Thin Ti/TiN Barriers for Ulsi Application

1995 ◽  
Vol 403 ◽  
Author(s):  
C. K. Huang ◽  
Shi-Qing Wang
Keyword(s):  
Film Thickness ◽  
Physical Vapor Deposition ◽  
Nitride Film ◽  
Film Properties ◽  
Reduced Dimensions ◽  
Aspect Ratios ◽  
Grain Structures ◽  
Diffusion Barrier Layer ◽  
Electrical Resistivities ◽  
Titanium Nitride Film

AbstractIn advanced ULSI devices, Ti (titanium)/TiN (titanium nitride) film stack is commonly used as liner materials. Ti is used to reduce contact/via resistance while TiN is utilized as an adhesion/diffusion barrier layer. Ti/TiN liner with optimized thickness combinations should be used for progressively advanced ULSI devices with features of reduced dimensions and increased aspect ratios in order to effectively reduce contact/via resistance, ensure barrier quality, and maximize cross section of metal conductors with low electrical resistivities. This study evaluates the film properties such as sheet resistance, density, stress, grain structures, and reflectance of individual Ti and TiN, and composite Ti/TiN films manufactured by collimated physical vapor deposition (PVD). The film thickness ranges from 5 to 60nm. The dependence of these properties on the film thickness will be discussed.

Metal Film Thickness Standards

1995 ◽  
Vol 39 ◽  
pp. 707-712
Author(s):  
Craig D. England ◽  
Laurie Bechder ◽  
Steve Zierer ◽  
Lisa Gassaway ◽  
Barbara Miner ◽  
...  
Keyword(s):  
Film Thickness ◽  
Titanium Nitride ◽  
Metal Film ◽  
Optical Constants ◽  
Nitride Film ◽  
Cross Sectional ◽  
X Ray ◽  
Cobalt Film ◽  
Transmission Electron ◽  
Titanium Nitride Film

Cobalt, titanium and titanium nitride film thickness standards were deposited. All metal film thicknesses were obtained from x-ray reflectivity (XRR) measurement using a conventional powder diffractometer. The cobalt film thicknesses were also thicknesses were also determined from cross-sectional transmission electron microscopy (TEM) images and scanning electron microscope energy dispersive x-ray spectroscopy (SEM/EDXS) data using the recently developed MUFILM measurement technique. The cobalt film thicknesses obtained using MUFILM agreed well with the XRR results. The metal film standards were used to obtain calibration curves for an in-fab XRF system. The cobalt and titanium nitride film thickness standards were also used to adjust the optical constants used for an in-fab ellipsometer.

Design, Materials and Processing for the Summer Olympic Torches

2013 ◽  
Vol 706-708 ◽  
pp. 52-55
Author(s):  
Jian Bin Zhang ◽  
Dong Mei Yu ◽  
Xiao Qiang Yin ◽  
Jian Gang Jia
Keyword(s):  
Physical Vapor Deposition ◽  
Materials Science ◽  
High Strength ◽  
Nitride Film ◽  
Science And Engineering ◽  
Low Weight ◽  
Successful Design ◽  
Materials Science And Engineering ◽  
Aluminum Plates ◽  
Titanium Nitride Film

Olympic torches are the fantastic combination of successful design, appropriate materials and optimum processing which are the basic concept concepts in the major of Materials science and engineering. London Olympic torch was designed to be a three-sided pyramidal in shape, reflecting the features of the Olympic host country and the implication of designers. The material of Olympic torch selected aluminum alloys with a lightweight, high-strength, low thermal conductivity and environmentally friendly recycle; if low weight and high strength are key criteria for the torch, perhaps we can look forward to the incorporation of grapheme in the 2016 Olympic Games torch. The processing of Olympic torch involved laser cutting for 8000 holes and physical vapor deposition for gold-colored titanium nitride film on the surface of the aluminum plates, which embodied the best manufacturing route and the host country's technological capabilities.

