In-Situ Observations of Electromigration-Induced Void Dynamics

1995 ◽  
Vol 404 ◽  
Author(s):  
Richard Frankovic ◽  
Gary H. Bernstein
Keyword(s):  
Integrated Circuit ◽  
Void Growth ◽  
Void Nucleation ◽  
Quantitative Information ◽  
Growth Time ◽  
Time To Failure ◽  
Resolution Electron ◽  
Quantitative Results ◽  
Interconnect Lines

AbstractElectromigration void nucleation and growth is a failure mechanism of integrated circuit (IC) metallization. The time-to-failure of interconnect lines depends on the void nucleation time and the void growth time. While much work has been done to model the void nucleation stage, the current understanding of the void growth stage is minimal. The importance of characterizing the void growth and motion dynamics is essential to further explain electromigration performance of IC metal interconnections.Electromigration-induced voids previously studied have been observed to grow, coalesce, and even heal, but quantitative information on these dynamics is lacking. This work uses high-resolution electron-beam lithography to define sub-micrometer voids of various sizes and shapes into gold lines in order to observe void growth and movement with respect to initial void size and shape. The electromigration-induced dynamic behavior of pre-defined voids was measured in a field-emission scanning electron microscope in-situ. Results showed these prepatterned voids can re-fill or grow, and can yield quantitative results on dynamic void behavior.

In Situ Observations of Pre-Patterned Void Interactions Under Electromigration-Induced Stress

1996 ◽  
Vol 428 ◽  
Author(s):  
Richard Frankovic ◽  
Gary H. Bernstein
Keyword(s):  
Integrated Circuit ◽  
Void Growth ◽  
Growth Stage ◽  
Void Nucleation ◽  
Separation Distance ◽  
Small Dimension ◽  
Growth Time ◽  
Time To Failure ◽  
Void Interaction

AbstractElectromigration (EM) void nucleation and growth is a failure mechanism of integrated circuit (IC) metallization. The time-to-failure of interconnect lines depends on the void nucleation time and the void growth time. The current understanding of the void growth stage is minimal, and characterization of the void growth stage is essential to further explain EM performance of IC metal interconnections. This work used high-resolution electron-beam lithography to define small dimension edge-voids into gold lines at various separation distances from each other, on the same side or opposite sides of the lines. The EM-induced interaction behavior of pre-defined voids was measured in a FESEM in-situ. Results showed that for small separation distances, void-void interaction enabled shape changes in the pre-patterned voids. For larger separation distance, void-void interactions could be characterized by secondary, induced void and hillock area measurements. As the separation distance increased, the void-void interaction diminished, and the voids acted independently of each other.

Statistical Evaluation of Stressmigration Reliability in Al-Cu Interconnects

1998 ◽  
Vol 516 ◽  
Author(s):  
D. Jawarani ◽  
M. Gall ◽  
C. Capasso ◽  
J. Müller ◽  
R. Hernandez ◽  
...  
Keyword(s):  
Void Growth ◽  
Void Nucleation ◽  
Type Equation ◽  
Cumulative Probability ◽  
Diffusion Type ◽  
Time Period ◽  
Measured Resistance ◽  
Data Extrapolation ◽  
Resistance Data

AbstractHigh-resolution resistance measurements of metal stripes have been performed to study void growth during in situ annealing at 180°C. Void growth has been characterized by resistance monitoring over 14,000 hours. During the annealing of Al-lwt%Cu stripes, Cu atoms from solution migrate to grain boundaries to form Al2Cu precipitates leading to a drop in resistance. At the same time, relaxation of tensile stresses in metal stripes takes place in the form of void nucleation and growth, leading to an increase in resistance. The resistance drop due to precipitation was shown to obey Avrami's precipitation kinetics while void growth over this time period obeyed a diffusion-type equation. The resulting equation to describe this physical model was fitted to the measured resistance data. Extrapolation to failure condition (ΔR/R=10%) could therefore be obtained for all the devices under test and plotted on a cumulative probability plot. Using the measured value of activation energy for void growth, stressmigration reliability was then assessed by extrapolation to an operating temperature. Post-mortem microscopy was performed to correlate resistance increase with void density and size in these interconnects. Finite element simulations were performed to calculate resistance increases due to voiding in metal stripes and correlate these with the experimentally obtained data.

