Growth and Texture of Polycrystalline Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
Richard W. Smith ◽  
Feng Ying ◽  
David J. Srolovitz

AbstractTwo dimensional non-equilibrium molecular dynamics simulations are performed to study microstructural evolution during the growth of polycrystalline thin films. Attention is focused on the interaction between grain boundaries and voids which form during deposition, and on the development of a preferred, crystallographic texture during film growth. In an intermediate temperature regime, where the film is cold enough to allow void formation but hot enough to allow grain boundary motion, boundaries move such as to attach themselves to voids as the voids form from depressions in the film surface. At lower temperatures, the boundaries have insufficient mobility to migrate toward the voids. At higher temperatures, films grow in the absence of voids. At low deposition kinetic energies, there is no tendency for polycrystalline films to develop a preferred texture. At moderate or high energy deposition kinetic energies, however, as in the case of magnetron sputtering, significant texture formation can result due to preferential (re)sputtering of atoms from the surface of grains with low-binding-energy exposed surfaces. Such preferential (re)sputtering provides a height advantage for grains possessing high-binding-energy exposed surfaces. The taller grains are seen to widen as deposition continues, resulting in the development of a preferred crystallographic orientation.

1995 ◽  
Vol 399 ◽  
Author(s):  
Richard W. Smith ◽  
David J. Srolovitz

ABSTRACTTwo dimensional, non-equilibrium molecular dynamics simulations have been performed to examine the microstructures of both homoepitaxial and heteroepitaxial thin films grown on single crystal substrates. The principal microstructural features to develop within these films are small voids and edge dislocations. Voids form near the surface of the growing film as surface depressions between microcolumns pinch off to become closed volumes. These voids often form in such a way as to introduce dislocations into the crystal with their cores positioned within the voids. Dislocations are also formed during heteroepitaxy at the interface between the substrate and film. These dislocations tend to be mobile. When voids are present in the film and when the lattice misfit is low, dislocations tend to be trapped in the voids or pulled toward them due to dislocation image interactions. Once attached to voids, dislocations are effectively pinned there. When voids are absent or when the misfit is high, dislocations are restricted to the film-substrate interface. In the case of heteroepitaxy, dislocations are found to relieve either tensile or compressive misfit stresses. Misfit stresses may also be accommodated, to some extent, merely by the free volume of the voids themselves.


Energies ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 688 ◽  
Author(s):  
Donghyeok Shin ◽  
SangWoon Lee ◽  
Dong Ryeol Kim ◽  
Joo Hyung Park ◽  
Yangdo Kim ◽  
...  

Copper sulfide (CuS) thin films were deposited on a glass substrate at room temperature using the radio-frequency (RF) magnetron-sputtering method at RF powers in the range of 40–100 W, and the structural and optical properties of the CuS thin film were investigated. The CuS thin films fabricated at varying deposition powers all exhibited hexagonal crystalline structures and preferred growth orientation of the (110) plane. Raman spectra revealed a primary sharp and intense peak at the 474 cm−1 frequency, and a relatively wide peak was found at 265 cm−1 frequency. In the CuS thin film deposited at an RF power of 40 W, relatively small dense particles with small void spacing formed a smooth thin-film surface. As the power increased, it was observed that grain size and grain-boundary spacing increased in order. The binding energy peaks of Cu 2p3/2 and Cu 2p1/2 were observed at 932.1 and 952.0 eV, respectively. Regardless of deposition power, the difference in the Cu2+ state binding energies for all the CuS thin films was equivalent at 19.9 eV. We observed the binding energy peaks of S 2p3/2 and S 2p1/2 corresponding to the S2− state at 162.2 and 163.2 eV, respectively. The transmittance and band-gap energy in the visible spectral range showed decreasing trends as deposition power increased. For the CuS/tin sulfide (SnS) absorber-layer-based solar cell (glass/Mo/absorber(CuS/SnS)/cadmium sulfide (CdS)/intrinsic zinc oxide (i-ZnO)/indium tin oxide (ITO)/aluminum (Al)) with a stacked structure of SnS thin films on top of the CuS layer deposited at 100 W RF power, an open-circuit voltage (Voc) of 115 mA, short circuit current density (Jsc) of 9.81 mA/cm2, fill factor (FF) of 35%, and highest power conversion efficiency (PCE) of 0.39% were recorded.


