Growth of Polycrystalline Silicon Films at Low Temperature by Plasma Enhanced Chemical Vapor Deposition

1995 ◽  
Vol 403 ◽  
Author(s):  
Y. Hatanaka ◽  
A. H. Jayatissa ◽  
K. Ishikawa ◽  
Y. Nakanishi
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Liquid Crystal Display ◽  
Chemical Vapor ◽  
High Deposition Rate ◽  
Large Area ◽  
Wide Range ◽  
Si Films

AbstractPolycrystalline silicon (poly-Si) films are of great interest in the field of TFT fabrication for active matrix liquid crystal display(AM-LCD) applications. Low temperature depositions below 500 °C are necessary for using a glass substrate for the application to large area devices such as display devices. We investigated poly-Si growth at low temperature by plasma enhanced chemical vapor deposition (PECVD). Cathode deposition is used in which substrates are mounted on the powered electrode and a mesh electrode is attached on the cathode for protecting the growing surface from ion impacts. It is found that poly-Si films can be deposited in the wide range of SiH4 concentration even at 100%, and a high deposition rate of 35nm/min has been realized. This investigation gives highly promising results for poly-Si growth technology at low temperature.

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth

Low-Temperature Chemical Vapor Deposition Growth of Graphene Layers on Copper Substrate Using Camphor Precursor

2020 ◽  
Vol 20 (12) ◽  
pp. 7698-7704
Author(s):  
K. Kavitha ◽  
Akanksha R. Urade ◽  
Gurjinder Kaur ◽  
Indranil Lahiri
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposition Growth ◽  
Graphene Layers ◽  
Grown Graphene

A two-step, low-temperature thermal chemical vapor deposition (CVD) process, which uses camphor for synthesizing continuous graphene layer on Cu substrate is reported. The growth process was performed at lower temperature (800 °C) using camphor as the source of carbon. A threezone CVD system was used for controlled heating of precursor, in order to obtain uniform graphene layer. As-grown samples were characterized by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). The results show the presence of 4–5 layers of graphene. As-grown graphene transferred onto a glass substrate through a polymer-free wet-etching process, demonstrated transmittance ~91% in visible spectra. This process of synthesizing large area, 4–5 layer graphene at reduced temperature represents an energy-efficient method of producing graphene for possible applications in opto-electronic industry.

scholarly journals P-doped polycrystalline silicon films obtained at low temperature by hot-wire chemical vapor deposition

1995 ◽  
Vol 86 (1-4) ◽  
pp. 600-603 ◽  
Author(s):  
J. Puigdollers ◽  
J. Cifre ◽  
M.C. Polo ◽  
J.M. Asensi ◽  
J. Bertomeu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Hot Wire ◽  
Polycrystalline Silicon Films
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