Precursors for the Chemical Vator Deposition of Titanium Nitride and Titanium Aluminum Nitride Films

1997 ◽  
Vol 495 ◽  
Author(s):  
Charles H. Winter ◽  
Peggy J. McKarns ◽  
Joseph T. Scheper
Keyword(s):  
Aluminum Nitride ◽  
Titanium Nitride ◽  
Ternary Alloys ◽  
Nitride Film ◽  
Film Properties ◽  
Properties And Characterization ◽  
New Process ◽  
Titanium Aluminum ◽  
Titanium Aluminum Nitride ◽  
Titanium Nitride Film

ABSTRACTTitanium nitride and ternary alloys thereof are of significant interest due to their hardness, chemical resistance, and good electrical conductivity. We report the synthesis, structure, and properties of several new precursors to titanium nitride that are based upon hydrazine-derived ligands. Application of these complexes in titanium nitride film depositions is overviewed. Film properties and characterization are presented. We also describe a new process for the preparation of titanium aluminum nitride films, and focus on how the presence of small amounts of aluminum change the properties of the material.

Comparing PVD Titanium Nitride Film Properties and their Effect on Beyond 7 nm EUV Patterning

2020 ◽  
Author(s):  
Scott DeVries ◽  
Ekmini Anuja De Silva ◽  
Donald Canaperi ◽  
Andrew Simon ◽  
Abraham Arceo de la Pena ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Nitride Film ◽  
Film Properties ◽  
Titanium Nitride Film

scholarly journals Optoelectronic Properties of Ultrathin Indium Tin Oxide Films: A First-Principle Study

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 30
Author(s):  
Xiaoyan Liu ◽  
Lei Wang ◽  
Yi Tong
Keyword(s):  
Film Thickness ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Density Functional ◽  
Optoelectronic Properties ◽  
Surface Strain ◽  
Strain Effect ◽  
First Principle ◽  
Electrical Resistivities ◽  
Ito Films

First-principle density functional theory simulations have been performed to predict the electronic structures and optoelectronic properties of ultrathin indium tin oxide (ITO) films, having different thicknesses and temperatures. Our results and analysis led us to predict that the physical properties of ultrathin films of ITO have a direct relation with film thickness rather than temperature. Moreover, we found that a thin film of ITO (1 nm thickness) has a larger absorption coefficient, lower reflectivity, and higher transmittance in the visible light region compared with that of 2 and 3 nm thick ITO films. We suggest that this might be due to the stronger surface strain effect in 1 nm thick ITO film. On the other hand, all three thin films produce similar optical spectra. Finally, excellent agreement was found between the calculated electrical resistivities of the ultrathin film of ITO and that of its experimental data. It is concluded that the electrical resistivities reduce along with the increase in film thickness of ITO because of the short strain length and limited bandgap distributions.

Effect of Film Thickness on Fatigue Strength of TiAl Alloy Coated with TiAlN Film at Elevated Temperature

2005 ◽  
Vol 297-300 ◽  
pp. 1446-1451 ◽  
Author(s):  
Takeshi Kasuya ◽  
Hideto Suzuki
Keyword(s):  
Thin Film ◽  
Fatigue Strength ◽  
Film Thickness ◽  
Thick Film ◽  
Physical Vapor Deposition ◽  
Tial Alloy ◽  
Testing Machine ◽  
Intermetallic Alloy ◽  
Fracture Control ◽  
The Difference

The fatigue strength of TiAl intermetallic alloy coated with TiAlN film was studied in vacuum at 1073K using a SEM-servo testing machine. In addition, three kinds of TiAlN films were given by physical vapor deposition (1, 3, and 10μ m). The fatigue strength of 3μ m was highest. Also, the fatigue strength of 1μ m was lowest. From this result, existence of optimum film thickness was suggested because the difference of fatigue strength arose in each film thickness. The justification for existence of optimum film thickness is competition of 45-degree crack and 90-degree crack. The 45-degree crack is phenomenon seen in the thin film (1μ m), and is caused by plastic deformation of TiAl substrate. The 45-degree crack is the factor of the fatigue strength fall by the side of thin film. In contrast, the 90-degree crack is phenomenon in the thick film (10μ m), and is caused as result of reaction against load to film. The 90-degree crack is the factor of the fatigue strength fall by the side of thick film. In conclusion, the optimum film thickness can perform meso fracture control, and improves fatigue strength.

Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

1991 ◽  
Vol 226 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Sakata ◽  
Shinji Sakata Merl
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Oxide Film ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Silicon Substrate ◽  
Nitride Film ◽  
Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

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