Rheed Intensity Observation of AlAs and GaAs by in situ Etching Using Arsenic Tribromide

1995 ◽  
Vol 405 ◽  
Author(s):  
T. Kaneko ◽  
T. Säger ◽  
K. Eberl
Keyword(s):  
Low Temperatures ◽  
Reaction Rate ◽  
Etching Rate ◽  
Layer By Layer ◽  
Supply Rate ◽  
Limited Region ◽  
Continuous Increase ◽  
Higher Temperature ◽  
Rate Limiting

AbstractThe first in situ layer-by-layer etching of AlAs(100) surfaces has been observed by using RHEED intensity oscillations technique and is contrasted with the results obtained for the etching of GaAs(100). The experiments were conducted by introducing the etchant, arsenic tribromide, directly into a conventional MBE chamber without the use of any carrier gas. RHEED intensity oscillations during the etching of AlAs are observed between 350 and 760°C indicating a continuous increase in the etching rate with temperatures, with no supply rate limiting conditions being reached. Conversely, oscillations from GaAs reveal a reaction rate limited region at low temperatures (≤500°C) and a supply rate limited region at higher temperature(>500°C). The maximum selectivity in the etching rates between GaAs and AlAs is obtained at 450°C (40:1). The selectivity, and the ability to monitor the layer-by-layer process by RHEED intensity oscillations is foreseen to be of great importance for more controlled fabrications of AlAs and GaAs heterointerfaces.

In-Situ High Temperature Optical Microscopic Observations of Crystallization Mechanism in NdBa2Cu3Ox

1999 ◽  
Vol 569 ◽  
Author(s):  
D.K. Aswal ◽  
M. Shinmura ◽  
Y Hayakawa ◽  
M. Kumagawa
Keyword(s):  
High Temperature ◽  
Cooling Rate ◽  
Liquidus Line ◽  
Solute Diffusion ◽  
Limiting Factor ◽  
Layer By Layer ◽  
Temperature Solution ◽  
In Situ Observations ◽  
Rate Limiting

ABSTRACTThe pseudo-binary NdBa2Cu3O-Ba3Cu10O13phase diagrams and the crystallization of NdBa2Cu3Ox have been in-situ observed using high-temperature optical microscopy in air and under three different reduced oxygen atmospheres namely, 1%, 0.1% and 0.0097% oxygen in argon. The liquidus line was found to become narrower both in composition and temperature with reducing oxygen content in the atmosphere. These results suggested that while in air NdBa2Cu3Ox can be crystallized from both high-temperature solution and peritectic melt; under reduced oxygen atmospheres the crystallization of NdBa2Cu3Ox is only possible from a peritectic melt. The in-situ observations of crystallization of NdBa2Cu3Ox from high-temperature solutions revealed that the growth mechanism changes from 3D via 2D layer-by-layer to continuos dendritic growth with increasing cooling rate. On the other hand, the NdBa2Cu3Ox crystallization from a peritectic melt involved two distinct steps (i) conversion of Nd4Ba2Cu2Ox into NdBa2Cu3Ox and (ii) nucleation and growth of NdBa2Cu3Ox The growth morphology in this case was independent of the cooling rate. This result and the direct observation of the dissolution of Nd4Ba2Cu2Ox into the liquid suggested that the solute diffusion is the rate-limiting factor.

In situ bioaugmentation of nitrification in the regeneration zone: practical application and experiences at full-scale plants

2006 ◽  
Vol 53 (12) ◽  
pp. 39-46 ◽  
Author(s):  
O. Krhutková ◽  
L. Novák ◽  
L. Pachmanová ◽  
A. Benáková ◽  
J. Wanner ◽  
...  
Keyword(s):  
Activated Sludge ◽  
Low Temperatures ◽  
Wastewater Treatment Plants ◽  
Winter Season ◽  
Practical Application ◽  
The Common ◽  
Low Performance ◽  
Negative Factors ◽  
Rate Limiting

Nitrification is the rate-limiting process in the design of activated sludge process. It is especially unstable during the winter season (when the temperature of activated sludge mixed liquor drops below 13 °C). It is therefore difficult to meet the ammonia effluent standards in winter. The common way to compensate for low nitrification rates at low temperatures is to increase sludge retention time (SRT). However, the increase of SRT is accompanied by negative factors such as elevated sludge concentration, higher sludge loading of secondary clarifiers, formation of unsettleable microflocs, etc. The low performance of nitrification at low temperatures can also be compensated for by enhancing the nitrification population in activated sludge. This paper describes such a method called bioaugmentation of nitrification in situ. This procedure takes place in a so-called regeneration tank, which is situated in the return activated sludge stream. The results of the operation of two wastewater treatment plants with regeneration zones are described in this paper, together with some economic evaluation of the bioaugmentation method.

In situ Tensile Experiments at Low Temperatures on Niobium Single Crystals by H.V.E.M.