A Growth Model of Stress Voids in Integrated Circuit Metallization

1997 ◽  
Vol 473 ◽  
Author(s):  
S. Kordic ◽  
E.J.H. Collart
Keyword(s):  
Integrated Circuit ◽  
Void Growth ◽  
Void Nucleation ◽  
Volume Growth ◽  
Void Volume ◽  
Avrami Equation ◽  
Thermal Expansion Coefficients ◽  
Nucleation Sites ◽  
The Difference ◽  
The Impact

ABSTRACTStress voiding is caused by the difference in the thermal expansion coefficients of the metallization lines and the surrounding passivation. Volumes of individual stress voids are measured as a function of stress time at 200°C, 180°C, and 150°C in 1-μm-wide AlCu(1%wt) integrated circuit metallization lines. The time needed for void growth to saturate, and the total void volume depend on the stress temperature. If the void growth is regarded as an isothermal phase transformation in which voids are formed as precipitates at the void nucleation sites, the void volume growth is accurately described by the Avrami equation. Depending on the temperature, the time power n ranges between 0.5 and 1.5. First principle calculations are in excellent agreement with the measurements. The impact of the above results on electromigration testing is discussed.

Electromigration Voiding in Argon-Implanted Interconnects

1999 ◽  
Vol 563 ◽  
Author(s):  
N. E. Meier ◽  
J. C. Doan ◽  
T. N. Marieb ◽  
P. A. Flinn ◽  
J. C. Bravman
Keyword(s):  
High Voltage ◽  
Energy Barrier ◽  
Void Nucleation ◽  
Nucleation Time ◽  
Thermodynamics And Kinetics ◽  
Nucleation Barrier ◽  
Complex Process ◽  
Argon Ions ◽  
Interconnect Lines

AbstractElectromigration is a complex process consisting of the nucleation, growth, and movement of voids. While interconnect microstructure plays a major role in determining void nucleation time and location of void nucleation, recent studies have shown that this is not the only contributing factor. Thermodynamics and kinetics-based calculations by Flinn and Gleixner et al. have shown that electromigration void nucleation by vacancy condensation at both homogeneous and heterogeneous sites will not occur at a reasonable rate without a mechanism for reducing or altogether eliminating the energy barrier for nucleation. By implanting argon ions into the aluminum interconnect lines, we introduce an initial defect population (argon bubbles) of controlled size and location.Tests were performed in a high-voltage SEM (120 keV), which enables in-situ observation of the voiding process through the passivation layer. Images taken throughout the in-situ tests were analyzed to determine void nucleation times and locations. In the argon-implanted interconnects, ten of the 15 voids that nucleated were within implanted regions. Voids nucleated in the interior of the line within the implanted regions, as well as at the passivation/sidewall interface where voids are typically seen in conventional electromigration tests. In addition, voids in implanted regions nucleated much more quickly than those in unimplanted regions. These observations support the idea of argon bubbles reducing the nucleation barrier. TEM was used to analyze the microstructure of both control and implanted interconnect lines.

In situ microprobe quantitation of inorganic particle burden in paraffin sections of lung tissue

1988 ◽  
Vol 46 ◽  
pp. 990-991
Author(s):  
Jerrold L. Abraham
Keyword(s):  
Lung Tissue ◽  
Quantitative Information ◽  
Particulate Material ◽  
Paraffin Sections ◽  
Tissue Samples ◽  
Qualitative And Quantitative ◽  
The Past ◽  
Quantitative Analyses ◽  
Data Result

Inorganic particulate material of diverse types is present in the ambient and occupational environment, and exposure to such materials is a well recognized cause of some lung disease. To investigate the interaction of inhaled inorganic particulates with the lung it is necessary to obtain quantitative information on the particulate burden of lung tissue in a wide variety of situations. The vast majority of diagnostic and experimental tissue samples (biopsies and autopsies) are fixed with formaldehyde solutions, dehydrated with organic solvents and embedded in paraffin wax. Over the past 16 years, I have attempted to obtain maximal analytical use of such tissue with minimal preparative steps. Unique diagnostic and research data result from both qualitative and quantitative analyses of sections. Most of the data has been related to inhaled inorganic particulates in lungs, but the basic methods are applicable to any tissues. The preparations are primarily designed for SEM use, but they are stable for storage and transport to other laboratories and several other instruments (e.g., for SIMS techniques).