Author(s):  
M. Grant Norton ◽  
Rand R. Biggers ◽  
Iman Maartense ◽  
E. K. Moser ◽  
Jeff L. Brown

Electron and scanning probe microscopies are used to examine the microstructure and surface topography of YBa2Cu3O7 (YBCO) thin films formed by pulsed-laser deposition (PLD). A major emphasis of this work has been the correlation of the observed microstructural features and the deposition parameters.The formation of microscopic features on the surface of thin films deposited by PLD seems to be an undesirable and almost unavoidable feature of this process. One such feature is often associated with microstructural changes produced in the target during laser irradiation. These are apparently spherical particles with diameters ranging from 0.1 to 10μm. These particles are produced by melting of the target and the subsequent solidification of the molten ejecta. Particles may also be produced as a result of changes in the surface morphology of the target during laser irradiation. However, notall surface features observed on the films deposited by PLD are due to ejecta from the target. Figure 1 shows an atomic force microscope (AFM) image of a YBCO film grown on a (100)-oriented LaAlO3 substrate. Usually films grown with our typical deposition conditions on (100)-oriented LaAlO3 substrates arepredominantly c-axis oriented. The film is approximately 150 nm thick. Different types of outgrowth are visible on the film surface.


2008 ◽  
Vol 1150 ◽  
Author(s):  
James M.E. Harper

AbstractSeveral methods to induce grain alignment in polycrystalline thin films are discussed, in which directional effects can dominate over the normal evolution of fiber texture during thin film growth. Early experiments with ion beam assisted deposition showed the importance of channeling directions in selecting grain orientations with low sputtering yield or low ion damage energy density. Examples of this approach include the formation of biaxial fiber textures in Nb, Al and AlN. Grain orientations may also be selected by the release of stored energy during abnormal grain growth initiated by solute precipitation (Cu-Co) or phase transformation (TiSi2). Other energy sources such as mechanical deformation, crystallization or compound formation may also contribute to producing desired grain alignments. In multicomponent thin films, combinations of these mechanisms provide opportunities for more specific control of grain orientations.


1997 ◽  
Vol 11 (21n22) ◽  
pp. 981-987
Author(s):  
H. Q. Yin ◽  
T. Arakawa ◽  
Y. Kaneda ◽  
T. Yoshikawa ◽  
N. Haneji ◽  
...  

La 2-x Sr x CuO 4 ultra-thin films with thickness 200 Å were fabricated by pulsed laser deposition method in oxygen ( O 2) atmosphere. The morphology of deposited films was investigated by reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM) and scanning electronic microscopy (SEM). The strong oxygen ambient pressure dependence of film morphology was observed. In high oxygen ambient pressure, the film growth is dominated by island growth mode. The results imply that the experimental conditions of oxygen ambient pressure and substrate temperature are critical for the layer-by-layer growth mode.


2014 ◽  
Vol 70 (a1) ◽  
pp. C724-C724
Author(s):  
Christoph Genzel

The most important advantage of energy dispersive (ED) diffraction compared with angle dispersive methods is that the former provides complete diffraction patterns in fixed but arbitrarily selectable scattering directions. Furthermore, in experiments that are carried out in reflection geometry, the different photon energies E(hkl) of the diffraction lines in an ED diffraction pattern can be taken as an additional parameter to analyze depth gradients of structural properties in the materials near surface region. For data evaluation advantageous use can be made of whole pattern methods such as the Rietveld method, which allows for line profile analysis to study size and strain broadening [1] or for the refinement of models that describe the residual stress depth distribution [2]. Concerning polycrystalline thin films, the features of ED diffraction mentioned above can be applied to study residual stresses, texture and the microstructure either in ex-situ experiments or in-situ to monitor, for example, the chemical reaction pathway during film growth [3]. The main objective of this talk is to demonstrate that (contrary to a widespread opinion) high energy synchrotron radiation and thin film analysis may fit together. The corresponding experiments were performed on the materials science beamline EDDI at BESSY II which is one of the very few instruments worldwide that is especially dedicated to ED diffraction. On the basis of selected examples it will be shown that specially tailored experimental setups allow for residual stress depth profiling even in thin films and multilayer coatings as well as for fast in situ studies of film stress and microstructure evolution during film growth.