1975 ◽  
Vol 33 ◽  
pp. 58-59
Author(s):  
F. H. Louchet ◽  
L. P. Kubin
Keyword(s):  
Electron Microscope ◽  
Transition Temperature ◽  
Low Temperature ◽  
Slip System ◽  
Low Temperatures ◽  
Tensile Axis ◽  
Image Intensifier ◽  
Screw Dislocations ◽  
Source Operation

Experiments have been carried out on the 3 MeV electron microscope in Toulouse. The low temperature straining holder has been previously described Images given by an image intensifier are recorded on magnetic tape.The microtensile niobium samples are cut in a plane with the two operative slip directions [111] and lying in the foil plane. The tensile axis is near [011].Our results concern:- The transition temperature of niobium near 220 K: at this temperature and below an increasing difference appears between the mobilities of the screw and edge portions of dislocations loops. Source operation and interactions between screw dislocations of different slip system have been recorded.

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

“In-Situ Raman Spectroscopy of Electronic Processes in Fullerene Thin Films

2002 ◽  
Vol 725 ◽  
Author(s):  
S.B. Phelan ◽  
B.S. O'Connell ◽  
G. Farrell ◽  
G. Chambers ◽  
H.J. Byrne
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Low Temperatures ◽  
In Situ Raman Spectroscopy ◽  
State Reduction ◽  
In Situ Raman ◽  
Linear Behavior ◽  
Current Voltage ◽  
Solid State Reduction

AbstractThe current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.

Oblique-incidence Reflectivity Difference (OI-RD) and Leed Studies of Adsorption and Growth of Xe on Nb(110)

2003 ◽  
Vol 780 ◽  
Author(s):  
P. Thomas ◽  
E. Nabighian ◽  
M.C. Bartelt ◽  
C.Y. Fong ◽  
X.D. Zhu
Keyword(s):  
Transition Layer ◽  
Layer Growth ◽  
Flow Mode ◽  
Layer By Layer ◽  
Zeroth Order ◽  
Step Flow ◽  
Low Energy Electron Diffraction ◽  
Oriented Film ◽  
Low Energy Electron

AbstractWe studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.

Monitoring Polymer-Assisted Mechanochemical Cocrystallisation Through in Situ X-Ray Powder Diffraction

2020 ◽  
Author(s):  
Luzia S. Germann ◽  
Sebastian T. Emmerling ◽  
Manuel Wilke ◽  
Robert E. Dinnebier ◽  
Mariarosa Moneghini ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Powder Diffraction ◽  
Reaction Rate ◽  
Polymer Additives ◽  
Time Resolved ◽  
X Ray

Time-resolved mechanochemical cocrystallisation studies have so-far focused solely on neat and liquid-assisted grinding. Here, we report the monitoring of polymer-assisted grinding reactions using <i>in situ</i> X-ray powder diffraction, revealing that reaction rate is almost double compared to neat grinding and independent of the molecular weight and amount of used polymer additives.<br>

Application of In Situ X-ray Absorption Spectroscopy to Study Dilute Chromium Ions in a Molten Chloride Salt

2019 ◽  
Author(s):  
Jisue Moon ◽  
Carter Abney ◽  
Dmitriy Dolzhnikov ◽  
James M. Kurley ◽  
Kevin A. Beyer ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Local Structure ◽  
Chloride Salt ◽  
X Ray ◽  
Molten Chloride ◽  
Stable Species ◽  
Higher Temperature ◽  
Cr Concentration ◽  
X Ray Absorption

The local structure of dilute CrCl<sub>3</sub> in a molten MgCl<sub>2</sub>:KCl salt was investigated by <i>in situ</i> x-ray absorption spectroscopy (XAS) at temperatures from room temperature to 800<sup>o</sup>C. This constitutes the first experiment where dilute Cr speciation is explored in a molten chloride salt, ostensibly due to the compounding challenges arising from a low Cr concentration in a matrix of heavy absorbers at extreme temperatures. CrCl<sub>3</sub> was confirmed to be the stable species between 200 and 500<sup>o</sup>C, while mobility of metal ions at higher temperature (>700<sup>o</sup>C) prevented confirmation of the local structure.

Kinetics of carbon monoxide methanation on a Ni/SiO2 catalyst

1990 ◽  
Vol 55 (7) ◽  
pp. 1678-1685
Author(s):  
Vladimír Stuchlý ◽  
Karel Klusáček
Keyword(s):  
Carbon Monoxide ◽  
Reaction Rate ◽  
Catalyst Activity ◽  
Adsorbed Hydrogen ◽  
Reaction Products ◽  
Co Methanation ◽  
Molar Ratios ◽  
Rate Determining Step ◽  
Higher Temperature ◽  
Kinetics Of

Kinetics of CO methanation on a commercial Ni/SiO2 catalyst was evaluated at atmospheric pressure, between 528 and 550 K and for hydrogen to carbon monoxide molar ratios ranging from 3 : 1 to 200 : 1. The effect of reaction products on the reaction rate was also examined. Below 550 K, only methane was selectively formed. Above this temperature, the formation of carbon dioxide was also observed. The experimental data could be described by two modified Langmuir-Hinshelwood kinetic models, based on hydrogenation of surface CO by molecularly or by dissociatively adsorbed hydrogen in the rate-determining step. Water reversibly lowered catalyst activity and its effect was more pronounced at higher temperature.

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