0.6nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO2 and Si substrate
2007 ◽
Vol 84
(9-10)
◽
pp. 1861-1864
◽
Keyword(s):
Keyword(s):
1983 ◽
Vol 243
(1)
◽
pp. 123-129
◽
2016 ◽
Vol 697
◽
pp. 510-514
◽
2000 ◽
Vol 147
(1)
◽
pp. 373
◽
2015 ◽
Vol 40
(3)
◽
pp. 203-205
1980 ◽
Vol 18
(3)
◽
pp. 469-476
◽