Author(s):  
S. Nakahara

A recent transmission-electron-microscope (TEM) study has shown, using the defocus contrast technique, that thin evaporated gold films contain a high density of small voids.In this communication, we report a TEM study on the structure and distribution of voids in thin films prepared by evaporation, sputtering, and electrodeposition and discuss a possible mechanism, by which voids are generated during film growth.In evaporation, sputtering, and electrodeposition processes, the entrapment of gaseous and/or organic impurities at growing film surface cannot be avoided due to their relatively unclean environment. Such impurity entrapment could take place conveniently at surface irregularities such as growth steps, grain boundaries and valleys between aggregates of crystallites. The incorporation of trapped impurities, therefore, results in the formation of voids at the above three sites. It can be easily seen that the spacial distribution of voids generated at grain boundaries should closely follow the grain structure of thin films.


2007 ◽  
Vol 1012 ◽  
Author(s):  
Lucian Ion ◽  
Vlad Andrei Antohe ◽  
Marian Ghenescu ◽  
Oana Ghenescu ◽  
Rosemary Bazavan ◽  
...  

AbstractThe effects of irradiation with high-energy protons (3 MeV, up to a fluency of 1013 protons/cm2), on structural, electrical and optical properties of polycrystalline CdS and CdTe thin films have been investigated. XRD investigation has revealed that the films contain wurtzite-type CdS, (001) preferentially oriented in the growth direction, and cubic phase CdTe, respectively. The defects induced by ionizing radiations have been studied by thermally stimulated currents spectroscopy (TSC). Parameters of identified defect levels were determined and their possible origin is discussed.


MRS Bulletin ◽  
1995 ◽  
Vol 20 (5) ◽  
pp. 32-38 ◽  
Author(s):  
Ivan Bozovic ◽  
J.N. Eckstein

The majority of sophisticated ultra-high-vacuum (UHV) systems for deposition of thin films, such as molecular beam epitaxy (MBE) machines, contain some kind of electron diffraction apparatus which is used to scrutinize the surface structure of the film while it is grown. Reflection high energy electron diffraction (RHEED) is probably the most frequently employed configuration. An excellent introduction to RHEED, including a treatment of electron diffraction, reciprocal-space description, reflection from imperfect surfaces, etc., was recently published in the MRS Bulletin by Lagally and Savage. Hence, we will not review these basics here. Rather, we will assume the reader to be familiar with that article, and will refer to it as LS.The materials discussed in LS include Si, Ge on Si, and GaAs. The applications of MBE for synthesis of semiconductor thin films and heterostructures are widely recognized. MRS has recently bestowed its greatest honor, the Von Hippel Award, to Alfred Y. Cho for his pioneering work on MBE synthesis of GaAs and its application to new devices.In contrast, here we focus on complex oxides—cuprates, titanates, manganates, etc. This is a relatively new area of application for both MBE and RHEED. Actually, it was only after the discovery of high-temperature superconductivity (HTS) that many MBE systems were designed and built specifically for metallic oxide deposition. More recently, some of these machines have also been employed to synthesize other interesting oxides, for example, ferroelectrics and ferromagnets. In all these studies, RHEED has been the principal diagnostic tool and source of information about the growing film surface.


1990 ◽  
Vol 202 ◽  
Author(s):  
Thomas Nolan ◽  
Robert Beyers ◽  
Robert Sinclair

ABSTRACTAn equilibrium model for agglomeration based upon the mechanism of grain boundary grooving in polycrystalline thin films is suggested. It involves an energy balance between surface, interface, and grain boundary energies, and predicts parameters which will influence the onset of agglomeration. It has been determined that small grain size, low grain boundary energy, high film surface and interface energies, and growth of single crystal epitaxial layers should promote resistance to agglomeration. Polycrystalline TiSi2 thin films deposited on Si substrates have been observed using cross-section TEM. The micrographs provide evidence that, for these films, the grain boundary grooving mechanism is dominant and most of the modeling assumptions are valid.


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