Microstructure and Electrical Properties of Zinc Films on InP

1995 ◽  
Vol 403 ◽  
Author(s):  
E. Kamiinska ◽  
A. Piotrowska ◽  
A. Barcz ◽  
S. Kasjaniuk ◽  
E. Mizera ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Secondary Ion Mass Spectrometry ◽  
Native Oxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched ◽  
Inp Surface

AbstractThe interactions between thin films of Zn and (100)InP were analysed with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition, and to form an ohmic contact when deposited on n-type InP. Under heat treatment Zn protrudes into InP, and beneath Zn/InP interface a tetragonal Zn3P2 phase lattice matched to InP grows.

Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
P. Fons ◽  
S. Niki ◽  
A. Yamada ◽  
A. Okada ◽  
D.J. Tweet
Keyword(s):  
Thin Film ◽  
Secondary Ion Mass Spectrometry ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
State Of Stress ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTA series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

Composition analysis of thin AlxGa1−xAs layers with TEM and SIMS

1990 ◽  
Vol 5 (3) ◽  
pp. 578-586 ◽  
Author(s):  
A. F. de Jong ◽  
K. T. F. Janssen
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Composition Analysis ◽  
X Ray Diffraction ◽  
Bright Field ◽  
X Ray ◽  
Transmission Electron ◽  
Reference Measurements ◽  
Secondary Ion

In this paper two methods for measuring aluminum compositions in very thin (1.5–15 nm), individual AlxGa1–xAs layers are investigated. The transmission electron microscopy (TEM) thickness-fringe method uses the bright-field extinction fringes from a small, cleaved 90° wedge imaged in a [100] orientation. By comparing calculated and experimental extinction fringes, compositions are determined with a sensitivity in x of 0.03, in layers with a thickness of 3.5 nm. With secondary ion mass spectrometry (SIMS), compositions in AlxGa1–xAs layers with a thickness of 15 nm are measured with an accuracy in x between 0.02 and 0.05. Thicker layers (1 μm) with a composition known from x-ray diffraction measurements are used as a reference for both methods. Subsequently, TEM results are compared with SIMS and the reference measurements. The overall agreement is good, but for 0.25 < x < 0.65, the values of x found by TEM are systematically 0.05 too low. Using the SIMS and reference measurements as a calibration, compositions can be determined by TEM with an accuracy between 0.03 (low x) and 0.05 (high x) in layers as thin as 1.5 nm.

Copper(I) Halide Nanoparticle-dispersed Glasses Prepared by Copper Staining

2005 ◽  
Vol 20 (9) ◽  
pp. 2480-2485 ◽  
Author(s):  
Kohei Kadono ◽  
Tatsuya Suetsugu ◽  
Takeshi Ohtani ◽  
Toshihiko Einishi ◽  
Takashi Tarumi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Surface Region ◽  
Borosilicate Glasses ◽  
X Ray Diffraction ◽  
X Ray ◽  
Depth Profiles ◽  
Transmission Electron ◽  
Heat Treated ◽  
Glass Heat

Copper(I) chloride and bromide nanoparticle-dispersed glasses were prepared by means of a conventional copper staining. The staining was performed by the following process: copper stain was applied on the surfaces of Cl−- or Br−-ion-containing borosilicate glasses, and the glasses were heat-treated at 510 °C for various times. Typical exciton bands observed in the absorption spectra of the glasses after the heat treatment indicated that CuCl and CuBr particles were formed in the surface region of the glasses. The average sizes of the CuCl and CuBr particles in the glasses heat-treated for 48 h were estimated at 4.8 and 2.7 nm, respectively. The nanoparticles were also characterized by x-ray diffraction and transmission electron microscopy. Depth profiles of Cu and CuBr concentration in the glass heat-treated for 48 h were measured. Copper decreased in concentration monotonously with depth, reaching up to 60 μm, while the CuBr concentration had a maximum at about 25 μm in depth.

scholarly journals Microstructure and Thermal Stability of Transition Metal Nitrides and Borides on GaN

2000 ◽  
Vol 622 ◽  
Author(s):  
Jacek Jasiński ◽  
Eliana Kamińska ◽  
Anna Piotrowska ◽  
Adam Barcz ◽  
Marcin Zieliński
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Thermal Stability ◽  
Contact Structure ◽  
Secondary Ion Mass Spectrometry ◽  
Metal Nitrides ◽  
Transition Metal Nitrides ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Thermal Stability Of

ABSTRACTMicrostructure and thermal stability of ZrN/ZrB2 bilayer deposited on GaN have been studied using transmission electron microscopy methods (TEM) and secondary ion mass spectrometry (SIMS). It has been demonstrated that annealing of the contact structure at 1100°C in N2 atmosphere does not lead to any observable metal/semiconductor interaction. In contrast, a failure of the integrity of ZrN/ZrB2 metallization at 800°C, when the heat treatment is performed in O2 ambient has been observed.

