High Quality AlGaAs Regrowth on Oxide-Free AlxGa1-xAs (x=0.26) by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 405 ◽  
Author(s):  
Kun-Jing Lee ◽  
Z. C. Huang ◽  
J. C. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Native Oxide ◽  
Exciton Peak ◽  
Impurity Incorporation ◽  
Oxide Formation ◽  
Metalorganic Chemical

AbstractThe Al0.13Ga0.87As epilayers were regrown by metalorganic chemical vapor deposition (MOCVD) on different AI0.26Ga0.74As substrate layers. It was found that the quality of regrown A10.13Ga0.87As layers were significantly improved when a Se-doped Al0 26Ga0.74As substrate was used. Electrochemical C-V profile showed that no oxide formation and impurity incorporation at the regwon interface. Low-temperature (14.9 K) photoluminescence showed that the full width of half maximum (FWHM) of the bound exciton peak is as low as 4.51 meV. We attributed this improvement to the Se-passivation effect at the surface of Se-doped A10.26Ga0.74As substrate-layers. Results show that Se will delay the formation of native oxide to achieve the better quality of regrown AlGaAs layers.

Film microstructure-deposition condition relationships in the growth of epitaxial NiO films by metalorganic chemical vapor deposition on oxide and metal substrates

1999 ◽  
Vol 14 (3) ◽  
pp. 1132-1136 ◽  
Author(s):  
Anchuan Wang ◽  
John A. Belot ◽  
Tobin J. Marks
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Contamination ◽  
Metal Substrates ◽  
Nio Films ◽  
Metalorganic Chemical

High-quality epitaxial or highly textured NiO thin films can be grown at temperatures of 400–750°C by low-pressure metalorganic chemical vapor deposition (MOCVD) on MgO, SrTiO3, C-cut sapphire, as well as on single crystal and highly textured Ni (200) metal substrates using Ni(dpm)2 (dpm – dipivaloylmethanate) as the volatile precursor and O2 or H2O as the oxidizer/protonolyzer. X-ray diffraction (XRD), scanning electron microscopy/energy dispersive detection (SEM/EDX), and atomic force microscopy (AFM) confirm that the O2-derived NiO films are smooth and that the quality of the epitaxy can be improved by decreasing the growth temperature and/or the precursor flow rate. However, low growth temperatures (400–500 °C) lead to rougher surfaces and carbon contamination. The H2O-derived NiO films, which can be obtained only at relatively high temperatures (650–750 °C), exhibit slightly broader ω scan full width half-maximum (FWHM) values and rougher surfaces but no carbon contamination. Using H2O as the oxidizer/protonolyzer, smooth and highly textured NiO (111) films can be grown on easily oxidized single crystal and highly textured Ni (200) metal substrates, which is impossible when O2 is the oxidizer. The textural quality of these films depends on both the quality of the metal substrates and the gaseous precursor flow rate.

Silicon cross doping and its effect on the Si or Be implantation doping of gallium arsenide grown on (100) silicon by metalorganic chemical vapor deposition

1992 ◽  
Vol 7 (8) ◽  
pp. 2186-2193 ◽  
Author(s):  
B. Molnar ◽  
P. Chi ◽  
D. Simons
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gaas Layer ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Local Vibrational Mode ◽  
Metalorganic Chemical

A study of the cross doping of GaAs layers grown by a two-step metalorganic chemical vapor deposition on Si substrates is reported. All as-grown, unintentionally doped layers of GaAs were n-type, and the carrier profiles tracked the Si atomic profiles. Furnace annealing at 850 °C for 30 min in an arsine overpressure, which is used to improve the crystalline quality of the GaAs near the heterointerface, caused additional Si to diffuse into the GaAs layer. Comparison of the Si concentration at the interface with the carrier concentration suggested the presence of compensating acceptors. Resonance Raman scattering by the SiAs local vibrational mode near the interface shows that a fraction of the Si atoms are localized at the As sites. The furnace annealing increased the Si concentration in the 1.7–1.8 μm thick initially grown GaAs layer. This, in turn, influenced the electrical profiles created with Si or Be implantation on a 2.3 μm thick GaAs layer.

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