High Temperature Superconducting Step-Edge SNS Josephson Junctions on Silicon Substrates

1995 ◽  
Vol 401 ◽  
Author(s):  
P. A. Rosenthal ◽  
J. E. Cosgrove ◽  
D. B. Fenner ◽  
L. R. Vale ◽  
R. H. Ono ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Critical Currents ◽  
Yttria Stabilized Zirconia ◽  
Step Edge ◽  
Silicon Substrates ◽  
Ion Milling ◽  
Stabilized Zirconia ◽  
Shapiro Steps ◽  
Current Voltage ◽  
Current Voltage Characteristics

AbstractWe have fabricated and tested YBCO step-edge SNS Josephson junctions on silicon substrates. The silicon step edges were patterned photolithographically and reactively ion etched using an SF6 plasma. The structures were fabricated through sequential angled pulsed laser deposition of yttria stabilized zirconia, YBCO, and gold layers, followed by photolithographic patterning and ion milling. The completed devices showed resistively shunted junction (RSJ)-like current voltage characteristics and microwave induced Shapiro steps. Critical currents as large as 84 PA and resistances of order 0.5 Ω were obtained. Measurable critical currents were observed up to 76 K. We report on the fabrication and properties of these junctions.

EFFECT OF THERMAL NOISE ON THE CURRENT-VOLTAGE CHARACTERISTICS OF JOSEPHSON JUNCTIONS

1996 ◽  
Vol 10 (22) ◽  
pp. 1095-1102 ◽  
Author(s):  
A.K. CHATTAH ◽  
C.B. BRIOZZO ◽  
O. OSENDA ◽  
M.O. CÁCERES
Keyword(s):  
Josephson Junctions ◽  
Thermal Noise ◽  
Planck Equation ◽  
Resonance Problem ◽  
Shapiro Steps ◽  
Periodic Distribution ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Path Integral Method ◽  
Asymptotic Time

We analyze the influence of thermal noise on the Shapiro steps appearing in the current-voltage characteristics of Josephson junctions. We solve the Fokker-Planck equation describing the system by a path integral method in the steepest-descent approximation, previously applied to the stochastic resonance problem. We obtain the Asymptotic Time-Periodic Distribution Pas(ϕ, t), where ϕ∈[0, 2π] and compute from it the voltage [Formula: see text], constructing the I-V characteristics. We find a defined “softening” of the Shapiro steps as temperature increases, for values of the system parameters in the experimentally accessible range.

scholarly journals Current-Voltage Characteristics of Platinum Model Electrodes on Yttria-Stabilized Zirconia

2012 ◽  
Vol 159 (5) ◽  
pp. B502-B513 ◽  
Author(s):  
Alexander K. Opitz ◽  
Michael P. Hörlein ◽  
Tobias Huber ◽  
Jürgen Fleig
Keyword(s):  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Current Voltage ◽  
Current Voltage Characteristics

Correlation of current-voltage characteristics of step-edge YBa2Cu3O7 Josephson junctions with the step angle

1994 ◽  
Author(s):  
K. Herrmann ◽  
Michael Siegel ◽  
Gerhard Kunkel ◽  
A. Thust ◽  
B. Kabius ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Step Edge ◽  
Current Voltage ◽  
Current Voltage Characteristics

Current-voltage characteristics of interacting Josephson junctions

1980 ◽  
Author(s):  
A. K. Jain ◽  
J. E. Lukens ◽  
Kin Li ◽  
R. D. Sandell ◽  
C. Varmazis
Keyword(s):  
Josephson Junctions ◽  
Current Voltage ◽  
Current Voltage Characteristics

The microstructure of continuously processed Yba2Cu3Oy coated conductors with underlying CeO2 and ion-beam-assisted yttria-stabilized zirconia buffer layers

2000 ◽  
Vol 15 (5) ◽  
pp. 1110-1119 ◽  
Author(s):  
T. G. Holesinger ◽  
S. R. Foltyn ◽  
P. N. Arendt ◽  
H. Kung ◽  
Q. X. Jia ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Ion Beam ◽  
Misfit Strain ◽  
Critical Currents ◽  
Coated Conductors ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Inconel 625 ◽  
Microstructural Development ◽  
Stabilized Zirconia

The microstructural development of YBa2Cu3Oy (Y-123) coated conductors based on the ion-beam-assisted deposition (IBAD) of yttria-stabilized zirconia (YSZ) to produce a biaxially textured template is presented. The architecture of the conductors was Y-123/CeO2/IBAD YSZ/Inconel 625. A continuous and passivating Cr2O3 layer forms between the YSZ layer and the Inconel substrate. CeO2 and Y-123 are closely lattice-matched, and misfit strain is accommodated at the YSZ/CeO2 interface. Localized reactions between the Y-123 film and the CeO2 buffer layer result in the formation of BaCeO3, YCuO2, and CuO. The positive volume change that occurs from the interfacial reaction may act as a kinetic barrier that limits the extent of the reaction. Excess copper and yttrium generated by the interfacial reaction appear to diffuse along grain boundaries and intercalate into Y-123 grains as single layers of the Y-247, Y-248, or Y-224 phases. The interfacial reactions do not preclude the attainment of high critical currents (Ic) and current densities (Jc) in these films nor do they affect to any appreciable extent the nucleation and alignment of the Y-123 film.

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