EFFECT OF NANOCRYSTALLIZATION ANNEALING ON MAGNETIC PROPERTIES AND MAGNETOIMPEDANCE OF CO-BASE RIBBONS

2012 ◽  
Vol 05 ◽  
pp. 841-846
Author(s):  
AMIR KEYVANARA ◽  
REZA GHOLAMIPOUR ◽  
SHAMSEDIN MIRDAMADI ◽  
FARZAD SHAHRI ◽  
HOSSEIN SEPEHRI AMIN
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Magnetic Properties ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Melt Spun ◽  
Melt Spun Ribbons ◽  
Nanocrystalline Phases

Melt spun ribbons of Co 64 Fe 4 Ni 2 B 19 Si 8 Cr 3 alloy have been prepared and the nanocrystallization process was carried out by the heat treatment of the as spun ribbons above the crystallization temperature. Structural studies of the samples have been performed by transmission electron microscopy and X-ray diffraction. Magnetic properties of the samples and magnetoimpedance measurements were investigated and it was revealed that magnetic properties and magnetoimpedance of the samples deteriorate by the formation of nanocrystalline phases.

Cross-Sectional TEM Study Of Phase Separation In Reaction Of Ni-Ta Films With GaAs

1985 ◽  
Vol 54 ◽  
Author(s):  
A. Lahav ◽  
M. Eizenberg ◽  
Y. Komem
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
Phase Separation ◽  
Gaas Substrate ◽  
Auger Spectroscopy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTThe reaction between Ni60Ta40 amorphous alloy and (001) GaAs was studied by cross-sectional transmission electron microscopy, Auger spectroscopy, and x-ray diffraction. At 400°C formation of Ni GaAs at the interface with GaAs was observed. After heat treatment at 600°C in vacuum a layered structure of TaAs/NiGa/GaAs has been formed. The NiGa layer has epitaxial relations to the GaAs substrate. The vertical phase separation can be explained by opposite diffusion directions of nickel and arsenic atoms.

Air-Water Interfacial Film of Zirconia and its Heat-Treatment

2011 ◽  
Vol 295-297 ◽  
pp. 1095-1098
Author(s):  
Chun Kan
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Self Assembly ◽  
Energy Dispersive Spectrum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zirconia Film ◽  
Transmission Electron ◽  
Assembly Structure ◽  
Calcined Temperature

The air-water interfacial zirconia film composed of nanodisks with self-assembly structure is prepared. Scanning electron microscopy (SEM), Energy Dispersive Spectrum (EDS), X-ray diffraction (XRD) and Transmission electron microscopy (TEM) are used to characterize the film. Furthermore, the heat-treatment of this film is studied by thermogravimetry and differential thermal analysis (TG-DTA), XRD, and Raman spectroscopy (Raman). The results suggest that the zirconia of the samples changes from amorphous phase to t-ZrO2phase then m-ZrO2phase with the rise of calcined temperature.

Ni/Si-Based Contacts to GaN: Thermally Activated Structural Transformations Leading to Ohmic Behavior

1998 ◽  
Vol 537 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
J. Jasinski ◽  
J. Kozubowski ◽  
A. Barcz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Secondary Ion Mass Spectrometry ◽  
Structural Transformations ◽  
Thermally Activated ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Dopant Atoms ◽  
Ohmic Contact Formation ◽  
Secondary Ion

AbstractStructural transformations in Ni/Si-based contacts to GaN occurring under heat treatment have been studied using transmission electron microscopy and secondary ion mass spectrometry. Transition from non-ohmic to ohmic behavior correlates with reaction between Ni and Si, and decomposition of the initially formed interfacial Ni:Ga:N layer. Transport of dopant atoms from metallization into GaN testifies in favour of the SPR process of ohmic contact formation

Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure

2021 ◽  
Author(s):  
Wen-Hsin Chang ◽  
Hsien-Wen Wan ◽  
Yi-Ting Cheng ◽  
Yen-Hsun Glen Lin ◽  
Toshifumi IRISAWA ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
X Ray Diffraction ◽  
Thermal Budget ◽  
X Ray ◽  
Transmission Electron ◽  
Lift Off ◽  
Low Thermal Budget ◽  
3D Applications ◽  
Secondary Ion

Abstract Germanium-on-Insulator (GeOI) structures with the surface orientation of (111) have been successfully fabricated by using low thermal budget epitaxial-lift-off (ELO) technology via direct bonding and selective etching. The material characteristics and transport properties of the Ge(111)OI structure have been systematically investigated through secondary-ion mass spectrometry, Raman spectroscopy, X-ray diffraction, high-resolution transmission electron microscope, and Hall measurement. The transferred Ge (111) layer remained almost intact from the as-grown epitaxial layers, indicating the benefits of ELO technology. The low thermal budget ELO technology demonstrated in this work is promising to integrate Ge channels with different surface orientations on Si (100) substrates for future monolithic 3D applications.

Sign in / Sign up

Export Citation Format

Share Document