantum wells, superlattices, quantum wires and quantum dots, with a variety of cross sectional geometries and, lastly, the properties of optical phonons in würtzite materials as predicted by the dielectric continuum model. Emphasis is placed on the dielectric continuum and elastic continuum models of bulk, confined and interface phonons. This article emphasizes device applications of confined phonons in GaAs-based systems and provides a brief discussion of carrier-LO-phonon interactions in bulk würtzite structures. This account also includes discussions on the use of metal-semiconductor heterointerfaces to reduce scattering and on the role of phonons in Fröhlich, deformation and piezoelectric interactions in electronic and optoelectronic structures; specific device applications high-lighted here include quantum cascade lasers, mesoscopic devices, thermoelectric devices and optically-pumped resonant intersubband lasers.

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