In situ observations of electromigration induced void behavior

1995 ◽  
Vol 53 ◽  
pp. 244-245
Author(s):  
T. Marieb ◽  
J. C. Bravman ◽  
P. Flinn ◽  
D. Gardner ◽  
M. Madden
Keyword(s):  
Electron Microscopy ◽  
Void Nucleation ◽  
Plan View ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Microelectronics Industry ◽  
In Situ Observations ◽  
Backscatter Electron Detector ◽  
Voltage Scanning

Electromigration and stress voiding have been active areas of research in the microelectronics industry for many years. While accelerated testing of these phenomena has been performed for the last 25 years[1-2], only recently has the introduction of high voltage scanning electron microscopy (HVSEM) made possible in situ testing of realistic, passivated, full thickness samples at high resolution.With a combination of in situ HVSEM and post-testing transmission electron microscopy (TEM) , electromigration void nucleation sites in both normal polycrystalline and near-bamboo pure Al were investigated. The effect of the microstructure of the lines on the void motion was also studied.The HVSEM used was a slightly modified JEOL 1200 EX II scanning TEM with a backscatter electron detector placed above the sample[3]. To observe electromigration in situ the sample was heated and the line had current supplied to it to accelerate the voiding process. After testing lines were prepared for TEM by employing the plan-view wedge technique [6].

Micromechanics Measurements Applied to Integrated Circuit Microelectronics

1997 ◽  
Vol 473 ◽  
Author(s):  
David R. Clarke
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Fracture Resistance ◽  
Interface Fracture ◽  
New Techniques ◽  
Fracture Properties ◽  
Engineered Structures ◽  
Mechanical And Fracture Properties ◽  
Interconnect Lines ◽  
Metallic Interconnect

ABSTRACTAs in other engineered structures, fracture occasionally occurs in integrated microelectronic circuits. Fracture can take a number of forms including voiding of metallic interconnect lines, decohesion of interfaces, and stress-induced microcracking of thin films. The characteristic feature that distinguishes such fracture phenomena from similar behaviors in other engineered structures is the length scales involved, typically micron and sub-micron. This length scale necessitates new techniques for measuring mechanical and fracture properties. In this work, we describe non-contact optical techniques for probing strains and a microscopic “decohesion” test for measuring interface fracture resistance in integrated circuits.

scholarly journals Modelling of speleothems failure in the Hotton cave (Belgium). Is the failure earthquake induced?

2001 ◽  
Vol 80 (3-4) ◽  
pp. 315-321 ◽  
Author(s):  
J.F. Cadorin ◽  
D. Jongmans ◽  
A. Plumier ◽  
T. Camelbeeck ◽  
S. Delaby ◽  
...  
Keyword(s):  
Natural Frequencies ◽  
Quantitative Information ◽  
Rigid Bodies ◽  
Tensile Failure ◽  
Future Research ◽  
Geometrical Parameters ◽  
Laboratory Measurements ◽  
Ground Acceleration ◽  
Strong Ground

AbstractTo provide quantitative information on the ground acceleration necessary to break speleothems, laboratory measurements on samples of stalagmite have been performed to study their failure in bending. Due to their high natural frequencies, speleothems can be considered as rigid bodies to seismic strong ground motion. Using this simple hypothesis and the determined mechanical properties (a minimum value of 0.4 MPa for the tensile failure stress has been considered), modelling indicates that horizontal acceleration ranging from 0.3 m/s2 to 100 m/s2 (0.03 to 10g) are necessary to break 35 broken speleothems of the Hotton cave for which the geometrical parameters have been determined. Thus, at the present time, a strong discrepancy exists between the peak accelerations observed during earthquakes and most of the calculated values necessary to break speleothems. One of the future research efforts will be to understand the reasons of the defined behaviour. It appears fundamental to perform measurements on in situ speleothems.

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