High‐reflectivity visible‐wavelength semiconductor native oxide Bragg reflectors grown by metalorganic chemical vapor deposition

1995 ◽  
Vol 66 (21) ◽  
pp. 2831-2833 ◽  
Author(s):  
A. L. Holmes ◽  
M. R. Islam ◽  
R. V. Chelakara ◽  
F. J. Ciuba ◽  
R. D. Dupuis ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Native Oxide ◽  
Bragg Reflectors ◽  
Visible Wavelength ◽  
High Reflectivity ◽  
Metalorganic Chemical

High Quality AlGaAs Regrowth on Oxide-Free AlxGa1-xAs (x=0.26) by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 405 ◽  
Author(s):  
Kun-Jing Lee ◽  
Z. C. Huang ◽  
J. C. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Native Oxide ◽  
Exciton Peak ◽  
Impurity Incorporation ◽  
Oxide Formation ◽  
Metalorganic Chemical

AbstractThe Al0.13Ga0.87As epilayers were regrown by metalorganic chemical vapor deposition (MOCVD) on different AI0.26Ga0.74As substrate layers. It was found that the quality of regrown A10.13Ga0.87As layers were significantly improved when a Se-doped Al0 26Ga0.74As substrate was used. Electrochemical C-V profile showed that no oxide formation and impurity incorporation at the regwon interface. Low-temperature (14.9 K) photoluminescence showed that the full width of half maximum (FWHM) of the bound exciton peak is as low as 4.51 meV. We attributed this improvement to the Se-passivation effect at the surface of Se-doped A10.26Ga0.74As substrate-layers. Results show that Se will delay the formation of native oxide to achieve the better quality of regrown AlGaAs layers.

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